BIMOSFET™ Series, Single IGBTs

Results:
68
Manufacturer
Series
Current - Collector (Ic) (Max)
Vce(on) (Max) @ Vge, Ic
Current - Collector Pulsed (Icm)
Gate Charge
Power - Max
Test Condition
Td (on/off) @ 25°C
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Package / Case
Voltage - Collector Emitter Breakdown (Max)
Operating Temperature
Mounting Type
IGBT Type
Input Type
Grade
Qualification
Results remaining68
Applied Filters:
BIMOSFET™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureSeriesIGBT TypeSupplier Device PackagePower - MaxGradeCurrent - Collector (Ic) (Max)Package / CaseVoltage - Collector Emitter Breakdown (Max)Vce(on) (Max) @ Vge, IcSwitching EnergyInput TypeGate ChargeTd (on/off) @ 25°CTest ConditionReverse Recovery Time (trr)Current - Collector Pulsed (Icm)Qualification
IXBF9N160G
IGBT 1600V 7A 70W I4PAC
1+
$114.0845
5+
$107.7465
10+
$101.4085
Quantity
8,600 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
BIMOSFET™
-
ISOPLUS i4-PAC™
70 W
-
7 A
i4-Pac™-5 (3 Leads)
1600 V
7V @ 15V, 5A
-
Standard
34 nC
-
960V, 5A, 27Ohm, 10V
-
-
-
IXBF32N300
IGBT 3000V 40A 160W ISOPLUSI4
1+
$50.7042
5+
$47.8873
10+
$45.0704
Quantity
8,575 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
BIMOSFET™
-
ISOPLUS i4-PAC™
160 W
-
40 A
i4-Pac™-5 (3 Leads)
3000 V
3.2V @ 15V, 32A
-
Standard
142 nC
-
-
1.5 µs
250 A
-
IXBH5N160G
IGBT 1600V 5.7A 68W TO247AD
1+
$12.6761
5+
$11.9718
10+
$11.2676
Quantity
5,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
BIMOSFET™
-
TO-247AD
68 W
-
5.7 A
TO-247-3
1600 V
7.2V @ 15V, 3A
-
Standard
26 nC
-
960V, 3A, 47Ohm, 10V
-
-
-
IXBH2N250
IGBT 2500V 5A 32W TO247
1+
$16.4789
5+
$15.5634
10+
$14.6479
Quantity
1,966 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
BIMOSFET™
-
TO-247AD
32 W
-
5 A
TO-247-3
2500 V
3.5V @ 15V, 2A
-
Standard
10.6 nC
-
-
920 ns
13 A
-
IXBT42N170A
IGBT 1700V 42A 357W TO268
1+
$101.4085
5+
$95.7746
10+
$90.1408
Quantity
1,640 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
BIMOSFET™
-
TO-268AA
357 W
-
42 A
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
1700 V
6V @ 15V, 21A
3.43mJ (on), 430µJ (off)
Standard
188 nC
19ns/200ns
850V, 21A, 1Ohm, 15V
330 ns
265 A
-
IXBH9N160G
IGBT 1600V 9A 100W TO247AD
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
1,418 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
BIMOSFET™
-
TO-247AD
100 W
-
9 A
TO-247-3
1600 V
7V @ 15V, 5A
-
Standard
34 nC
-
960V, 5A, 27Ohm, 10V
-
10 A
-
IXBX75N170A
IGBT 1700V 110A 1040W PLUS247
1+
$126.7606
5+
$119.7183
10+
$112.6761
Quantity
930 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
BIMOSFET™
-
PLUS247™-3
1040 W
-
110 A
TO-247-3 Variant
1700 V
6V @ 15V, 42A
3.8mJ (off)
Standard
358 nC
26ns/418ns
1360V, 42A, 1Ohm, 15V
360 ns
300 A
-
IXBT42N300HV
IGBT 3000V 42A 357W TO268
1+
$97.3521
5+
$91.9437
10+
$86.5352
Quantity
750 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
BIMOSFET™
-
TO-268HV (IXBT)
500 W
-
104 A
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
3000 V
3V @ 15V, 42A
-
Standard
200 nC
72ns/445ns
1500V, 42A, 20Ohm, 15V
1.7 µs
400 A
-
IXBF55N300
DISC IGBT BIMSFT-VERYHIVOLT I4-P
1+
$148.3099
5+
$140.0704
10+
$131.8310
Quantity
750 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
BIMOSFET™
-
ISOPLUS i4-PAC™
357 W
-
86 A
i4-Pac™-5 (3 Leads)
3000 V
3.2V @ 15V, 55A
-
Standard
335 nC
-
-
1.9 µs
600 A
-
IXBH12N300
IGBT 3000V 30A 160W TO247
1+
$38.0282
5+
$35.9155
10+
$33.8028
Quantity
720 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
BIMOSFET™
-
TO-247AD
160 W
-
30 A
TO-247-3
3000 V
3.2V @ 15V, 12A
-
Standard
62 nC
-
-
1.4 µs
100 A
-
IXBK55N300
IGBT 3000V 130A 625W TO264
1+
$318.4225
5+
$300.7324
10+
$283.0423
Quantity
445 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
BIMOSFET™
-
TO-264AA
625 W
-
130 A
TO-264-3, TO-264AA
3000 V
3.2V @ 15V, 55A
-
Standard
335 nC
-
-
1.9 µs
600 A
-
IXBH42N170
IGBT 1700V 80A 360W TO247
1+
$34.4789
5+
$32.5634
10+
$30.6479
Quantity
344 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
BIMOSFET™
-
TO-247AD
360 W
-
80 A
TO-247-3
1700 V
2.8V @ 15V, 42A
-
Standard
188 nC
-
-
1.32 µs
300 A
-
IXBX75N170
IGBT 1700V 200A 1040W PLUS247
1+
$102.6761
5+
$96.9718
10+
$91.2676
Quantity
306 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
BIMOSFET™
-
PLUS247™-3
1040 W
-
200 A
TO-247-3 Variant
1700 V
3.1V @ 15V, 75A
-
Standard
350 nC
-
-
1.5 µs
580 A
-
IXBH16N170
IGBT 1700V 40A 250W TO247AD
1+
$30.4225
5+
$28.7324
10+
$27.0423
Quantity
150 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
BIMOSFET™
-
TO-247AD
250 W
-
40 A
TO-247-3
1700 V
3.3V @ 15V, 16A
-
Standard
72 nC
-
-
1.32 µs
120 A
-
IXBH32N300
IGBT 3000V 80A 400W TO247
1+
$171.3803
5+
$161.8592
10+
$152.3380
Quantity
78 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
BIMOSFET™
-
TO-247AD
400 W
-
80 A
TO-247-3
3000 V
3.2V @ 15V, 32A
-
Standard
142 nC
-
-
1.5 µs
280 A
-
IXBF20N360
IGBT 3600V 45A ISOPLUS I4PAK
1+
$91.2676
5+
$86.1972
10+
$81.1268
Quantity
60 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
BIMOSFET™
-
ISOPLUS i4-PAC™
230 W
-
45 A
i4-Pac™-5 (3 Leads)
3600 V
3.4V @ 15V, 20A
15.5mJ (on), 4.3mJ (off)
Standard
43 nC
18ns/238ns
1500V, 20A, 10Ohm, 15V
1.7 µs
220 A
-
IXBF40N160
IGBT 1600V 28A 250W I4PAC
1+
$31.9437
5+
$30.1690
10+
$28.3944
Quantity
46 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
BIMOSFET™
-
ISOPLUS i4-PAC™
250 W
-
28 A
i4-Pac™-5 (3 Leads)
1600 V
7.1V @ 15V, 20A
-
Standard
130 nC
-
960V, 25A, 22Ohm, 15V
-
-
-
IXBH16N170A
IGBT 1700V 16A 150W TO247AD
1+
$20.2817
5+
$19.1549
10+
$18.0282
Quantity
37 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
BIMOSFET™
-
TO-247AD
150 W
-
16 A
TO-247-3
1700 V
6V @ 15V, 10A
1.2mJ (off)
Standard
65 nC
15ns/160ns
1360V, 10A, 10Ohm, 15V
360 ns
40 A
-
IXBA14N300HV
REVERSE CONDUCTING IGBT
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
BIMOSFET™
NPT
TO-263
200 W
-
38 A
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
3000 V
2.7V @ 15V, 14A
-
Standard
62 nC
40ns/166ns
960V, 14A, 20Ohm, 15V
1.4 µs
120 A
-
IXBX55N300
IGBT 3000V 130A 625W PLUS247
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
BIMOSFET™
-
PLUS247™-3
625 W
-
130 A
TO-247-3 Variant
3000 V
3.2V @ 15V, 55A
-
Standard
335 nC
-
-
1.9 µs
600 A
-

