Name: TK2R4A08QM,S4X
Brand: Toshiba Semiconductor and Storage
SKU: 10509017-TK2R4A08QM,S4X
Availability: InStock

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Attributes

Technical Documents

TYPE	DESCRIPTION
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSX-H
Package / Case	TO-220-3 Full Pack
Mounting Type	Through Hole
Operating Temperature	175°C
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Rds On (Max) @ Id, Vgs	2.44mOhm @ 50A, 10V
Power Dissipation (Max)	47W (Tc)
Vgs(th) (Max) @ Id	3.5V @ 2.2mA
Supplier Device Package	TO-220SIS
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	80 V
Gate Charge (Qg) (Max) @ Vgs	179 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	13000 pF @ 40 V

Datasheet

TK2R4A08QM,S4X Datasheet (PDF)

Product Overview

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TK2R4A08QM,S4X - From Manufacturer: Toshiba Semiconductor and Storage, it is an UMOS10 TO-220SIS 80V 2.4MOHM, part of Discrete Semiconductor Products, Transistors, FETs, MOSFETs, Single FETs, MOSFETs. TK2R4A08QM,S4X stock status: need to confirm with us, contact us! Quick Reply.

Toshiba's 80 V MOSFETs Reduce Conduction Loss in Switching Supplies and Motor Control Equipment

Toshiba's MOSFETs with UMOS-X trench structure offer low RDS(ON) and conduction loss, reducing power consumption. These 80 V MOSFETs have low gate switch charge and a low figure of merit.

Toshiba Electronic Devices and Storage Corporation Product Highlights

Publish Date: 12 Feb, 2024

Author: Origin Data Team

Updated: 15 Jun, 2024

Toshiba Electronic Devices and Storage Corporation

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TK2R4A08QM,S4X

Manufacturer:
Toshiba Semiconductor and Storage

Description:

UMOS10 TO-220SIS 80V 2.4MOHM

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Toshiba's 80 V MOSFETs Reduce Conduction Loss in Switching Supplies and Motor Control Equipment

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