Automotive, AEC-Q101 Series, Single IGBTs

Results:
13
Manufacturer
Series
Switching Energy
Td (on/off) @ 25°C
Gate Charge
Reverse Recovery Time (trr)
Vce(on) (Max) @ Vge, Ic
Power - Max
Test Condition
Current - Collector (Ic) (Max)
Supplier Device Package
Current - Collector Pulsed (Icm)
IGBT Type
Package / Case
Operating Temperature
Voltage - Collector Emitter Breakdown (Max)
Input Type
Mounting Type
Results remaining13
Applied Filters:
Automotive, AEC-Q101
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureSeriesPackage / CaseSupplier Device PackageIGBT TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power - MaxCurrent - Collector Pulsed (Icm)Vce(on) (Max) @ Vge, IcSwitching EnergyInput TypeGate ChargeTd (on/off) @ 25°CTest ConditionReverse Recovery Time (trr)
AUIRG4PC40S-E
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
Automotive, AEC-Q101
TO-247-3
TO-247AD
-
600 V
60 A
160 W
120 A
1.5V @ 15V, 31A
450µJ (on), 6.5mJ (off)
Standard
150 nC
22ns/650ns
480V, 31A, 10Ohm, 15V
-
AUIRGB4062D1-INF
IGBT, 59A I(C), 600V V(BR)CES, N
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
Automotive, AEC-Q101
TO-220-3
TO-220AB
Trench
600 V
59 A
246 W
72 A
1.77V @ 15V, 24A
532µJ (on), 311µJ (off)
Standard
51 nC
19ns/90ns
400V, 24A, 10Ohm, 15V
102 ns
FGH40N60SMDF-F085
INSULATED GATE BIPOLAR TRANSISTO
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
Automotive, AEC-Q101
TO-247-3
TO-247
Field Stop
600 V
80 A
349 W
120 A
2.5V @ 15V, 40A
1.3mJ (on), 260µJ (off)
Standard
122 nC
18ns/110ns
400V, 40A, 6Ohm, 15V
90 ns
FGH20N60SFDTU-F085
INSULATED GATE BIPOLAR TRANSISTO
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
Automotive, AEC-Q101
TO-247-3
TO-247
Field Stop
600 V
40 A
165 W
60 A
2.8V @ 15V, 20A
430µJ (on), 130µJ (off)
Standard
66 nC
13ns/90ns
400V, 20A, 10Ohm, 15V
40 ns
FGH40N65UFDTU-F085
INSULATED GATE BIPOLAR TRANSISTO
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
Automotive, AEC-Q101
TO-247-3
TO-247
Field Stop
650 V
80 A
290 W
120 A
2.4V @ 15V, 40A
1.28mJ (on), 500µJ (off)
Standard
119 nC
23ns/126ns
400V, 40A, 10Ohm, 15V
65 ns
FGH40N65UFDTU-F085
IGBT FIELD STOP 650V 80A TO247-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
Automotive, AEC-Q101
TO-247-3
TO-247-3
Field Stop
650 V
80 A
290 W
120 A
2.4V @ 15V, 40A
1.28mJ (on), 500µJ (off)
Standard
119 nC
23ns/126ns
400V, 40A, 10Ohm, 15V
65 ns
FGH20N60SFDTU-F085
IGBT FIELD STOP 600V 40A TO247-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
Automotive, AEC-Q101
TO-247-3
TO-247-3
Field Stop
600 V
40 A
165 W
60 A
2.8V @ 15V, 20A
430µJ (on), 130µJ (off)
Standard
66 nC
13ns/90ns
400V, 20A, 10Ohm, 15V
40 ns
FGH40N60SFDTU-F085
IGBT FIELD STOP 600V 80A TO247-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
Automotive, AEC-Q101
TO-247-3
TO-247-3
Field Stop
600 V
80 A
290 W
120 A
2.9V @ 15V, 40A
1.23mJ (on), 380µJ (off)
Standard
121 nC
21ns/138ns
400V, 40A, 10Ohm, 15V
68 ns
FGH40N60SMDF-F085
IGBT FIELD STOP 600V 80A TO247-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
Automotive, AEC-Q101
TO-247-3
TO-247-3
Field Stop
600 V
80 A
349 W
120 A
2.5V @ 15V, 40A
1.3mJ (on), 260µJ (off)
Standard
122 nC
18ns/110ns
400V, 40A, 6Ohm, 15V
90 ns
FGH40T65SPD-F085
IGBT NPT 650V 80A TO247-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
Automotive, AEC-Q101
TO-247-3
TO-247-3
NPT
650 V
80 A
267 W
120 A
2.4V @ 15V, 40A
1.16mJ (on), 270µJ (off)
Standard
36 nC
18ns/35ns
400V, 40A, 6Ohm, 15V
-
FGH40N60SFDTU-F085
INSULATED GATE BIPOLAR TRANSISTO
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
Automotive, AEC-Q101
TO-247-3
TO-247
Field Stop
600 V
80 A
290 W
120 A
2.9V @ 15V, 40A
1.23mJ (on), 380µJ (off)
Standard
121 nC
21ns/138ns
400V, 40A, 10Ohm, 15V
68 ns
FGH40T65SPD-F085
INSULATED GATE BIPOLAR TRANSISTO
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
Automotive, AEC-Q101
TO-247-3
TO-247
NPT
650 V
80 A
267 W
120 A
2.4V @ 15V, 40A
1.16mJ (on), 270µJ (off)
Standard
36 nC
18ns/35ns
400V, 40A, 6Ohm, 15V
-
AUIRGPS4070D0
AUIRGPS4070D0 - AUTOMOTIVE IGBT
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
Automotive, AEC-Q101
TO-274AA
PG-TO274-3-903
Trench
600 V
240 A
750 W
360 A
2V @ 15V, 120A
5.7mJ (on), 4.2mJ (off)
Standard
250 nC
40ns/140ns
400V, 120A, 4.7Ohm, 15V
210 ns

Single IGBTs

Single Insulated-Gate Bipolar Transistors (IGBTs) are sophisticated semiconductor devices composed of multiple layers and equipped with three terminals. These devices are specifically designed to handle high currents and offer rapid switching capabilities. They are highly valued in a wide range of applications. The performance and characteristics of single IGBTs are defined by several key parameters. These parameters include the device type, collector-emitter breakdown voltage, collector current rating, pulsed collector current rating, VCE(ON), switching energy, and gate charge. The device type refers to the specific model or variant of the IGBT. Different models may possess distinct features and characteristics tailored to meet the requirements of different applications. The collector-emitter breakdown voltage represents the maximum voltage that the device can withstand across its collector and emitter terminals without experiencing a breakdown or failure. The collector current rating indicates the maximum continuous current that the IGBT can handle while maintaining proper functionality. The pulsed collector current rating specifies the maximum current that the IGBT can endure for short durations, typically in pulsed or transient conditions. VCE(ON) signifies the voltage drop across the collector-emitter junction when the IGBT is fully turned on and conducting current. This parameter is crucial for power loss calculations and efficiency analysis. Switching energy refers to the amount of energy dissipated during the switching process of the IGBT. Minimizing switching energy is vital for reducing power losses and enhancing overall efficiency. Lastly, gate charge denotes the amount of charge required to turn the IGBT on or off. Gate charge influences the switching speed and control characteristics of the device. By considering these parameters, engineers and designers can carefully select the most suitable single IGBT that aligns with the specific requirements of their application, ensuring optimal performance and reliability.