GenX4™, XPT™ Series, Single IGBTs

Results:
24
Manufacturer
Series
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Current - Collector (Ic) (Max)
Switching Energy
Td (on/off) @ 25°C
Gate Charge
Test Condition
Reverse Recovery Time (trr)
Power - Max
Supplier Device Package
Package / Case
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
Operating Temperature
Input Type
Grade
Qualification
IGBT Type
Results remaining24
Applied Filters:
GenX4™, XPT™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseIGBT TypeOperating TemperatureGradeVoltage - Collector Emitter Breakdown (Max)SeriesCurrent - Collector (Ic) (Max)Current - Collector Pulsed (Icm)Vce(on) (Max) @ Vge, IcPower - MaxSwitching EnergyInput TypeGate ChargeTd (on/off) @ 25°CTest ConditionReverse Recovery Time (trr)QualificationSupplier Device Package
IXXH80N65B4
IGBT 650V 160A 625W TO247AD
1+
$5.5775
5+
$5.2676
10+
$4.9577
Quantity
1,289 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PT
-55°C ~ 175°C (TJ)
-
650 V
GenX4™, XPT™
160 A
430 A
2V @ 15V, 80A
625 W
3.77mJ (on), 1.2mJ (off)
Standard
120 nC
38ns/120ns
400V, 80A, 3Ohm, 15V
-
-
TO-247AD (IXXH)
IXYA20N120B4HV
IGBT 1200V 20A GENX4 XPT TO263D2
1+
$17.4480
5+
$16.4786
10+
$15.5093
Quantity
1,187 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PT
-55°C ~ 175°C (TJ)
-
1200 V
GenX4™, XPT™
76 A
130 A
2.1V @ 15V, 20A
375 W
3.9mJ (on), 1.6mJ (off)
Standard
44 nC
15ns/200ns
960mV, 20A, 10Ohm, 15V
47 ns
-
TO-263HV
IXXH60N65B4H1
IGBT 650V 116A 380W TO247AD
1+
$16.4789
5+
$15.5634
10+
$14.6479
Quantity
888 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PT
-55°C ~ 175°C (TJ)
-
650 V
GenX4™, XPT™
116 A
230 A
2V @ 15V, 60A
380 W
3.13mJ (on), 1.15mJ (off)
Standard
95 nC
37ns/145ns
400V, 60A, 5Ohm, 15V
150 ns
-
TO-247AD (IXXH)
IXXH40N65B4H1
IGBT 650V 120A 455W TO247AD
1+
$13.1831
5+
$12.4507
10+
$11.7183
Quantity
150 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-2
PT
-55°C ~ 175°C (TJ)
-
650 V
GenX4™, XPT™
120 A
240 A
2V @ 15V, 40A
455 W
1.4mJ (on), 560µJ (off)
Standard
77 nC
28ns/144ns
400V, 40A, 5Ohm, 15V
120 ns
-
TO-247AD
IXXX160N65C4
IGBT 650V 290A 940W PLUS247
1+
$25.3521
5+
$23.9437
10+
$22.5352
Quantity
120 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3 Variant
PT
-55°C ~ 175°C (TJ)
-
650 V
GenX4™, XPT™
290 A
800 A
2.1V @ 15V, 160A
940 W
3.5mJ (on), 1.3mJ (off)
Standard
422 nC
52ns/197ns
400V, 80A, 1Ohm, 15V
-
-
PLUS247™-3
IXXH30N65B4
IGBT 650V 65A 230W TO247AD
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PT
-55°C ~ 175°C (TJ)
-
650 V
GenX4™, XPT™
65 A
146 A
2V @ 15V, 30A
230 W
1.55mJ (on), 480µJ (off)
Standard
52 nC
32ns/170ns
400V, 30A, 15Ohm, 15V
-
-
TO-247AD (IXXH)
IXXK160N65C4
IGBT 650V 290A 940W TO264
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-264-3, TO-264AA
PT
-55°C ~ 175°C (TJ)
-
650 V
GenX4™, XPT™
290 A
800 A
2.1V @ 15V, 160A
940 W
3.5mJ (on), 1.3mJ (off)
Standard
422 nC
52ns/197ns
400V, 80A, 1Ohm, 15V
-
-
TO-264 (IXXK)
IXYA20N120A4HV
DISC IGBT XPT-GENX4 TO-263D2
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PT
-55°C ~ 175°C (TJ)
-
1200 V
GenX4™, XPT™
80 A
135 A
1.9V @ 15V, 20A
375 W
3.6mJ (on), 2.75mJ (off)
Standard
46 nC
12ns/275ns
800mV, 20A, 10Ohm, 15V
54 ns
-
TO-263HV
IXXH110N65C4
IGBT 650V 234A 880W TO247AD
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PT
-55°C ~ 175°C (TJ)
-
650 V
GenX4™, XPT™
234 A
600 A
2.35V @ 15V, 110A
880 W
2.3mJ (on), 600µJ (off)
Standard
180 nC
35ns/143ns
400V, 55A, 2Ohm, 15V
-
-
TO-247AD (IXXH)
IXXH40N65B4
IGBT 650V 120A 455W TO247AD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PT
-55°C ~ 175°C (TJ)
-
650 V
GenX4™, XPT™
120 A
240 A
1.8V @ 15V, 40A
455 W
1.4mJ (on), 560µJ (off)
Standard
77 nC
28ns/144ns
400V, 40A, 5Ohm, 15V
-
-
TO-247AD (IXXH)
IXXX200N65B4
IGBT 650V 370A 1150W PLUS247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3 Variant
PT
-55°C ~ 175°C (TJ)
-
650 V
GenX4™, XPT™
370 A
1000 A
1.7V @ 15V, 160A
1150 W
4.4mJ (on), 2.2mJ (off)
Standard
553 nC
62ns/245ns
400V, 100A, 1Ohm, 15V
-
-
PLUS247™-3
IXYP24N100C4
IGBT DISCRETE TO-220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
PT
-55°C ~ 175°C (TJ)
-
1000 V
GenX4™, XPT™
76 A
132 A
2.3V @ 15V, 24A
375 W
3.6mJ (on), 1mJ (off)
Standard
43 nC
15ns/147ns
800V, 24A, 10Ohm, 15V
35 ns
-
TO-220
IXXH60N65C4
IGBT 650V 118A 455W TO247AD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PT
-55°C ~ 175°C (TJ)
-
650 V
GenX4™, XPT™
118 A
240 A
2.2V @ 15V, 60A
455 W
3.2mJ (on), 830µJ (off)
Standard
94 nC
37ns/133ns
400V, 60A, 5Ohm, 15V
-
-
TO-247AD (IXXH)
IXYA30N120A4HV
DISC IGBT XPT-GENX4 TO-263D2
1+
$15.0515
5+
$14.2154
10+
$13.3792
Quantity
474 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PT
-55°C ~ 175°C (TJ)
-
1200 V
GenX4™, XPT™
106 A
184 A
1.9V @ 15V, 25A
500 W
4mJ (on), 3.4mJ (off)
Standard
57 nC
15ns/235ns
960V, 25A, 5Ohm, 15V
42 ns
-
TO-263HV
IXXH60N65B4
IGBT 650V 116A 455W TO247AD
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PT
-55°C ~ 175°C (TJ)
-
650 V
GenX4™, XPT™
116 A
250 A
2V @ 15V, 60A
455 W
3.13mJ (on), 1.15mJ (off)
Standard
95 nC
37ns/145ns
400V, 60A, 5Ohm, 15V
-
-
TO-247AD (IXXH)
IXXR110N65B4H1
IGBT 650V 150A 455W ISOPLUS247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PT
-55°C ~ 175°C (TJ)
-
650 V
GenX4™, XPT™
150 A
460 A
2.2V @ 15V, 110A
455 W
2.2mJ (on), 1.05mJ (off)
Standard
183 nC
38ns/156ns
400V, 55A, 2Ohm, 15V
100 ns
-
ISOPLUS247™
IXXH80N65B4H1
IGBT 650V 160A 625W TO247AD
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PT
-55°C ~ 175°C (TJ)
-
650 V
GenX4™, XPT™
160 A
430 A
2V @ 15V, 80A
625 W
3.77mJ (on), 1.2mJ (off)
Standard
120 nC
38ns/120ns
400V, 80A, 3Ohm, 15V
150 ns
-
TO-247AD (IXXH)
IXXN340N65B4
IGBT MODULE DISC IGBT SOT227B
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Quantity
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PCB Symbol, Footprint & 3D Model
Chassis Mount
SOT-227-4, miniBLOC
PT
-55°C ~ 175°C (TJ)
-
650 V
GenX4™, XPT™
520 A
1200 A
1.7V @ 15V, 160A
1500 W
4.4mJ (on), 2.2mJ (off)
Standard
553 nC
62ns/245ns
400V, 100A, 1Ohm, 15V
65 ns
-
SOT-227B
IXYA20N120C4HV
IGBT 1200V 20A X4 HSPEED TO263D2
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PT
-55°C ~ 175°C (TJ)
-
1200 V
GenX4™, XPT™
68 A
120 A
2.5V @ 15V, 20A
375 W
4.4mJ (on), 1mJ (off)
Standard
44 nC
14ns/160ns
960mV, 20A, 10Ohm, 15V
53 ns
-
TO-263HV
IXXK160N65B4
IGBT 650V 310A 940W TO264
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-264-3, TO-264AA
PT
-55°C ~ 175°C (TJ)
-
650 V
GenX4™, XPT™
310 A
860 A
1.8V @ 15V, 160A
940 W
3.3mJ (on), 1.88mJ (off)
Standard
425 nC
52ns/220ns
400V, 80A, 1Ohm, 15V
-
-
TO-264 (IXXK)