About  Single IGBTs

Single Insulated-Gate Bipolar Transistors (IGBTs) are sophisticated semiconductor devices composed of multiple layers and equipped with three terminals. These devices are specifically designed to handle high currents and offer rapid switching capabilities. They are highly valued in a wide range of applications. The performance and characteristics of single IGBTs are defined by several key parameters. These parameters include the device type, collector-emitter breakdown voltage, collector current rating, pulsed collector current rating, VCE(ON), switching energy, and gate charge. The device type refers to the specific model or variant of the IGBT. Different models may possess distinct features and characteristics tailored to meet the requirements of different applications. The collector-emitter breakdown voltage represents the maximum voltage that the device can withstand across its collector and emitter terminals without experiencing a breakdown or failure. The collector current rating indicates the maximum continuous current that the IGBT can handle while maintaining proper functionality. The pulsed collector current rating specifies the maximum current that the IGBT can endure for short durations, typically in pulsed or transient conditions. VCE(ON) signifies the voltage drop across the collector-emitter junction when the IGBT is fully turned on and conducting current. This parameter is crucial for power loss calculations and efficiency analysis. Switching energy refers to the amount of energy dissipated during the switching process of the IGBT. Minimizing switching energy is vital for reducing power losses and enhancing overall efficiency. Lastly, gate charge denotes the amount of charge required to turn the IGBT on or off. Gate charge influences the switching speed and control characteristics of the device. By considering these parameters, engineers and designers can carefully select the most suitable single IGBT that aligns with the specific requirements of their application, ensuring optimal performance and reliability.