Manufacturer:
Infineon TechnologiesDescription:
N-CHANNEL POWER MOSFET
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TYPE | DESCRIPTION |
---|---|
Manufacturer | Infineon Technologies |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 175°C (TJ) |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Rds On (Max) @ Id, Vgs | 4.7mOhm @ 100A, 10V |
Power Dissipation (Max) | 300W (Tc) |
Vgs(th) (Max) @ Id | 2V @ 270µA |
Supplier Device Package | PG-TO-263-3-2 |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs (Max) | ±20V |
Drain to Source Voltage (Vdss) | 60 V |
Gate Charge (Qg) (Max) @ Vgs | 225 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 7600 pF @ 30 V |
IPB048N06LG - From Manufacturer: Infineon Technologies, it is an N-CHANNEL POWER MOSFET, part of Discrete Semiconductor Products, Transistors, FETs, MOSFETs, Single FETs, MOSFETs. IPB048N06LG stock status: In stock; order now! Ships immediately.