Automotive, AEC-Q101, EcoSPARK® Series, Single IGBTs

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Automotive, AEC-Q101, EcoSPARK®
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ImageProduct DetailPriceAvailabilityECAD ModelSeriesMounting TypePackage / CaseSupplier Device PackageIGBT TypePower - MaxOperating TemperatureInput TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Vce(on) (Max) @ Vge, IcSwitching EnergyGate ChargeTd (on/off) @ 25°CTest ConditionReverse Recovery Time (trr)Current - Collector Pulsed (Icm)
FGD3040G2-F085
FGD3040G2_F085 - ECOSPARK2 IGN-I
1+
$31.2500
5+
$29.1667
10+
$27.0833
Quantity
2,500 Available
Can ship immediately
PCB Symbol, Footprint & 3D Model
Automotive, AEC-Q101, EcoSPARK®
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252, (D-Pak)
-
150 W
-55°C ~ 175°C (TJ)
Logic
400 V
41 A
1.25V @ 4V, 6A
-
21 nC
-/4.8µs
300V, 6.5A, 1kOhm, 5V
-
-
FGI3040G2_F085
IGBT, 41A, 390V, N-CHANNEL
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Automotive, AEC-Q101, EcoSPARK®
Through Hole
TO-262-3 Long Leads, I²Pak, TO-262AA
I2PAK (TO-262)
-
150 W
-55°C ~ 175°C (TJ)
Logic
400 V
41 A
1.25V @ 4V, 6A
-
21 nC
-/4.8µs
300V, 6.5A, 1kOhm, 5V
-
-
FGI3040G2-F085
IGBT, 41A, 390V, N-CHANNEL
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Automotive, AEC-Q101, EcoSPARK®
Through Hole
TO-262-3 Long Leads, I²Pak, TO-262AA
I2PAK (TO-262)
-
150 W
-55°C ~ 175°C (TJ)
Logic
400 V
41 A
1.25V @ 4V, 6A
-
21 nC
-/4.8µs
300V, 6.5A, 1kOhm, 5V
1.9 µs
-
FGB3440G2-F085
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Automotive, AEC-Q101, EcoSPARK®
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK (TO-263)
-
166 W
-40°C ~ 175°C (TJ)
Logic
400 V
26.9 A
1.2V @ 4V, 6A
-
24 nC
1µs/5.3µs
-
-
-

About  Single IGBTs

Single Insulated-Gate Bipolar Transistors (IGBTs) are sophisticated semiconductor devices composed of multiple layers and equipped with three terminals. These devices are specifically designed to handle high currents and offer rapid switching capabilities. They are highly valued in a wide range of applications. The performance and characteristics of single IGBTs are defined by several key parameters. These parameters include the device type, collector-emitter breakdown voltage, collector current rating, pulsed collector current rating, VCE(ON), switching energy, and gate charge. The device type refers to the specific model or variant of the IGBT. Different models may possess distinct features and characteristics tailored to meet the requirements of different applications. The collector-emitter breakdown voltage represents the maximum voltage that the device can withstand across its collector and emitter terminals without experiencing a breakdown or failure. The collector current rating indicates the maximum continuous current that the IGBT can handle while maintaining proper functionality. The pulsed collector current rating specifies the maximum current that the IGBT can endure for short durations, typically in pulsed or transient conditions. VCE(ON) signifies the voltage drop across the collector-emitter junction when the IGBT is fully turned on and conducting current. This parameter is crucial for power loss calculations and efficiency analysis. Switching energy refers to the amount of energy dissipated during the switching process of the IGBT. Minimizing switching energy is vital for reducing power losses and enhancing overall efficiency. Lastly, gate charge denotes the amount of charge required to turn the IGBT on or off. Gate charge influences the switching speed and control characteristics of the device. By considering these parameters, engineers and designers can carefully select the most suitable single IGBT that aligns with the specific requirements of their application, ensuring optimal performance and reliability.