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Manufacturer:
IXYSDescription:
MOSFET N-CH 1000V 3A TO263HV
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TYPE | DESCRIPTION |
---|---|
Manufacturer | IXYS |
Series | Depletion |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 150°C (TJ) |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 3A (Tj) |
Rds On (Max) @ Id, Vgs | 6Ohm @ 1.5A, 0V |
FET Feature | Depletion Mode |
Power Dissipation (Max) | 125W (Tc) |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Supplier Device Package | TO-263HV |
Drive Voltage (Max Rds On, Min Rds On) | 0V |
Vgs (Max) | ±20V |
Drain to Source Voltage (Vdss) | 1000 V |
Gate Charge (Qg) (Max) @ Vgs | 37.5 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 25 V |
IXTA3N100D2HV - From Manufacturer: IXYS, it is an MOSFET N-CH 1000V 3A TO263HV, part of Discrete Semiconductor Products, Transistors, FETs, MOSFETs, Single FETs, MOSFETs. IXTA3N100D2HV stock status: In stock; order now! Ships immediately.