AlphaIGBT™ Series, Single IGBTs

Results:
20
Manufacturer
Series
Power - Max
Switching Energy
Td (on/off) @ 25°C
Vce(on) (Max) @ Vge, Ic
Current - Collector Pulsed (Icm)
Gate Charge
Test Condition
Current - Collector (Ic) (Max)
Reverse Recovery Time (trr)
Supplier Device Package
Package / Case
Voltage - Collector Emitter Breakdown (Max)
Operating Temperature
Mounting Type
Input Type
Grade
Qualification
IGBT Type
Results remaining20
Applied Filters:
AlphaIGBT™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseSupplier Device PackageIGBT TypeCurrent - Collector (Ic) (Max)Operating TemperatureGradeVoltage - Collector Emitter Breakdown (Max)SeriesCurrent - Collector Pulsed (Icm)Vce(on) (Max) @ Vge, IcPower - MaxSwitching EnergyInput TypeGate ChargeTd (on/off) @ 25°CTest ConditionQualificationReverse Recovery Time (trr)
AOB15B65MQ1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-
30 A
-55°C ~ 175°C (TJ)
-
650 V
AlphaIGBT™
45 A
2.15V @ 15V, 15A
214 W
290µJ (on), 200µJ (off)
Standard
32 nC
15ns/94ns
400V, 15A, 20Ohm, 15V
-
106 ns
AOK50B65GL1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
TO-247
-
100 A
-55°C ~ 175°C (TJ)
-
650 V
AlphaIGBT™
300 A
2V @ 15V, 50A
312 W
3.37mJ (on), 1.59mJ (off)
Standard
120 nC
282ns/915ns
300V, 50A, 100Ohm, 15V
-
-
AOK40B120P1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
TO-247
-
80 A
-55°C ~ 175°C (TJ)
-
1200 V
AlphaIGBT™
160 A
2.3V @ 15V, 40A
600 W
2.5mJ (on), 1.3mJ (off)
Standard
202 nC
53ns/210ns
600V, 40A, 7.5Ohm, 15V
-
-
AOK60B65H2AL
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
TO-247
-
120 A
-55°C ~ 150°C (TJ)
-
650 V
AlphaIGBT™
180 A
2.5V @ 15V, 60A
416 W
2.36mJ (on), 1.17mJ (off)
Standard
84 nC
35ns/168ns
400V, 60A, 5Ohm, 15V
-
318 ns
AOK60B65HQ3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
TO-247
-
120 A
-55°C ~ 175°C (TJ)
-
650 V
AlphaIGBT™
180 A
2.5V @ 15V, 60A
500 W
2.21mJ (on), 1.2mJ (off)
Standard
84 nC
36ns/157ns
400V, 60A, 5Ohm, 15V
-
106 ns
AOK40B65HQ1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
TO-247
-
80 A
-55°C ~ 175°C (TJ)
-
650 V
AlphaIGBT™
120 A
2.6V @ 15V, 40A
312 W
1.19mJ (on), 380µJ (off)
Standard
61 nC
31ns/110ns
400V, 40A, 7.5Ohm, 15V
-
-
AOK40B65HQ2
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
TO-247
-
80 A
-55°C ~ 175°C (TJ)
-
650 V
AlphaIGBT™
120 A
2.6V @ 15V, 40A
312 W
1.19mJ (on), 380µJ (off)
Standard
61 nC
31ns/110ns
400V, 40A, 7.5Ohm, 15V
-
-
AOGF60B65H2AL
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-3P-3 Full Pack
TO-3PF
-
120 A
-55°C ~ 150°C (TJ)
-
650 V
AlphaIGBT™
180 A
2.5V @ 15V, 60A
74 W
2.36mJ (on), 1.17mJ (off)
Standard
84 nC
35ns/168ns
400V, 60A, 5Ohm, 15V
-
318 ns
AOKS40B65H2AL
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
TO-247
-
80 A
-55°C ~ 150°C (TJ)
-
650 V
AlphaIGBT™
120 A
2.6V @ 15V, 40A
260 W
1.17mJ (on), 540µJ (off)
Standard
61 nC
30ns/117ns
400V, 40A, 7.5Ohm, 15V
-
-
AOK40B65HQ3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
TO-247
-
80 A
-55°C ~ 175°C (TJ)
-
650 V
AlphaIGBT™
120 A
2.6V @ 15V, 40A
312 W
1.19mJ (on), 380µJ (off)
Standard
61 nC
31ns/110ns
400V, 40A, 7.5Ohm, 15V
-
106 ns
AOD5B65MQ1E
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
-
10 A
-55°C ~ 150°C (TJ)
-
650 V
AlphaIGBT™
15 A
2.7V @ 15V, 5A
52 W
90µJ (on), 60µJ (off)
Standard
8.8 nC
7ns/78ns
400V, 5A, 60Ohm, 15V
-
74 ns
AOB30B65LN2V
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-
60 A
-55°C ~ 175°C (TJ)
-
650 V
AlphaIGBT™
90 A
2.35V @ 15V, 30A
227 W
880µJ (on), 350µJ (off)
Standard
52 nC
23ns/109ns
400V, 30A, 10Ohm, 15V
-
312 ns
AOT15B65MQ1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
TO-220
-
30 A
-55°C ~ 175°C (TJ)
-
650 V
AlphaIGBT™
45 A
2.15V @ 15V, 15A
214 W
290µJ (on), 200µJ (off)
Standard
32 nC
15ns/94ns
400V, 15A, 20Ohm, 15V
-
106 ns
AOT10B65MQ2
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
TO-220
-
20 A
-55°C ~ 175°C (TJ)
-
650 V
AlphaIGBT™
30 A
2V @ 15V, 10A
150 W
180µJ (on), 130µJ (off)
Standard
24 nC
12ns/91ns
400V, 10A, 30Ohm, 15V
-
106 ns
AOT10B60M1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
TO-220
-
20 A
-55°C ~ 175°C (TJ)
-
600 V
AlphaIGBT™
25 A
2.9V @ 15V, 10A
83 W
190µJ (on), 140µJ (off)
Standard
14 nC
5.5ns/61ns
400V, 10A, 30Ohm, 15V
-
-
AOTF10B65MQ2
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3 Full Pack
TO-220F
-
20 A
-55°C ~ 150°C (TJ)
-
650 V
AlphaIGBT™
30 A
2V @ 15V, 10A
30 W
180µJ (on), 130µJ (off)
Standard
24 nC
12ns/91ns
400V, 10A, 30Ohm, 15V
-
100 ns
AOTF8B65MQ1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3 Full Pack
TO-220F
-
16 A
-55°C ~ 150°C (TJ)
-
650 V
AlphaIGBT™
24 A
2.25V @ 15V, 8A
30 W
160µJ (on), 110µJ (off)
Standard
22 nC
8.5ns/102ns
400V, 8A, 37.5Ohm, 15V
-
94 ns
AOTF5B65M2
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3 Full Pack
TO-220F
-
10 A
-55°C ~ 150°C (TJ)
-
650 V
AlphaIGBT™
15 A
1.98V @ 15V, 5A
25 W
80µJ (on), 70µJ (off)
Standard
14 nC
8.5ns/106ns
400V, 5A, 60Ohm, 15V
-
-
AOD8B65MQ1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
-
16 A
-55°C ~ 150°C (TJ)
-
650 V
AlphaIGBT™
24 A
2.25V @ 15V, 8A
89 W
160µJ (on), 110µJ (off)
Standard
22 nC
8.5ns/102ns
400V, 8A, 37.5Ohm, 15V
-
94 ns
AOD6B65MQ1E
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
-
12 A
-55°C ~ 150°C (TJ)
-
650 V
AlphaIGBT™
18 A
2.4V @ 15V, 6A
96 W
110µJ (on), 80µJ (off)
Standard
13.5 nC
9ns/91ns
400V, 6A, 50Ohm, 15V
-
81 ns

