AlphaIGBT™ Series, Single IGBTs

Results:
20
Manufacturer
Series
Power - Max
Switching Energy
Td (on/off) @ 25°C
Vce(on) (Max) @ Vge, Ic
Current - Collector Pulsed (Icm)
Gate Charge
Test Condition
Current - Collector (Ic) (Max)
Reverse Recovery Time (trr)
Supplier Device Package
Package / Case
Voltage - Collector Emitter Breakdown (Max)
Operating Temperature
Mounting Type
Input Type
Grade
Qualification
IGBT Type
Results remaining20
Applied Filters:
AlphaIGBT™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseIGBT TypeGradeCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Power - MaxReverse Recovery Time (trr)Supplier Device PackageSeriesCurrent - Collector Pulsed (Icm)Vce(on) (Max) @ Vge, IcSwitching EnergyInput TypeGate ChargeTd (on/off) @ 25°CTest ConditionQualification
AOD5B65MQ1E
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
-
-
10 A
650 V
52 W
74 ns
TO-252 (DPAK)
AlphaIGBT™
15 A
2.7V @ 15V, 5A
90µJ (on), 60µJ (off)
Standard
8.8 nC
7ns/78ns
400V, 5A, 60Ohm, 15V
-
AOK50B65GL1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-247-3
-
-
100 A
650 V
312 W
-
TO-247
AlphaIGBT™
300 A
2V @ 15V, 50A
3.37mJ (on), 1.59mJ (off)
Standard
120 nC
282ns/915ns
300V, 50A, 100Ohm, 15V
-
AOT10B65MQ2
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-220-3
-
-
20 A
650 V
150 W
106 ns
TO-220
AlphaIGBT™
30 A
2V @ 15V, 10A
180µJ (on), 130µJ (off)
Standard
24 nC
12ns/91ns
400V, 10A, 30Ohm, 15V
-
AOD6B65MQ1E
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
-
-
12 A
650 V
96 W
81 ns
TO-252 (DPAK)
AlphaIGBT™
18 A
2.4V @ 15V, 6A
110µJ (on), 80µJ (off)
Standard
13.5 nC
9ns/91ns
400V, 6A, 50Ohm, 15V
-
AOD8B65MQ1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
-
-
16 A
650 V
89 W
94 ns
TO-252 (DPAK)
AlphaIGBT™
24 A
2.25V @ 15V, 8A
160µJ (on), 110µJ (off)
Standard
22 nC
8.5ns/102ns
400V, 8A, 37.5Ohm, 15V
-
AOTF5B65M2
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3 Full Pack
-
-
10 A
650 V
25 W
-
TO-220F
AlphaIGBT™
15 A
1.98V @ 15V, 5A
80µJ (on), 70µJ (off)
Standard
14 nC
8.5ns/106ns
400V, 5A, 60Ohm, 15V
-
AOTF8B65MQ1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3 Full Pack
-
-
16 A
650 V
30 W
94 ns
TO-220F
AlphaIGBT™
24 A
2.25V @ 15V, 8A
160µJ (on), 110µJ (off)
Standard
22 nC
8.5ns/102ns
400V, 8A, 37.5Ohm, 15V
-
AOT10B60M1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-220-3
-
-
20 A
600 V
83 W
-
TO-220
AlphaIGBT™
25 A
2.9V @ 15V, 10A
190µJ (on), 140µJ (off)
Standard
14 nC
5.5ns/61ns
400V, 10A, 30Ohm, 15V
-
AOTF10B65MQ2
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3 Full Pack
-
-
20 A
650 V
30 W
100 ns
TO-220F
AlphaIGBT™
30 A
2V @ 15V, 10A
180µJ (on), 130µJ (off)
Standard
24 nC
12ns/91ns
400V, 10A, 30Ohm, 15V
-
AOK40B120P1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-247-3
-
-
80 A
1200 V
600 W
-
TO-247
AlphaIGBT™
160 A
2.3V @ 15V, 40A
2.5mJ (on), 1.3mJ (off)
Standard
202 nC
53ns/210ns
600V, 40A, 7.5Ohm, 15V
-
AOT15B65MQ1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-220-3
-
-
30 A
650 V
214 W
106 ns
TO-220
AlphaIGBT™
45 A
2.15V @ 15V, 15A
290µJ (on), 200µJ (off)
Standard
32 nC
15ns/94ns
400V, 15A, 20Ohm, 15V
-
AOB30B65LN2V
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
-
60 A
650 V
227 W
312 ns
TO-263 (D2Pak)
AlphaIGBT™
90 A
2.35V @ 15V, 30A
880µJ (on), 350µJ (off)
Standard
52 nC
23ns/109ns
400V, 30A, 10Ohm, 15V
-
AOB15B65MQ1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
-
30 A
650 V
214 W
106 ns
TO-263 (D2Pak)
AlphaIGBT™
45 A
2.15V @ 15V, 15A
290µJ (on), 200µJ (off)
Standard
32 nC
15ns/94ns
400V, 15A, 20Ohm, 15V
-
AOK40B65HQ3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-247-3
-
-
80 A
650 V
312 W
106 ns
TO-247
AlphaIGBT™
120 A
2.6V @ 15V, 40A
1.19mJ (on), 380µJ (off)
Standard
61 nC
31ns/110ns
400V, 40A, 7.5Ohm, 15V
-
AOKS40B65H2AL
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
-
-
80 A
650 V
260 W
-
TO-247
AlphaIGBT™
120 A
2.6V @ 15V, 40A
1.17mJ (on), 540µJ (off)
Standard
61 nC
30ns/117ns
400V, 40A, 7.5Ohm, 15V
-
AOGF60B65H2AL
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-3P-3 Full Pack
-
-
120 A
650 V
74 W
318 ns
TO-3PF
AlphaIGBT™
180 A
2.5V @ 15V, 60A
2.36mJ (on), 1.17mJ (off)
Standard
84 nC
35ns/168ns
400V, 60A, 5Ohm, 15V
-
AOK40B65HQ2
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-247-3
-
-
80 A
650 V
312 W
-
TO-247
AlphaIGBT™
120 A
2.6V @ 15V, 40A
1.19mJ (on), 380µJ (off)
Standard
61 nC
31ns/110ns
400V, 40A, 7.5Ohm, 15V
-
AOK40B65HQ1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-247-3
-
-
80 A
650 V
312 W
-
TO-247
AlphaIGBT™
120 A
2.6V @ 15V, 40A
1.19mJ (on), 380µJ (off)
Standard
61 nC
31ns/110ns
400V, 40A, 7.5Ohm, 15V
-
AOK60B65HQ3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-247-3
-
-
120 A
650 V
500 W
106 ns
TO-247
AlphaIGBT™
180 A
2.5V @ 15V, 60A
2.21mJ (on), 1.2mJ (off)
Standard
84 nC
36ns/157ns
400V, 60A, 5Ohm, 15V
-
AOK60B65H2AL
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
-
-
120 A
650 V
416 W
318 ns
TO-247
AlphaIGBT™
180 A
2.5V @ 15V, 60A
2.36mJ (on), 1.17mJ (off)
Standard
84 nC
35ns/168ns
400V, 60A, 5Ohm, 15V
-

