XPT™, GenX4™ Series, Single IGBTs

Results:
30
Manufacturer
Series
Current - Collector (Ic) (Max)
Switching Energy
Td (on/off) @ 25°C
Vce(on) (Max) @ Vge, Ic
Current - Collector Pulsed (Icm)
Gate Charge
Reverse Recovery Time (trr)
Test Condition
Power - Max
Supplier Device Package
Package / Case
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
IGBT Type
Operating Temperature
Input Type
Grade
Qualification
Results remaining30
Applied Filters:
XPT™, GenX4™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseIGBT TypeVoltage - Collector Emitter Breakdown (Max)Operating TemperatureGradeSeriesCurrent - Collector (Ic) (Max)Current - Collector Pulsed (Icm)Vce(on) (Max) @ Vge, IcPower - MaxSwitching EnergyInput TypeGate ChargeTd (on/off) @ 25°CTest ConditionReverse Recovery Time (trr)Supplier Device PackageQualification
IXYP20N120C4
IGBT DISCRETE TO-220
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Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
-
1200 V
-55°C ~ 175°C (TJ)
-
XPT™, GenX4™
68 A
120 A
2.5V @ 15V, 20A
375 W
4.4mJ (on), 1mJ (off)
Standard
44 nC
14ns/160ns
960V, 20A, 10Ohm, 15V
53 ns
TO-220 (IXYP)
-
IXXH80N65B4D1
DISC IGBT XPT-GENX4 TO-247AD
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PT
650 V
-55°C ~ 175°C (TJ)
-
XPT™, GenX4™
180 A
430 A
2.1V @ 15V, 80A
625 W
3.36mJ (on), 1.83mJ (off)
Standard
120 nC
26ns/112ns
400V, 80A, 3Ohm, 15V
100 ns
TO-247AD (IXXH)
-
IXYN110N120A4
IGBT 1200V 110A GNX4 XPT SOT227B
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Quantity
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PCB Symbol, Footprint & 3D Model
Chassis Mount
SOT-227-4, miniBLOC
PT
1200 V
-55°C ~ 175°C (TJ)
-
XPT™, GenX4™
275 A
950 A
1.8V @ 15V, 110A
830 W
2.5mJ (on), 8.4mJ (off)
Standard
305 nC
42ns/550ns
600V, 50A, 2Ohm, 15V
-
SOT-227B
-
IXXP12N65B4D1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
-
650 V
-55°C ~ 175°C (TJ)
-
XPT™, GenX4™
38 A
70 A
1.95V @ 15V, 12A
160 W
440µJ (on), 220µJ (off)
Standard
34 nC
13ns/158ns
400V, 12A, 20Ohm, 15V
43 ns
TO-220-3
-
IXXH30N65B4D1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
-
650 V
-55°C ~ 175°C (TJ)
-
XPT™, GenX4™
70 A
146 A
2.1V @ 15V, 30A
230 W
1.04mJ (on), 730µJ (off)
Standard
52 nC
20ns/150ns
400V, 30A, 15Ohm, 15V
65 ns
TO-247AD (IXXH)
-
IXYK110N120A4
IGBT 1200V 110A GENX4 XPT TO-264
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-264-3, TO-264AA
PT
1200 V
-55°C ~ 175°C (TJ)
-
XPT™, GenX4™
375 A
900 A
1.8V @ 15V, 110A
1360 W
2.5mJ (on), 8.4mJ (off)
Standard
305 nC
42ns/550ns
600V, 50A, 1.5Ohm, 15V
-
TO-264 (IXYK)
-
IXXH30N65C4D1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
-
650 V
-55°C ~ 175°C (TJ)
-
XPT™, GenX4™
62 A
136 A
2.5V @ 15V, 30A
230 W
1.1mJ (on), 400µJ (off)
Standard
47 nC
20ns/140ns
400V, 30A, 15Ohm, 15V
72 ns
TO-247AD (IXXH)
-
IXYX140N120A4
IGBT 140A 1200V PLUS247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3 Variant
PT
1200 V
-55°C ~ 175°C (TJ)
-
XPT™, GenX4™
480 A
1200 A
1.7V @ 15V, 140A
1500 W
4.9mJ (on), 12mJ (off)
Standard
420 nC
52ns/590ns
600V, 70A, 1.5Ohm, 15V
47 ns
PLUS247™-3
-
IXXH40N65B4D1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
-
650 V
-55°C ~ 175°C (TJ)
-
XPT™, GenX4™
115 A
225 A
2V @ 15V, 40A
455 W
1.4mJ (on), 800µJ (off)
Standard
66 nC
20ns/115ns
400V, 40A, 5Ohm, 15V
60 ns
TO-247 (IXTH)
-
IXYH30N120C4
DISC IGBT XPT-GENX4 TO-247AD
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PT
1200 V
-55°C ~ 175°C (TJ)
-
XPT™, GenX4™
94 A
166 A
2.4V @ 15V, 25A
500 W
4.8mJ (on), 1.5mJ (off)
Standard
57 nC
18ns/205ns
960V, 25A, 5Ohm, 15V
58 ns
TO-247 (IXYH)
-
IXYH30N120A4
DISC IGBT XPT-GENX4 TO-247AD
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PT
1200 V
-55°C ~ 175°C (TJ)
-
XPT™, GenX4™
106 A
184 A
1.9V @ 15V, 25A
500 W
4mJ (on), 3.4mJ (off)
Standard
57 nC
15ns/235ns
960V, 25A, 5Ohm, 15V
42 ns
TO-247 (IXYH)
-
IXYH30N120B4
DISC IGBT XPT-GENX4 TO-247AD
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PT
1200 V
-55°C ~ 175°C (TJ)
-
XPT™, GenX4™
100 A
174 A
2.1V @ 15V, 25A
500 W
4.4mJ (on), 2.6mJ (off)
Standard
58 nC
20ns/245ns
960V, 25A, 5Ohm, 15V
60 ns
TO-247 (IXYH)
-
IXYH40N120A4
IGBT 1200V 40A GENX4 XPT TO-247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PT
1200 V
-55°C ~ 175°C (TJ)
-
XPT™, GenX4™
140 A
275 A
1.8V @ 15V, 32A
600 W
2.3mJ (on), 3.75mJ (off)
Standard
90 nC
22ns/204ns
600V, 32A, 5Ohm, 15V
-
TO-247 (IXYH)
-
IXYT40N120A4HV
IGBT 1200V 40A GNX4 XPT TO-268HV
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
PT
1200 V
-55°C ~ 175°C (TJ)
-
XPT™, GenX4™
140 A
275 A
1.8V @ 15V, 32A
600 W
2.3mJ (on), 3.75mJ (off)
Standard
90 nC
22ns/204ns
600V, 32A, 5Ohm, 15V
-
TO-268HV (IXYT)
-
IXXH40N65C4D1
DISC IGBT XPT-GENX4 TO-247AD
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PT
650 V
-55°C ~ 175°C (TJ)
-
XPT™, GenX4™
110 A
215 A
2.3V @ 15V, 40A
455 W
1.6mJ (on), 420µJ (off)
Standard
68 nC
20ns/100ns
400V, 40A, 5Ohm, 15V
62 ns
TO-247 (IXTH)
-
IXXH110N65B4
DISC IGBT XPT-GENX4 TO-247AD
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PT
650 V
-55°C ~ 175°C (TJ)
-
XPT™, GenX4™
250 A
570 A
2.1V @ 15V, 110A
880 W
2.2mJ (on), 1.05mJ (off)
Standard
183 nC
26ns/146ns
400V, 55A, 2Ohm, 15V
40 ns
TO-247 (IXTH)
-
IXYP20N120B4
IGBT DISCRETE TO-220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
-
1200 V
-55°C ~ 175°C (TJ)
-
XPT™, GenX4™
76 A
130 A
2.1V @ 15V, 20A
375 W
3.9mJ (on), 1.6mJ (off)
Standard
44 nC
15ns/200ns
960V, 20A, 10Ohm, 15V
47 ns
TO-220 (IXYP)
-
IXYP20N120A4
IGBT DISCRETE TO-220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
PT
1200 V
-55°C ~ 175°C (TJ)
-
XPT™, GenX4™
80 A
135 A
1.9V @ 15V, 20A
375 W
3.6mJ (on), 2.75mJ (off)
Standard
46 nC
12ns/275ns
960V, 20A, 10Ohm, 15V
54 ns
TO-220 (IXYP)
-
IXYP24N100A4
IGBT DISCRETE TO-220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
PT
1000 V
-55°C ~ 175°C (TJ)
-
XPT™, GenX4™
85 A
145 A
1.9V @ 15V, 24A
375 W
3.5mJ (on), 2.3mJ (off)
Standard
44 nC
13ns/216ns
800V, 24A, 10Ohm, 15V
47 ns
TO-220 (IXYP)
-
IXYP30N120A4
IGBT DISCRETE TO-220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
-
1200 V
-55°C ~ 175°C (TJ)
-
XPT™, GenX4™
106 A
184 A
1.9V @ 15V, 25A
500 W
4mJ (on), 3.4mJ (off)
Standard
57 nC
15ns/235ns
960V, 25A, 5Ohm, 15V
42 ns
TO-220 (IXYP)
-

