TrenchStop™ 5 WR6 Series, Single IGBTs

Results:
4
Manufacturer
Series
Test Condition
Switching Energy
Current - Collector (Ic) (Max)
Td (on/off) @ 25°C
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Gate Charge
Power - Max
Reverse Recovery Time (trr)
IGBT Type
Operating Temperature
Input Type
Grade
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
Supplier Device Package
Qualification
Package / Case
Results remaining4
Applied Filters:
TrenchStop™ 5 WR6
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseGradeCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)SeriesIGBT TypeCurrent - Collector Pulsed (Icm)Vce(on) (Max) @ Vge, IcPower - MaxInput TypeGate ChargeSupplier Device PackageReverse Recovery Time (trr)QualificationTd (on/off) @ 25°CSwitching EnergyTest Condition
IKWH60N65WR6XKSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
TO-247-3
-
100 A
650 V
TrenchStop™ 5 WR6
Trench Field Stop
180 A
1.85V @ 15V, 60A
240 W
Standard
174 nC
PG-TO247-3-32
-
-
35ns/311ns
1.82mJ (on), 850µJ (off)
400V, 60A, 15Ohm, 15V
IKWH70N65WR6XKSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
TO-247-3
-
122 A
650 V
TrenchStop™ 5 WR6
Trench Field Stop
210 A
1.85V @ 15V, 70A
290 W
Standard
269 nC
PG-TO247-3-32
-
-
42ns/378ns
2.2mJ (on), 1.07mJ (off)
400V, 70A, 15Ohm, 15V
IKWH40N65WR6XKSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
TO-247-3
-
75 A
650 V
TrenchStop™ 5 WR6
Trench
120 A
1.85V @ 15V, 40A
175 W
Standard
117 nC
PG-TO247-3-32
79 ns
-
37ns/353ns
1.09mJ (on), 570µJ (off)
400V, 40A, 27Ohm, 15V
IKWH50N65WR6XKSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
TO-247-3
-
85 A
650 V
TrenchStop™ 5 WR6
Trench Field Stop
150 A
1.85V @ 15V, 50A
205 W
Standard
144 nC
PG-TO247-3-32
-
-
40ns/351ns
1.5mJ (on), 730µJ (off)
400V, 50A, 22Ohm, 15V

About  Single IGBTs

Single Insulated-Gate Bipolar Transistors (IGBTs) are sophisticated semiconductor devices composed of multiple layers and equipped with three terminals. These devices are specifically designed to handle high currents and offer rapid switching capabilities. They are highly valued in a wide range of applications. The performance and characteristics of single IGBTs are defined by several key parameters. These parameters include the device type, collector-emitter breakdown voltage, collector current rating, pulsed collector current rating, VCE(ON), switching energy, and gate charge. The device type refers to the specific model or variant of the IGBT. Different models may possess distinct features and characteristics tailored to meet the requirements of different applications. The collector-emitter breakdown voltage represents the maximum voltage that the device can withstand across its collector and emitter terminals without experiencing a breakdown or failure. The collector current rating indicates the maximum continuous current that the IGBT can handle while maintaining proper functionality. The pulsed collector current rating specifies the maximum current that the IGBT can endure for short durations, typically in pulsed or transient conditions. VCE(ON) signifies the voltage drop across the collector-emitter junction when the IGBT is fully turned on and conducting current. This parameter is crucial for power loss calculations and efficiency analysis. Switching energy refers to the amount of energy dissipated during the switching process of the IGBT. Minimizing switching energy is vital for reducing power losses and enhancing overall efficiency. Lastly, gate charge denotes the amount of charge required to turn the IGBT on or off. Gate charge influences the switching speed and control characteristics of the device. By considering these parameters, engineers and designers can carefully select the most suitable single IGBT that aligns with the specific requirements of their application, ensuring optimal performance and reliability.