POWER MOS 7® Series, Single IGBTs

Results:
33
Manufacturer
Series
Switching Energy
Td (on/off) @ 25°C
Test Condition
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Gate Charge
Current - Collector (Ic) (Max)
Power - Max
Supplier Device Package
Package / Case
Voltage - Collector Emitter Breakdown (Max)
Operating Temperature
Reverse Recovery Time (trr)
Mounting Type
IGBT Type
Input Type
Grade
Qualification
Results remaining33
Applied Filters:
POWER MOS 7®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseVoltage - Collector Emitter Breakdown (Max)Vce(on) (Max) @ Vge, IcCurrent - Collector (Ic) (Max)Power - MaxSupplier Device PackageSeriesIGBT TypeCurrent - Collector Pulsed (Icm)Switching EnergyInput TypeGate ChargeTd (on/off) @ 25°CTest ConditionReverse Recovery Time (trr)
APT15GN120KG
IGBT 1200V 45A 195W TO220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
1200 V
2.1V @ 15V, 15A
45 A
195 W
TO-220 [K]
POWER MOS 7®
Trench Field Stop
45 A
410µJ (on), 950µJ (off)
Standard
90 nC
10ns/150ns
800V, 15A, 4.3Ohm, 15V
-
APT15GP90KG
IGBT 900V 43A 250W TO220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
900 V
3.9V @ 15V, 15A
43 A
250 W
TO-220 [K]
POWER MOS 7®
PT
60 A
200µJ (off)
Standard
60 nC
9ns/33ns
600V, 15A, 4.3Ohm, 15V
-
APT25GP120BDQ1G
IGBT 1200V 69A 417W TO247
1+
$16.4789
5+
$15.5634
10+
$14.6479
Quantity
236 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
1200 V
3.9V @ 15V, 25A
69 A
417 W
TO-247 [B]
POWER MOS 7®
PT
90 A
500µJ (on), 440µJ (off)
Standard
110 nC
12ns/70ns
600V, 25A, 5Ohm, 15V
-
APT50GP60BG
IGBT 600V 100A 625W TO247
1+
$38.0282
5+
$35.9155
10+
$33.8028
Quantity
160 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
600 V
2.7V @ 15V, 50A
100 A
625 W
TO-247 [B]
POWER MOS 7®
PT
190 A
465µJ (on), 637µJ (off)
Standard
165 nC
19ns/83ns
400V, 50A, 5Ohm, 15V
-
APT13GP120BDQ1G
IGBT 1200V 41A 250W TO247
1+
$12.6761
5+
$11.9718
10+
$11.2676
Quantity
24 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
1200 V
3.9V @ 15V, 13A
41 A
250 W
TO-247 [B]
POWER MOS 7®
PT
50 A
115µJ (on), 165µJ (off)
Standard
55 nC
9ns/28ns
600V, 13A, 5Ohm, 15V
-
APT50GP60B2DQ2G
IGBT 600V 150A 625W TMAX
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Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3 Variant
600 V
2.7V @ 15V, 50A
150 A
625 W
-
POWER MOS 7®
PT
190 A
465µJ (on), 635µJ (off)
Standard
165 nC
19ns/85ns
400V, 50A, 4.3Ohm, 15V
-
APT15GP60BG
IGBT 600V 56A 250W TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
600 V
2.7V @ 15V, 15A
56 A
250 W
TO-247 [B]
POWER MOS 7®
PT
65 A
130µJ (on), 121µJ (off)
Standard
55 nC
8ns/29ns
400V, 15A, 5Ohm, 15V
-
APT15GP60BDQ1G
IGBT 600V 56A 250W TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
600 V
2.7V @ 15V, 15A
56 A
250 W
TO-247 [B]
POWER MOS 7®
PT
65 A
130µJ (on), 120µJ (off)
Standard
55 nC
8ns/29ns
400V, 15A, 5Ohm, 15V
-
APT30GP60BDQ1G
IGBT 600V 100A 463W TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
600 V
2.7V @ 15V, 30A
100 A
463 W
TO-247 [B]
POWER MOS 7®
PT
120 A
260µJ (on), 250µJ (off)
Standard
90 nC
13ns/55ns
400V, 30A, 5Ohm, 15V
-
APT35GP120BG
IGBT 1200V 96A 543W TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
1200 V
3.9V @ 15V, 35A
96 A
543 W
TO-247 [B]
POWER MOS 7®
PT
140 A
750µJ (on), 680µJ (off)
Standard
150 nC
16ns/94ns
600V, 35A, 5Ohm, 15V
-
APT45GP120BG
IGBT 1200V 100A 625W TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
1200 V
3.9V @ 15V, 45A
100 A
625 W
TO-247 [B]
POWER MOS 7®
PT
170 A
900µJ (on), 904µJ (off)
Standard
185 nC
18ns/102ns
600V, 45A, 5Ohm, 15V
-
APT11GP60BDQBG
IGBT 600V 41A 187W TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
600 V
2.7V @ 15V, 11A
41 A
187 W
TO-247-3
POWER MOS 7®
PT
45 A
46µJ (on), 90µJ (off)
Standard
40 nC
7ns/29ns
400V, 11A, 5Ohm, 15V
-
APT13GP120KG
IGBT 1200V 41A 250W TO220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
1200 V
3.9V @ 15V, 13A
41 A
250 W
TO-220 [K]
POWER MOS 7®
PT
50 A
114µJ (on), 165µJ (off)
Standard
55 nC
9ns/28ns
600V, 13A, 5Ohm, 15V
-
APT15GP60KG
IGBT 600V 56A 250W TO220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
600 V
2.7V @ 15V, 15A
56 A
250 W
TO-220 [K]
POWER MOS 7®
PT
65 A
130µJ (on), 121µJ (off)
Standard
55 nC
8ns/29ns
400V, 15A, 5Ohm, 15V
-
APT15GP90BG
IGBT 900V 43A 250W TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-
TO-247-3
900 V
3.9V @ 15V, 15A
43 A
250 W
TO-247 [B]
POWER MOS 7®
PT
60 A
200µJ (off)
Standard
60 nC
9ns/33ns
600V, 15A, 4.3Ohm, 15V
-
APT25GP90BDQ1G
IGBT 900V 72A 417W TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
900 V
3.9V @ 15V, 25A
72 A
417 W
TO-247 [B]
POWER MOS 7®
PT
110 A
370µJ (off)
Standard
110 nC
13ns/55ns
600V, 40A, 4.3Ohm, 15V
-
APT25GP90BG
IGBT 900V 72A 417W TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
900 V
3.9V @ 15V, 25A
72 A
417 W
TO-247 [B]
POWER MOS 7®
PT
110 A
370µJ (off)
Standard
110 nC
13ns/55ns
600V, 25A, 5Ohm, 15V
-
APT35GP120B2DQ2G
IGBT 1200V 96A 543W TMAX
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3 Variant
1200 V
3.9V @ 15V, 35A
96 A
543 W
-
POWER MOS 7®
PT
140 A
750µJ (on), 680µJ (off)
Standard
150 nC
16ns/95ns
600V, 35A, 4.3Ohm, 15V
-
APT40GP60SG
IGBT 600V 100A 543W D3PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
600 V
2.7V @ 15V, 40A
100 A
543 W
D3PAK
POWER MOS 7®
PT
160 A
385µJ (on), 352µJ (off)
Standard
135 nC
20ns/64ns
400V, 40A, 5Ohm, 15V
-
APT15GP90BDQ1G
IGBT 900V 43A 250W TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
900 V
3.9V @ 15V, 15A
43 A
250 W
TO-247 [B]
POWER MOS 7®
PT
60 A
200µJ (off)
Standard
60 nC
9ns/33ns
600V, 15A, 4.3Ohm, 15V
-

