POWER MOS 8™ Series, Single IGBTs

Results:
16
Manufacturer
Series
Gate Charge
Switching Energy
Td (on/off) @ 25°C
Vce(on) (Max) @ Vge, Ic
Test Condition
Current - Collector Pulsed (Icm)
Current - Collector (Ic) (Max)
Power - Max
Supplier Device Package
Reverse Recovery Time (trr)
Package / Case
Operating Temperature
Voltage - Collector Emitter Breakdown (Max)
Input Type
Grade
Mounting Type
Qualification
IGBT Type
Results remaining16
Applied Filters:
POWER MOS 8™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseIGBT TypeVoltage - Collector Emitter Breakdown (Max)GradeSupplier Device PackageSeriesCurrent - Collector (Ic) (Max)Current - Collector Pulsed (Icm)Vce(on) (Max) @ Vge, IcPower - MaxSwitching EnergyInput TypeGate ChargeTd (on/off) @ 25°CTest ConditionReverse Recovery Time (trr)Qualification
APT36GA60BD15
IGBT 600V 65A 290W TO-247
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Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
PT
600 V
-
TO-247 [B]
POWER MOS 8™
65 A
109 A
2.5V @ 15V, 20A
290 W
307µJ (on), 254µJ (off)
Standard
18 nC
16ns/122ns
400V, 20A, 10Ohm, 15V
-
-
APT36GA60B
IGBT 600V 65A 290W TO-247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
PT
600 V
-
TO-247 [B]
POWER MOS 8™
65 A
109 A
2.5V @ 15V, 20A
290 W
307µJ (on), 254µJ (off)
Standard
102 nC
16ns/122ns
400V, 20A, 10Ohm, 15V
-
-
APT64GA90B2D30
IGBT 900V 117A 500W TO-247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3 Variant
PT
900 V
-
-
POWER MOS 8™
117 A
193 A
3.1V @ 15V, 38A
500 W
1192µJ (on), 1088µJ (off)
Standard
162 nC
18ns/131ns
600V, 38A, 4.7Ohm, 15V
-
-
APT102GA60B2
IGBT 600V 183A 780W TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3 Variant
PT
600 V
-
-
POWER MOS 8™
183 A
307 A
2.5V @ 15V, 62A
780 W
1.354mJ (on), 1.614mJ (off)
Standard
294 nC
28ns/212ns
400V, 62A, 4.7Ohm, 15V
-
-
APT44GA60BD30C
IGBT 600V 78A 337W TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-
TO-247-3
PT
600 V
-
TO-247 [B]
POWER MOS 8™
78 A
130 A
1.6V @ 15V, 26A
337 W
409µJ (on), 450µJ (off)
Standard
128 nC
16ns/102ns
400V, 26A, 4.7Ohm, 15V
-
-
APT43GA90B
IGBT 900V 78A 337W TO-247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
PT
900 V
-
TO-247 [B]
POWER MOS 8™
78 A
129 A
3.1V @ 15V, 25A
337 W
875µJ (on), 425µJ (off)
Standard
116 nC
12ns/82ns
600V, 25A, 4.7Ohm, 15V
-
-
APT68GA60B
IGBT 600V 121A 520W TO-247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
PT
600 V
-
TO-247 [B]
POWER MOS 8™
121 A
202 A
2.5V @ 15V, 40A
520 W
715µJ (on), 607µJ (off)
Standard
298 nC
21ns/133ns
400V, 40A, 4.7Ohm, 15V
-
-
APT35GA90B
IGBT 900V 63A 290W TO-247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
PT
900 V
-
TO-247 [B]
POWER MOS 8™
63 A
105 A
3.1V @ 15V, 18A
290 W
642µJ (on), 382µJ (off)
Standard
84 nC
12ns/104ns
600V, 18A, 10Ohm, 15V
-
-
APT44GA60BD30
IGBT 600V 78A 337W TO-247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
PT
600 V
-
TO-247 [B]
POWER MOS 8™
78 A
130 A
2.5V @ 15V, 26A
337 W
409µJ (on), 258µJ (off)
Standard
128 nC
16ns/84ns
400V, 26A, 4.7Ohm, 15V
-
-
APT68GA60B2D40
IGBT 600V 121A 520W TO-247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3 Variant
PT
600 V
-
-
POWER MOS 8™
121 A
202 A
2.5V @ 15V, 40A
520 W
715µJ (on), 607µJ (off)
Standard
198 nC
21ns/133ns
400V, 40A, 4.7Ohm, 15V
-
-
APT68GA60LD40
IGBT 600V 121A 520W TO-264
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-264-3, TO-264AA
PT
600 V
-
TO-264 [L]
POWER MOS 8™
121 A
202 A
2.5V @ 15V, 40A
520 W
715µJ (on), 607µJ (off)
Standard
198 nC
21ns/133ns
400V, 40A, 4.7Ohm, 15V
22 ns
-
APT64GA90LD30
IGBT 900V 117A 500W TO-264
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-264-3, TO-264AA
PT
900 V
-
TO-264 [L]
POWER MOS 8™
117 A
193 A
3.1V @ 15V, 38A
500 W
1192µJ (on), 1088µJ (off)
Standard
162 nC
18ns/131ns
600V, 38A, 4.7Ohm, 15V
-
-
APT54GA60B
IGBT 600V 96A 416W TO-247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
PT
600 V
-
TO-247 [B]
POWER MOS 8™
96 A
161 A
2.5V @ 15V, 32A
416 W
534µJ (on), 466µJ (off)
Standard
158 nC
17ns/112ns
400V, 32A, 4.7Ohm, 15V
-
-
APT44GA60B
IGBT 600V 78A 337W TO-247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
PT
600 V
-
TO-247 [B]
POWER MOS 8™
78 A
130 A
2.5V @ 15V, 26A
337 W
409µJ (on), 258µJ (off)
Standard
128 nC
16ns/84ns
400V, 26A, 4.7Ohm, 15V
-
-
APT80GA90LD40
IGBT 900V 145A 625W TO-264
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-
TO-264-3, TO-264AA
PT
900 V
-
TO-264
POWER MOS 8™
145 A
239 A
3.1V @ 15V, 47A
625 W
1652µJ (on), 1389µJ (off)
Standard
200 nC
18ns/149ns
600V, 47A, 4.7Ohm, 15V
25 ns
-
APT80GA60LD40
IGBT 600V 143A 625W TO264
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-264-3, TO-264AA
PT
600 V
-
TO-264
POWER MOS 8™
143 A
240 A
2.5V @ 15V, 47A
625 W
840µJ (on), 751µJ (off)
Standard
230 nC
23ns/158ns
400V, 47A, 4.7Ohm, 15V
22 ns
-

