POWER MOS 8® Series, Single IGBTs

Results:
2
Manufacturer
Series
Test Condition
Reverse Recovery Time (trr)
Switching Energy
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Td (on/off) @ 25°C
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Gate Charge
Power - Max
Operating Temperature
Input Type
Grade
Mounting Type
Supplier Device Package
Qualification
Package / Case
IGBT Type
Results remaining2
Applied Filters:
POWER MOS 8®
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseIGBT TypeVoltage - Collector Emitter Breakdown (Max)GradeReverse Recovery Time (trr)SeriesCurrent - Collector (Ic) (Max)Current - Collector Pulsed (Icm)Vce(on) (Max) @ Vge, IcPower - MaxSwitching EnergyInput TypeGate ChargeTd (on/off) @ 25°CTest ConditionSupplier Device PackageQualification
APT36GA60SD15
IGBT PT COMBI 600V 36A TO-268
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
PT
600 V
-
19 ns
POWER MOS 8®
65 A
109 A
2.5V @ 15V, 20A
290 W
307µJ (on), 254µJ (off)
Standard
102 nC
16ns/122ns
400V, 20A, 10Ohm, 15V
D3PAK
-
APT80GA90S
IGBT PT MOS 8 SINGLE 900 V 80 A
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
PT
900 V
-
-
POWER MOS 8®
145 A
239 A
3.1V @ 15V, 47A
625 W
1.625mJ (on), 1.389mJ (off)
Standard
200 nC
18ns/149ns
600V, 47A, 4.7Ohm, 15V
D3PAK
-

About  Single IGBTs

Single Insulated-Gate Bipolar Transistors (IGBTs) are sophisticated semiconductor devices composed of multiple layers and equipped with three terminals. These devices are specifically designed to handle high currents and offer rapid switching capabilities. They are highly valued in a wide range of applications. The performance and characteristics of single IGBTs are defined by several key parameters. These parameters include the device type, collector-emitter breakdown voltage, collector current rating, pulsed collector current rating, VCE(ON), switching energy, and gate charge. The device type refers to the specific model or variant of the IGBT. Different models may possess distinct features and characteristics tailored to meet the requirements of different applications. The collector-emitter breakdown voltage represents the maximum voltage that the device can withstand across its collector and emitter terminals without experiencing a breakdown or failure. The collector current rating indicates the maximum continuous current that the IGBT can handle while maintaining proper functionality. The pulsed collector current rating specifies the maximum current that the IGBT can endure for short durations, typically in pulsed or transient conditions. VCE(ON) signifies the voltage drop across the collector-emitter junction when the IGBT is fully turned on and conducting current. This parameter is crucial for power loss calculations and efficiency analysis. Switching energy refers to the amount of energy dissipated during the switching process of the IGBT. Minimizing switching energy is vital for reducing power losses and enhancing overall efficiency. Lastly, gate charge denotes the amount of charge required to turn the IGBT on or off. Gate charge influences the switching speed and control characteristics of the device. By considering these parameters, engineers and designers can carefully select the most suitable single IGBT that aligns with the specific requirements of their application, ensuring optimal performance and reliability.