Polar™ Series, Single IGBTs

Results:
4
Manufacturer
Series
Current - Collector (Ic) (Max)
Vce(on) (Max) @ Vge, Ic
Gate Charge
Voltage - Collector Emitter Breakdown (Max)
Power - Max
Reverse Recovery Time (trr)
Operating Temperature
Input Type
Test Condition
Switching Energy
Grade
Mounting Type
Supplier Device Package
Td (on/off) @ 25°C
Current - Collector Pulsed (Icm)
Qualification
Package / Case
IGBT Type
Results remaining4
Applied Filters:
Polar™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureTest ConditionPackage / CaseSupplier Device PackageIGBT TypeGradeVoltage - Collector Emitter Breakdown (Max)SeriesCurrent - Collector (Ic) (Max)Vce(on) (Max) @ Vge, IcPower - MaxSwitching EnergyInput TypeGate ChargeTd (on/off) @ 25°CReverse Recovery Time (trr)Current - Collector Pulsed (Icm)Qualification
IXGQ170N30PB
IGBT 300V 170A 330W TO3P
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
-
TO-3P-3, SC-65-3
TO-3P
-
-
300 V
Polar™
170 A
1.7V @ 15V, 85A
330 W
-
Standard
143 nC
-
-
-
-
IXGQ240N30PB
IGBT 300V 240A 500W TO3P
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
-
TO-3P-3, SC-65-3
TO-3P
-
-
300 V
Polar™
240 A
1.6V @ 15V, 120A
500 W
-
Standard
225 nC
-
-
-
-
IXGQ85N33PCD1
IGBT 330V 85A 150W TO3P
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
-
TO-3P-3, SC-65-3
TO-3P
-
-
330 V
Polar™
85 A
3V @ 15V, 100A
150 W
-
Standard
80 nC
-
250 ns
-
-
IXGQ90N27PB
IGBT 270V 90A 150W TO3P
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
-
TO-3P-3, SC-65-3
TO-3P
-
-
270 V
Polar™
90 A
2.1V @ 15V, 50A
150 W
-
Standard
79 nC
-
-
-
-

About  Single IGBTs

Single Insulated-Gate Bipolar Transistors (IGBTs) are sophisticated semiconductor devices composed of multiple layers and equipped with three terminals. These devices are specifically designed to handle high currents and offer rapid switching capabilities. They are highly valued in a wide range of applications. The performance and characteristics of single IGBTs are defined by several key parameters. These parameters include the device type, collector-emitter breakdown voltage, collector current rating, pulsed collector current rating, VCE(ON), switching energy, and gate charge. The device type refers to the specific model or variant of the IGBT. Different models may possess distinct features and characteristics tailored to meet the requirements of different applications. The collector-emitter breakdown voltage represents the maximum voltage that the device can withstand across its collector and emitter terminals without experiencing a breakdown or failure. The collector current rating indicates the maximum continuous current that the IGBT can handle while maintaining proper functionality. The pulsed collector current rating specifies the maximum current that the IGBT can endure for short durations, typically in pulsed or transient conditions. VCE(ON) signifies the voltage drop across the collector-emitter junction when the IGBT is fully turned on and conducting current. This parameter is crucial for power loss calculations and efficiency analysis. Switching energy refers to the amount of energy dissipated during the switching process of the IGBT. Minimizing switching energy is vital for reducing power losses and enhancing overall efficiency. Lastly, gate charge denotes the amount of charge required to turn the IGBT on or off. Gate charge influences the switching speed and control characteristics of the device. By considering these parameters, engineers and designers can carefully select the most suitable single IGBT that aligns with the specific requirements of their application, ensuring optimal performance and reliability.