About  Single IGBTs

Single Insulated-Gate Bipolar Transistors (IGBTs) are sophisticated semiconductor devices composed of multiple layers and equipped with three terminals. These devices are specifically designed to handle high currents and offer rapid switching capabilities. They are highly valued in a wide range of applications. The performance and characteristics of single IGBTs are defined by several key parameters. These parameters include the device type, collector-emitter breakdown voltage, collector current rating, pulsed collector current rating, VCE(ON), switching energy, and gate charge. The device type refers to the specific model or variant of the IGBT. Different models may possess distinct features and characteristics tailored to meet the requirements of different applications. The collector-emitter breakdown voltage represents the maximum voltage that the device can withstand across its collector and emitter terminals without experiencing a breakdown or failure. The collector current rating indicates the maximum continuous current that the IGBT can handle while maintaining proper functionality. The pulsed collector current rating specifies the maximum current that the IGBT can endure for short durations, typically in pulsed or transient conditions. VCE(ON) signifies the voltage drop across the collector-emitter junction when the IGBT is fully turned on and conducting current. This parameter is crucial for power loss calculations and efficiency analysis. Switching energy refers to the amount of energy dissipated during the switching process of the IGBT. Minimizing switching energy is vital for reducing power losses and enhancing overall efficiency. Lastly, gate charge denotes the amount of charge required to turn the IGBT on or off. Gate charge influences the switching speed and control characteristics of the device. By considering these parameters, engineers and designers can carefully select the most suitable single IGBT that aligns with the specific requirements of their application, ensuring optimal performance and reliability.