BIMOSFET™ Series, Single IGBTs

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BIMOSFET™
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ImageProduct DetailPriceAvailabilityECAD ModelSeriesMounting TypeOperating TemperatureIGBT TypeSupplier Device PackagePower - MaxGradeCurrent - Collector (Ic) (Max)Package / CaseVoltage - Collector Emitter Breakdown (Max)Vce(on) (Max) @ Vge, IcSwitching EnergyInput TypeGate ChargeTd (on/off) @ 25°CTest ConditionReverse Recovery Time (trr)Current - Collector Pulsed (Icm)Qualification
IXBF9N160G
IGBT 1600V 7A 70W I4PAC
1+
$93.7500
5+
$87.5000
10+
$81.2500
Quantity
8,600 Available
Can ship immediately
PCB Symbol, Footprint & 3D Model
BIMOSFET™
Through Hole
-55°C ~ 150°C (TJ)
-
ISOPLUS i4-PAC™
70 W
-
7 A
i4-Pac™-5 (3 Leads)
1600 V
7V @ 15V, 5A
-
Standard
34 nC
-
960V, 5A, 27Ohm, 10V
-
-
-
IXBF32N300
IGBT 3000V 40A 160W ISOPLUSI4
1+
$41.6667
5+
$38.8889
10+
$36.1111
Quantity
8,575 Available
Can ship immediately
PCB Symbol, Footprint & 3D Model
BIMOSFET™
Through Hole
-55°C ~ 150°C (TJ)
-
ISOPLUS i4-PAC™
160 W
-
40 A
i4-Pac™-5 (3 Leads)
3000 V
3.2V @ 15V, 32A
-
Standard
142 nC
-
-
1.5 µs
250 A
-
IXBH5N160G
IGBT 1600V 5.7A 68W TO247AD
1+
$10.4167
5+
$9.7222
10+
$9.0278
Quantity
5,000 Available
Can ship immediately
PCB Symbol, Footprint & 3D Model
BIMOSFET™
Through Hole
-55°C ~ 150°C (TJ)
-
TO-247AD
68 W
-
5.7 A
TO-247-3
1600 V
7.2V @ 15V, 3A
-
Standard
26 nC
-
960V, 3A, 47Ohm, 10V
-
-
-
IXBH2N250
IGBT 2500V 5A 32W TO247
1+
$13.5417
5+
$12.6389
10+
$11.7361
Quantity
1,966 Available
Can ship immediately
PCB Symbol, Footprint & 3D Model
BIMOSFET™
Through Hole
-55°C ~ 150°C (TJ)
-
TO-247AD
32 W
-
5 A
TO-247-3
2500 V
3.5V @ 15V, 2A
-
Standard
10.6 nC
-
-
920 ns
13 A
-
IXBT42N300HV
IGBT 3000V 42A 357W TO268
1+
$80.2083
5+
$74.8611
10+
$69.5139
Quantity
1,832 Available
Can ship immediately
PCB Symbol, Footprint & 3D Model
BIMOSFET™
Surface Mount
-55°C ~ 150°C (TJ)
-
TO-268HV (IXBT)
500 W
-
104 A
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
3000 V
3V @ 15V, 42A
-
Standard
200 nC
72ns/445ns
1500V, 42A, 20Ohm, 15V
1.7 µs
400 A
-
IXBT42N170A
IGBT 1700V 42A 357W TO268
1+
$83.3333
5+
$77.7778
10+
$72.2222
Quantity
1,640 Available
Can ship immediately
PCB Symbol, Footprint & 3D Model
BIMOSFET™
Surface Mount
-55°C ~ 150°C (TJ)
-
TO-268AA
357 W
-
42 A
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
1700 V
6V @ 15V, 21A
3.43mJ (on), 430µJ (off)
Standard
188 nC
19ns/200ns
850V, 21A, 1Ohm, 15V
330 ns
265 A
-
IXBF12N300
IGBT 3000V 26A 125W ISOPLUSI4
1+
$79.1667
5+
$73.8889
10+
$68.6111
Quantity
1,617 Available
Can ship immediately
PCB Symbol, Footprint & 3D Model
BIMOSFET™
Through Hole
-55°C ~ 150°C (TJ)
-
ISOPLUS i4-PAC™
125 W
-
26 A
i4-Pac™-5 (3 Leads)
3000 V
3.2V @ 15V, 12A
-
Standard
62 nC
-
-
1.4 µs
98 A
-
IXBH9N160G
IGBT 1600V 9A 100W TO247AD
1+
$5.2083
5+
$4.8611
10+
$4.5139
Quantity
1,418 Available
Can ship immediately
PCB Symbol, Footprint & 3D Model
BIMOSFET™
Through Hole
