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Manufacturer:
EPCDescription:
TRANSISTOR GAN 40V .001OHM
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TYPE | DESCRIPTION |
---|---|
Manufacturer | EPC |
Series | eGaN® |
Package / Case | Die |
Mounting Type | Surface Mount |
Operating Temperature | -40°C ~ 150°C (TJ) |
Technology | GaNFET (Gallium Nitride) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 90A (Ta) |
Rds On (Max) @ Id, Vgs | 1.1mOhm @ 50A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 28mA |
Supplier Device Package | Die |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Vgs (Max) | +6V, -4V |
Drain to Source Voltage (Vdss) | 40 V |
Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds | 4523 pF @ 20 V |
EPC2066 - From Manufacturer: EPC, it is an TRANSISTOR GAN 40V .001OHM, part of Discrete Semiconductor Products, Transistors, FETs, MOSFETs, Single FETs, MOSFETs. EPC2066 stock status: need to confirm with us, contact us! Quick Reply.
EPC’s EPC2066 GaN FET introduces a paradigm shift in power density with its high-frequency operation, high efficiency, and ultra-small footprint, catering to space-constrained applications.
EPC's EPC9174KIT 1.2 kW 1/8th brick reference design board utilizes GaN technology to achieve a high power density of 1472 W/in3, operating at 1 MHz switching frequency and offering a 40 VIN to 60 VIN, 10 V to 15 V, and 100 A output.
EPC's EPC2066 is a high-performance GaN FET with a small footprint, offering high-frequency operation and efficiency for power-dense applications like servers and motor drives.