About  Single IGBTs

Single Insulated-Gate Bipolar Transistors (IGBTs) are sophisticated semiconductor devices composed of multiple layers and equipped with three terminals. These devices are specifically designed to handle high currents and offer rapid switching capabilities. They are highly valued in a wide range of applications. The performance and characteristics of single IGBTs are defined by several key parameters. These parameters include the device type, collector-emitter breakdown voltage, collector current rating, pulsed collector current rating, VCE(ON), switching energy, and gate charge. The device type refers to the specific model or variant of the IGBT. Different models may possess distinct features and characteristics tailored to meet the requirements of different applications. The collector-emitter breakdown voltage represents the maximum voltage that the device can withstand across its collector and emitter terminals without experiencing a breakdown or failure. The collector current rating indicates the maximum continuous current that the IGBT can handle while maintaining proper functionality. The pulsed collector current rating specifies the maximum current that the IGBT can endure for short durations, typically in pulsed or transient conditions. VCE(ON) signifies the voltage drop across the collector-emitter junction when the IGBT is fully turned on and conducting current. This parameter is crucial for power loss calculations and efficiency analysis. Switching energy refers to the amount of energy dissipated during the switching process of the IGBT. Minimizing switching energy is vital for reducing power losses and enhancing overall efficiency. Lastly, gate charge denotes the amount of charge required to turn the IGBT on or off. Gate charge influences the switching speed and control characteristics of the device. By considering these parameters, engineers and designers can carefully select the most suitable single IGBT that aligns with the specific requirements of their application, ensuring optimal performance and reliability.