Automotive, AEC-Q101 Series, Single IGBTs

Results:
13
Manufacturer
Series
Switching Energy
Td (on/off) @ 25°C
Gate Charge
Reverse Recovery Time (trr)
Vce(on) (Max) @ Vge, Ic
Power - Max
Test Condition
Current - Collector (Ic) (Max)
Supplier Device Package
Current - Collector Pulsed (Icm)
IGBT Type
Package / Case
Operating Temperature
Voltage - Collector Emitter Breakdown (Max)
Input Type
Mounting Type
Results remaining13
Applied Filters:
Automotive, AEC-Q101
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureSeriesPackage / CaseVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Supplier Device PackageReverse Recovery Time (trr)IGBT TypeCurrent - Collector Pulsed (Icm)Vce(on) (Max) @ Vge, IcPower - MaxSwitching EnergyInput TypeGate ChargeTd (on/off) @ 25°CTest Condition
FGH40N60SFDTU-F085
INSULATED GATE BIPOLAR TRANSISTO
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
Automotive, AEC-Q101
TO-247-3
600 V
80 A
TO-247
68 ns
Field Stop
120 A
2.9V @ 15V, 40A
290 W
1.23mJ (on), 380µJ (off)
Standard
121 nC
21ns/138ns
400V, 40A, 10Ohm, 15V
AUIRGPS4070D0
AUIRGPS4070D0 - AUTOMOTIVE IGBT
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
Automotive, AEC-Q101
TO-274AA
600 V
240 A
PG-TO274-3-903
210 ns
Trench
360 A
2V @ 15V, 120A
750 W
5.7mJ (on), 4.2mJ (off)
Standard
250 nC
40ns/140ns
400V, 120A, 4.7Ohm, 15V
FGH40T65SPD-F085
INSULATED GATE BIPOLAR TRANSISTO
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
Automotive, AEC-Q101
TO-247-3
650 V
80 A
TO-247
-
NPT
120 A
2.4V @ 15V, 40A
267 W
1.16mJ (on), 270µJ (off)
Standard
36 nC
18ns/35ns
400V, 40A, 6Ohm, 15V
FGH20N60SFDTU-F085
IGBT FIELD STOP 600V 40A TO247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
Automotive, AEC-Q101
TO-247-3
600 V
40 A
TO-247-3
40 ns
Field Stop
60 A
2.8V @ 15V, 20A
165 W
430µJ (on), 130µJ (off)
Standard
66 nC
13ns/90ns
400V, 20A, 10Ohm, 15V
FGH40N65UFDTU-F085
IGBT FIELD STOP 650V 80A TO247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
Automotive, AEC-Q101
TO-247-3
650 V
80 A
TO-247-3
65 ns
Field Stop
120 A
2.4V @ 15V, 40A
290 W
1.28mJ (on), 500µJ (off)
Standard
119 nC
23ns/126ns
400V, 40A, 10Ohm, 15V
FGH40N60SFDTU-F085
IGBT FIELD STOP 600V 80A TO247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
Automotive, AEC-Q101
TO-247-3
600 V
80 A
TO-247-3
68 ns
Field Stop
120 A
2.9V @ 15V, 40A
290 W
1.23mJ (on), 380µJ (off)
Standard
121 nC
21ns/138ns
400V, 40A, 10Ohm, 15V
FGH40T65SPD-F085
IGBT NPT 650V 80A TO247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
Automotive, AEC-Q101
TO-247-3
650 V
80 A
TO-247-3
-
NPT
120 A
2.4V @ 15V, 40A
267 W
1.16mJ (on), 270µJ (off)
Standard
36 nC
18ns/35ns
400V, 40A, 6Ohm, 15V
FGH40N60SMDF-F085
IGBT FIELD STOP 600V 80A TO247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
Automotive, AEC-Q101
TO-247-3
600 V
80 A
TO-247-3
90 ns
Field Stop
120 A
2.5V @ 15V, 40A
349 W
1.3mJ (on), 260µJ (off)
Standard
122 nC
18ns/110ns
400V, 40A, 6Ohm, 15V
FGH40N60SMDF-F085
INSULATED GATE BIPOLAR TRANSISTO
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
Automotive, AEC-Q101
TO-247-3
600 V
80 A
TO-247
90 ns
Field Stop
120 A
2.5V @ 15V, 40A
349 W
1.3mJ (on), 260µJ (off)
Standard
122 nC
18ns/110ns
400V, 40A, 6Ohm, 15V
AUIRG4PC40S-E
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
Automotive, AEC-Q101
TO-247-3
600 V
60 A
TO-247AD
-
-
120 A
1.5V @ 15V, 31A
160 W
450µJ (on), 6.5mJ (off)
Standard
150 nC
22ns/650ns
480V, 31A, 10Ohm, 15V
FGH20N60SFDTU-F085
INSULATED GATE BIPOLAR TRANSISTO
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
Automotive, AEC-Q101
TO-247-3
600 V
40 A
TO-247
40 ns
Field Stop
60 A
2.8V @ 15V, 20A
165 W
430µJ (on), 130µJ (off)
Standard
66 nC
13ns/90ns
400V, 20A, 10Ohm, 15V
AUIRGB4062D1-INF
IGBT, 59A I(C), 600V V(BR)CES, N
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
Automotive, AEC-Q101
TO-220-3
600 V
59 A
TO-220AB
102 ns
Trench
72 A
1.77V @ 15V, 24A
246 W
532µJ (on), 311µJ (off)
Standard
51 nC
19ns/90ns
400V, 24A, 10Ohm, 15V
FGH40N65UFDTU-F085
INSULATED GATE BIPOLAR TRANSISTO
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
Automotive, AEC-Q101
TO-247-3
650 V
80 A
TO-247
65 ns
Field Stop
120 A
2.4V @ 15V, 40A
290 W
1.28mJ (on), 500µJ (off)
Standard
119 nC
23ns/126ns
400V, 40A, 10Ohm, 15V

About  Single IGBTs

Single Insulated-Gate Bipolar Transistors (IGBTs) are sophisticated semiconductor devices composed of multiple layers and equipped with three terminals. These devices are specifically designed to handle high currents and offer rapid switching capabilities. They are highly valued in a wide range of applications. The performance and characteristics of single IGBTs are defined by several key parameters. These parameters include the device type, collector-emitter breakdown voltage, collector current rating, pulsed collector current rating, VCE(ON), switching energy, and gate charge. The device type refers to the specific model or variant of the IGBT. Different models may possess distinct features and characteristics tailored to meet the requirements of different applications. The collector-emitter breakdown voltage represents the maximum voltage that the device can withstand across its collector and emitter terminals without experiencing a breakdown or failure. The collector current rating indicates the maximum continuous current that the IGBT can handle while maintaining proper functionality. The pulsed collector current rating specifies the maximum current that the IGBT can endure for short durations, typically in pulsed or transient conditions. VCE(ON) signifies the voltage drop across the collector-emitter junction when the IGBT is fully turned on and conducting current. This parameter is crucial for power loss calculations and efficiency analysis. Switching energy refers to the amount of energy dissipated during the switching process of the IGBT. Minimizing switching energy is vital for reducing power losses and enhancing overall efficiency. Lastly, gate charge denotes the amount of charge required to turn the IGBT on or off. Gate charge influences the switching speed and control characteristics of the device. By considering these parameters, engineers and designers can carefully select the most suitable single IGBT that aligns with the specific requirements of their application, ensuring optimal performance and reliability.