About  Single IGBTs

Single Insulated-Gate Bipolar Transistors (IGBTs) are sophisticated semiconductor devices composed of multiple layers and equipped with three terminals. These devices are specifically designed to handle high currents and offer rapid switching capabilities. They are highly valued in a wide range of applications. The performance and characteristics of single IGBTs are defined by several key parameters. These parameters include the device type, collector-emitter breakdown voltage, collector current rating, pulsed collector current rating, VCE(ON), switching energy, and gate charge. The device type refers to the specific model or variant of the IGBT. Different models may possess distinct features and characteristics tailored to meet the requirements of different applications. The collector-emitter breakdown voltage represents the maximum voltage that the device can withstand across its collector and emitter terminals without experiencing a breakdown or failure. The collector current rating indicates the maximum continuous current that the IGBT can handle while maintaining proper functionality. The pulsed collector current rating specifies the maximum current that the IGBT can endure for short durations, typically in pulsed or transient conditions. VCE(ON) signifies the voltage drop across the collector-emitter junction when the IGBT is fully turned on and conducting current. This parameter is crucial for power loss calculations and efficiency analysis. Switching energy refers to the amount of energy dissipated during the switching process of the IGBT. Minimizing switching energy is vital for reducing power losses and enhancing overall efficiency. Lastly, gate charge denotes the amount of charge required to turn the IGBT on or off. Gate charge influences the switching speed and control characteristics of the device. By considering these parameters, engineers and designers can carefully select the most suitable single IGBT that aligns with the specific requirements of their application, ensuring optimal performance and reliability.