About  Single IGBTs

Single Insulated-Gate Bipolar Transistors (IGBTs) are sophisticated semiconductor devices composed of multiple layers and equipped with three terminals. These devices are specifically designed to handle high currents and offer rapid switching capabilities. They are highly valued in a wide range of applications. The performance and characteristics of single IGBTs are defined by several key parameters. These parameters include the device type, collector-emitter breakdown voltage, collector current rating, pulsed collector current rating, VCE(ON), switching energy, and gate charge. The device type refers to the specific model or variant of the IGBT. Different models may possess distinct features and characteristics tailored to meet the requirements of different applications. The collector-emitter breakdown voltage represents the maximum voltage that the device can withstand across its collector and emitter terminals without experiencing a breakdown or failure. The collector current rating indicates the maximum continuous current that the IGBT can handle while maintaining proper functionality. The pulsed collector current rating specifies the maximum current that the IGBT can endure for short durations, typically in pulsed or transient conditions. VCE(ON) signifies the voltage drop across the collector-emitter junction when the IGBT is fully turned on and conducting current. This parameter is crucial for power loss calculations and efficiency analysis. Switching energy refers to the amount of energy dissipated during the switching process of the IGBT. Minimizing switching energy is vital for reducing power losses and enhancing overall efficiency. Lastly, gate charge denotes the amount of charge required to turn the IGBT on or off. Gate charge influences the switching speed and control characteristics of the device. By considering these parameters, engineers and designers can carefully select the most suitable single IGBT that aligns with the specific requirements of their application, ensuring optimal performance and reliability.