About  Single IGBTs

Single Insulated-Gate Bipolar Transistors (IGBTs) are sophisticated semiconductor devices composed of multiple layers and equipped with three terminals. These devices are specifically designed to handle high currents and offer rapid switching capabilities. They are highly valued in a wide range of applications. The performance and characteristics of single IGBTs are defined by several key parameters. These parameters include the device type, collector-emitter breakdown voltage, collector current rating, pulsed collector current rating, VCE(ON), switching energy, and gate charge. The device type refers to the specific model or variant of the IGBT. Different models may possess distinct features and characteristics tailored to meet the requirements of different applications. The collector-emitter breakdown voltage represents the maximum voltage that the device can withstand across its collector and emitter terminals without experiencing a breakdown or failure. The collector current rating indicates the maximum continuous current that the IGBT can handle while maintaining proper functionality. The pulsed collector current rating specifies the maximum current that the IGBT can endure for short durations, typically in pulsed or transient conditions. VCE(ON) signifies the voltage drop across the collector-emitter junction when the IGBT is fully turned on and conducting current. This parameter is crucial for power loss calculations and efficiency analysis. Switching energy refers to the amount of energy dissipated during the switching process of the IGBT. Minimizing switching energy is vital for reducing power losses and enhancing overall efficiency. Lastly, gate charge denotes the amount of charge required to turn the IGBT on or off. Gate charge influences the switching speed and control characteristics of the device. By considering these parameters, engineers and designers can carefully select the most suitable single IGBT that aligns with the specific requirements of their application, ensuring optimal performance and reliability.