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Manufacturer:
Infineon TechnologiesDescription:
INSULATED GATE BIPOLAR TRANSISTO
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Attributes
Technical Documents
| TYPE | DESCRIPTION |
|---|---|
| Manufacturer | Infineon Technologies |
| Series | Trenchstop™ 5 |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 62 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 40A |
| Supplier Device Package | PG-TO220-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 22ns/165ns |
| Switching Energy | 390µJ (on), 120µJ (off) |
| Test Condition | 400V, 20A, 15Ohm, 15V |
| Gate Charge | 95 nC |
| Current - Collector (Ic) (Max) | 74 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 250 W |
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IKP40N65H5 - From Manufacturer: Infineon Technologies, it is an INSULATED GATE BIPOLAR TRANSISTO, part of Discrete Semiconductor Products, Transistors, IGBTs, Single IGBTs. IKP40N65H5 stock status: need to confirm with us, contact us! Quick Reply.
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