-55°C ~ 150°C (TJ)
-
TO-247AD
100 W
-
9 A
TO-247-3
1600 V
7V @ 15V, 5A
-
Standard
34 nC
-
960V, 5A, 27Ohm, 10V
-
10 A
-
IXBX75N170A
IGBT 1700V 110A 1040W PLUS247
1+
$104.1667
5+
$97.2222
10+
$90.2778
Quantity
930 Available
Can ship immediately
PCB Symbol, Footprint & 3D Model
BIMOSFET™
Through Hole
-55°C ~ 150°C (TJ)
-
PLUS247™-3
1040 W
-
110 A
TO-247-3 Variant
1700 V
6V @ 15V, 42A
3.8mJ (off)
Standard
358 nC
26ns/418ns
1360V, 42A, 1Ohm, 15V
360 ns
300 A
-
IXBF55N300
DISC IGBT BIMSFT-VERYHIVOLT I4-P
1+
$121.8750
5+
$113.7500
10+
$105.6250
Quantity
750 Available
Can ship immediately
PCB Symbol, Footprint & 3D Model
BIMOSFET™
Through Hole
-55°C ~ 150°C (TJ)
-
ISOPLUS i4-PAC™
357 W
-
86 A
i4-Pac™-5 (3 Leads)
3000 V
3.2V @ 15V, 55A
-
Standard
335 nC
-
-
1.9 µs
600 A
-
IXBH12N300
IGBT 3000V 30A 160W TO247
1+
$31.2500
5+
$29.1667
10+
$27.0833
Quantity
720 Available
Can ship immediately
PCB Symbol, Footprint & 3D Model
BIMOSFET™
Through Hole
-55°C ~ 150°C (TJ)
-
TO-247AD
160 W
-
30 A
TO-247-3
3000 V
3.2V @ 15V, 12A
-
Standard
62 nC
-
-
1.4 µs
100 A
-
IXBH42N250
BIMOSFET TRANS 2500V 42A TO-247A
1+
$27.0833
5+
$25.2778
10+
$23.4722
Quantity
542 Available
Can ship immediately
PCB Symbol, Footprint & 3D Model
BIMOSFET™
Through Hole
-55°C ~ 150°C (TJ)
-
TO-247AD
500 W
-
104 A
TO-247-3
2500 V
3V @ 15V, 42A
-
Standard
200 nC
72ns/445ns
1250V, 42A, 20Ohm, 15V
1.7 µs
400 A
-
IXBK55N300
IGBT 3000V 130A 625W TO264
1+
$261.6667
5+
$244.2222
10+
$226.7778
Quantity
445 Available
Can ship immediately
PCB Symbol, Footprint & 3D Model
BIMOSFET™
Through Hole
-55°C ~ 150°C (TJ)
-
TO-264AA
625 W
-
130 A
TO-264-3, TO-264AA
3000 V
3.2V @ 15V, 55A
-
Standard
335 nC
-
-
1.9 µs
600 A
-
IXBH42N170
IGBT 1700V 80A 360W TO247
1+
$28.3333
5+
$26.4444
10+
$24.5556
Quantity
344 Available
Can ship immediately
PCB Symbol, Footprint & 3D Model
BIMOSFET™
Through Hole
-55°C ~ 150°C (TJ)
-
TO-247AD
360 W
-
80 A
TO-247-3
1700 V
2.8V @ 15V, 42A
-
Standard
188 nC
-
-
1.32 µs
300 A
-
IXBX75N170
IGBT 1700V 200A 1040W PLUS247
1+
$84.3750
5+
$78.7500
10+
$73.1250
Quantity
306 Available
Can ship immediately
PCB Symbol, Footprint & 3D Model
BIMOSFET™
Through Hole
-55°C ~ 150°C (TJ)
-
PLUS247™-3
1040 W
-
200 A
TO-247-3 Variant
1700 V
3.1V @ 15V, 75A
-
Standard
350 nC
-
-
1.5 µs
580 A
-
IXBT42N170
IGBT 1700V 80A 360W TO268
1+
$38.5417
5+
$35.9722
10+
$33.4028
Quantity
239 Available
Can ship immediately
PCB Symbol, Footprint & 3D Model
BIMOSFET™
Surface Mount
-55°C ~ 150°C (TJ)
-
TO-268AA
360 W
-
80 A
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
1700 V
2.8V @ 15V, 42A
-
Standard
188 nC
-
-
1.32 µs
300 A
-
IXBH16N170
IGBT 1700V 40A 250W TO247AD
1+
$25.0000
5+
$23.3333
10+
$21.6667
Quantity
150 Available
Can ship immediately
PCB Symbol, Footprint & 3D Model
BIMOSFET™
Through Hole
-55°C ~ 150°C (TJ)
-
TO-247AD
250 W
-
40 A
TO-247-3
1700 V
3.3V @ 15V, 16A
-
Standard
72 nC
-
-
1.32 µs
120 A
-
IXBH32N300
IGBT 3000V 80A 400W TO247
1+
$140.8333
5+
$131.4444
