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Manufacturer:
Goford SemiconductorDescription:
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
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TYPE | DESCRIPTION |
---|---|
Manufacturer | Goford Semiconductor |
Series | SGT |
Package / Case | TO-220-3 |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 150°C (TJ) |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
Rds On (Max) @ Id, Vgs | 10mOhm @ 35A, 10V |
FET Feature | Standard |
Power Dissipation (Max) | 100W (Tc) |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Supplier Device Package | TO-220 |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs (Max) | ±20V |
GT100N12T - From Manufacturer: Goford Semiconductor, it is an N120V,RD(MAX)<10M@10V,VTH2.5V~3., part of Discrete Semiconductor Products, Transistors, FETs, MOSFETs, Single FETs, MOSFETs. GT100N12T stock status: need to confirm with us, contact us! Quick Reply.