About  Single IGBTs

Single Insulated-Gate Bipolar Transistors (IGBTs) are sophisticated semiconductor devices composed of multiple layers and equipped with three terminals. These devices are specifically designed to handle high currents and offer rapid switching capabilities. They are highly valued in a wide range of applications. The performance and characteristics of single IGBTs are defined by several key parameters. These parameters include the device type, collector-emitter breakdown voltage, collector current rating, pulsed collector current rating, VCE(ON), switching energy, and gate charge. The device type refers to the specific model or variant of the IGBT. Different models may possess distinct features and characteristics tailored to meet the requirements of different applications. The collector-emitter breakdown voltage represents the maximum voltage that the device can withstand across its collector and emitter terminals without experiencing a breakdown or failure. The collector current rating indicates the maximum continuous current that the IGBT can handle while maintaining proper functionality. The pulsed collector current rating specifies the maximum current that the IGBT can endure for short durations, typically in pulsed or transient conditions. VCE(ON) signifies the voltage drop across the collector-emitter junction when the IGBT is fully turned on and conducting current. This parameter is crucial for power loss calculations and efficiency analysis. Switching energy refers to the amount of energy dissipated during the switching process of the IGBT. Minimizing switching energy is vital for reducing power losses and enhancing overall efficiency. Lastly, gate charge denotes the amount of charge required to turn the IGBT on or off. Gate charge influences the switching speed and control characteristics of the device. By considering these parameters, engineers and designers can carefully select the most suitable single IGBT that aligns with the specific requirements of their application, ensuring optimal performance and reliability.