CoolMOS™ C3 Series, Single FETs, MOSFETs

Results:
2
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Rds On (Max) @ Id, Vgs
Supplier Device Package
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Current - Continuous Drain (Id) @ 25°C
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining2
Applied Filters:
CoolMOS™ C3
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseGradeSupplier Device PackageTechnologyFET FeatureVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
SPB20N60C3ATMA1
MOSFET N-CH 600V 20.7A TO263-3
1+
$4.5634
5+
$4.3099
10+
$4.0563
Quantity
647 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
PG-TO263-3-2
MOSFET (Metal Oxide)
-
3.9V @ 1mA
CoolMOS™ C3
600 V
20.7A (Tc)
10V
190mOhm @ 13.1A, 10V
114 nC @ 10 V
±20V
2400 pF @ 25 V
208W (Tc)
-
SPW55N80C3FKSA1
MOSFET N-CH 800V 54.9A TO247-3
1+
$96.3380
5+
$90.9859
10+
$85.6338
Quantity
6 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
PG-TO247-3
MOSFET (Metal Oxide)
-
3.9V @ 3.3mA
CoolMOS™ C3
800 V
54.9A (Tc)
10V
85mOhm @ 32.6A, 10V
288 nC @ 10 V
±20V
7520 pF @ 100 V
500W (Tc)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.