10+
$122.0556
Quantity
78 Available
Can ship immediately
PCB Symbol, Footprint & 3D Model
BIMOSFET™
Through Hole
-55°C ~ 150°C (TJ)
-
TO-247AD
400 W
-
80 A
TO-247-3
3000 V
3.2V @ 15V, 32A
-
Standard
142 nC
-
-
1.5 µs
280 A
-
IXBX25N250
IGBT 2500V 55A 300W PLUS247
1+
$54.4946
5+
$50.8617
10+
$47.2287
Quantity
66 Available
Can ship immediately
PCB Symbol, Footprint & 3D Model
BIMOSFET™
Through Hole
-55°C ~ 150°C (TJ)
-
PLUS247™-3
300 W
-
55 A
TO-247-3 Variant
2500 V
3.3V @ 15V, 25A
-
Standard
103 nC
-
-
1.6 µs
180 A
-
IXBF20N360
IGBT 3600V 45A ISOPLUS I4PAK
1+
$75.0000
5+
$70.0000
10+
$65.0000
Quantity
60 Available
Can ship immediately
PCB Symbol, Footprint & 3D Model
BIMOSFET™
Through Hole
-55°C ~ 150°C (TJ)
-
ISOPLUS i4-PAC™
230 W
-
45 A
i4-Pac™-5 (3 Leads)
3600 V
3.4V @ 15V, 20A
15.5mJ (on), 4.3mJ (off)
Standard
43 nC
18ns/238ns
1500V, 20A, 10Ohm, 15V
1.7 µs
220 A
-

About  Single IGBTs

Single Insulated-Gate Bipolar Transistors (IGBTs) are sophisticated semiconductor devices composed of multiple layers and equipped with three terminals. These devices are specifically designed to handle high currents and offer rapid switching capabilities. They are highly valued in a wide range of applications. The performance and characteristics of single IGBTs are defined by several key parameters. These parameters include the device type, collector-emitter breakdown voltage, collector current rating, pulsed collector current rating, VCE(ON), switching energy, and gate charge. The device type refers to the specific model or variant of the IGBT. Different models may possess distinct features and characteristics tailored to meet the requirements of different applications. The collector-emitter breakdown voltage represents the maximum voltage that the device can withstand across its collector and emitter terminals without experiencing a breakdown or failure. The collector current rating indicates the maximum continuous current that the IGBT can handle while maintaining proper functionality. The pulsed collector current rating specifies the maximum current that the IGBT can endure for short durations, typically in pulsed or transient conditions. VCE(ON) signifies the voltage drop across the collector-emitter junction when the IGBT is fully turned on and conducting current. This parameter is crucial for power loss calculations and efficiency analysis. Switching energy refers to the amount of energy dissipated during the switching process of the IGBT. Minimizing switching energy is vital for reducing power losses and enhancing overall efficiency. Lastly, gate charge denotes the amount of charge required to turn the IGBT on or off. Gate charge influences the switching speed and control characteristics of the device. By considering these parameters, engineers and designers can carefully select the most suitable single IGBT that aligns with the specific requirements of their application, ensuring optimal performance and reliability.