CooliRIGBT™ Series, Single IGBTs

Results:
6
Manufacturer
Series
Operating Temperature
Input Type
Test Condition
Reverse Recovery Time (trr)
Switching Energy
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Supplier Device Package
Td (on/off) @ 25°C
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Gate Charge
Power - Max
Grade
Mounting Type
Qualification
Package / Case
IGBT Type
Results remaining6
Applied Filters:
CooliRIGBT™
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ImageProduct DetailPriceAvailabilityECAD ModelOperating TemperatureMounting TypePower - MaxTest ConditionPackage / CaseInput TypeIGBT TypeSupplier Device PackageSeriesVce(on) (Max) @ Vge, IcSwitching EnergyTd (on/off) @ 25°CCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Reverse Recovery Time (trr)Gate ChargeCurrent - Collector Pulsed (Icm)
AUIRGP65A40D0
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
Through Hole
-
-
TO-247-3
-
-
TO-247AC
CooliRIGBT™
-
-
-
-
-
-
-
-
AUIRGF65G40D0
IGBT 600V 62A 625W TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-55°C ~ 175°C (TJ)
Through Hole
625 W
400V, 20A, 4.7Ohm, 15V
TO-247-3
Standard
-
TO-247AD
CooliRIGBT™
2.2V @ 15V, 20A
298µJ (on), 147µJ (off)
35ns/142ns
62 A
600 V
41 ns
270 nC
84 A
AUIRGF65G40D0
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-55°C ~ 175°C (TJ)
Through Hole
625 W
400V, 20A, 4.7Ohm, 15V
TO-247-3
Standard
-
TO-247AD
CooliRIGBT™
2.2V @ 15V, 20A
298µJ (on), 147µJ (off)
35ns/142ns
62 A
600 V
41 ns
270 nC
84 A
AUIRGF65G40D0
IGBT 600V 62A 625W TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-55°C ~ 175°C (TJ)
Through Hole
625 W
400V, 20A, 4.7Ohm, 15V
TO-247-3
Standard
-
TO-247AD
CooliRIGBT™
2.2V @ 15V, 20A
298µJ (on), 147µJ (off)
35ns/142ns
62 A
600 V
41 ns
270 nC
84 A
AUIRGP65G40D0
IGBT 600V 62A 625W TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-55°C ~ 175°C (TJ)
Through Hole
625 W
400V, 20A, 4.7Ohm, 15V
TO-247-3
Standard
-
TO-247AC
CooliRIGBT™
2.2V @ 15V, 20A
298µJ (on), 147µJ (off)
35ns/142ns
62 A
600 V
41 ns
270 nC
84 A
AUIRGF65A40D0
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
Through Hole
-
-
TO-247-3
-
-
TO-247AD
CooliRIGBT™
-
-
-
-
-
-
-
-

About  Single IGBTs

Single Insulated-Gate Bipolar Transistors (IGBTs) are sophisticated semiconductor devices composed of multiple layers and equipped with three terminals. These devices are specifically designed to handle high currents and offer rapid switching capabilities. They are highly valued in a wide range of applications. The performance and characteristics of single IGBTs are defined by several key parameters. These parameters include the device type, collector-emitter breakdown voltage, collector current rating, pulsed collector current rating, VCE(ON), switching energy, and gate charge. The device type refers to the specific model or variant of the IGBT. Different models may possess distinct features and characteristics tailored to meet the requirements of different applications. The collector-emitter breakdown voltage represents the maximum voltage that the device can withstand across its collector and emitter terminals without experiencing a breakdown or failure. The collector current rating indicates the maximum continuous current that the IGBT can handle while maintaining proper functionality. The pulsed collector current rating specifies the maximum current that the IGBT can endure for short durations, typically in pulsed or transient conditions. VCE(ON) signifies the voltage drop across the collector-emitter junction when the IGBT is fully turned on and conducting current. This parameter is crucial for power loss calculations and efficiency analysis. Switching energy refers to the amount of energy dissipated during the switching process of the IGBT. Minimizing switching energy is vital for reducing power losses and enhancing overall efficiency. Lastly, gate charge denotes the amount of charge required to turn the IGBT on or off. Gate charge influences the switching speed and control characteristics of the device. By considering these parameters, engineers and designers can carefully select the most suitable single IGBT that aligns with the specific requirements of their application, ensuring optimal performance and reliability.