GenX3™ Series, Single IGBTs

Results:
136
Manufacturer
Series
Switching Energy
Vce(on) (Max) @ Vge, Ic
Td (on/off) @ 25°C
Gate Charge
Test Condition
Current - Collector Pulsed (Icm)
Current - Collector (Ic) (Max)
Power - Max
Reverse Recovery Time (trr)
Supplier Device Package
Package / Case
Voltage - Collector Emitter Breakdown (Max)
Operating Temperature
Mounting Type
IGBT Type
Input Type
Grade
Qualification
Results remaining136
Applied Filters:
GenX3™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseIGBT TypeVoltage - Collector Emitter Breakdown (Max)Power - MaxReverse Recovery Time (trr)Supplier Device PackageSeriesCurrent - Collector (Ic) (Max)Current - Collector Pulsed (Icm)Vce(on) (Max) @ Vge, IcSwitching EnergyInput TypeGate ChargeTd (on/off) @ 25°CTest Condition
IXGA28N60A3
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PT
600 V
190 W
26 ns
TO-263AA
GenX3™
75 A
170 A
1.4V @ 15V, 24A
700µJ (on), 2.4mJ (off)
Standard
66 nC
18ns/300ns
480V, 24A, 10Ohm, 15V
IXGA30N60C3D4
IGBT 600V 60A 220W TO263
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PT
600 V
220 W
60 ns
TO-263AA
GenX3™
60 A
150 A
3V @ 15V, 20A
270µJ (on), 90µJ (off)
Standard
38 nC
16ns/42ns
300V, 20A, 5Ohm, 15V
IXGH64N60A3
IGBT 600V 460W TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
PT
600 V
460 W
-
TO-247AD
GenX3™
-
400 A
1.35V @ 15V, 50A
1.42mJ (on), 3.28mJ (off)
Standard
167 nC
26ns/268ns
480V, 50A, 3Ohm, 15V
IXGT20N140C3H1
IGBT 1400V 42A 250W TO268
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
PT
1400 V
250 W
70 ns
TO-268AA
GenX3™
42 A
108 A
5V @ 15V, 20A
1.35mJ (on), 440µJ (off)
Standard
88 nC
19ns/110ns
700V, 20A, 5Ohm, 15V
IXGX64N60B3D1
IGBT 600V 460W PLUS247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-
TO-247-3 Variant
PT
600 V
460 W
35 ns
PLUS247™-3
GenX3™
-
400 A
1.8V @ 15V, 50A
1.5mJ (on), 1mJ (off)
Standard
168 nC
25ns/138ns
480V, 50A, 3Ohm, 15V
IXGH28N60A3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
PT
600 V
190 W
26 ns
TO-247AD
GenX3™
75 A
170 A
1.4V @ 15V, 24A
700µJ (on), 2.4mJ (off)
Standard
66 nC
18ns/300ns
480V, 24A, 10Ohm, 15V
IXGH56N60B3
DISC IGBT PT-MID FREQUENCY TO-24
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
PT
600 V
330 W
41 ns
TO-247 (IXTH)
GenX3™
130 A
350 A
1.8V @ 15V, 44A
1.3mJ (on), 1.05mJ (off)
Standard
138 nC
26ns/155ns
480V, 44A, 5Ohm, 15V
IXGL200N60B3
IGBT 600V 150A 400W ISOPLUS264
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-264-3, TO-264AA
PT
600 V
400 W
-
ISOPLUS264™
GenX3™
150 A
600 A
1.5V @ 15V, 100A
1.6mJ (on), 2.9mJ (off)
Standard
750 nC
44ns/310ns
300V, 100A, 1Ohm, 15V
IXGP30N60C3C1
IGBT 600V 60A 220W TO220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
PT
600 V
220 W
-
TO-220-3
GenX3™
60 A
150 A
3V @ 15V, 20A
120µJ (on), 90µJ (off)
Standard
38 nC
17ns/42ns
300V, 20A, 5Ohm, 15V
IXGB200N60B3
IGBT 600V 75A 1250W PLUS264
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-264-3, TO-264AA
PT
600 V
1250 W
-
PLUS264™
GenX3™
75 A
600 A
1.5V @ 15V, 100A
1.6mJ (on), 2.9mJ (off)
Standard
750 nC
44ns/310ns
300V, 100A, 1Ohm, 15V
IXGT72N60B3
IGBT 600V 75A 540W TO268
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
PT
600 V
540 W
-
TO-268AA
GenX3™
75 A
400 A
1.8V @ 15V, 60A
1.38mJ (on), 1.05mJ (off)
Standard
230 nC
31ns/150ns
480V, 50A, 3Ohm, 15V
IXGX72N60A3H1
IGBT 600V 75A 540W PLUS247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3 Variant
PT
600 V
540 W
140 ns
PLUS247™-3
GenX3™
75 A
400 A
1.35V @ 15V, 60A
1.4mJ (on), 3.5mJ (off)
Standard
230 nC
31ns/320ns
480V, 50A, 3Ohm, 15V
IXGH48N60B3D1
IGBT 600V 300W TO247
1+
¥2.1549
5+
¥2.0352
10+
¥1.9155
Quantity
13,932 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
PT
600 V
300 W
100 ns
TO-247AD
GenX3™
-
280 A
1.8V @ 15V, 32A
840µJ (on), 660µJ (off)
Standard
115 nC
22ns/130ns
480V, 30A, 5Ohm, 15V
IXGP36N60A3
1+
¥2.9662
5+
¥2.8014
10+
¥2.6366
Quantity
8,950 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
PT
600 V
220 W
23 ns
TO-220-3
GenX3™
-
200 A
1.4V @ 15V, 30A
740µJ (on), 3mJ (off)
Standard
80 nC
18ns/330ns
400V, 30A, 5Ohm, 15V
IXGH48N60C3D1
IGBT 600V 75A 300W TO247AD
1+
¥6.3380
5+
¥5.9859
10+
¥5.6338
Quantity
2,965 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
PT
600 V
300 W
25 ns
TO-247AD
GenX3™
75 A
250 A
2.5V @ 15V, 30A
410µJ (on), 230µJ (off)
Standard
77 nC
19ns/60ns
400V, 30A, 3Ohm, 15V
IXGA20N120A3
IGBT 1200V 40A 180W TO263
1+
¥7.0986
5+
¥6.7042
10+
¥6.3099
Quantity
2,400 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PT
1200 V
180 W
-
TO-263AA
GenX3™
40 A
120 A
2.5V @ 15V, 20A
2.85mJ (on), 6.47mJ (off)
Standard
50 nC
16ns/290ns
960V, 20A, 10Ohm, 15V
IXGA20N120B3
IGBT 1200V 36A 180W TO263
1+
¥12.6761
5+
¥11.9718
10+
¥11.2676
Quantity
1,080 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PT
1200 V
180 W
-
TO-263AA
GenX3™
36 A
80 A
3.1V @ 15V, 16A
920µJ (on), 560µJ (off)
Standard
51 nC
16ns/150ns
600V, 16A, 15Ohm, 15V
IXGH12N120A3
IGBT 1200V 22A 100W TO247
1+
¥10.1408
5+
¥9.5775
10+
¥9.0141
Quantity
750 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
PT
1200 V
100 W
-
TO-247AD
GenX3™
22 A
60 A
3V @ 15V, 12A
-
Standard
20.4 nC
-
-
IXGK120N120A3
IGBT 1200V 240A 830W TO264
1+
¥101.4085
5+
¥95.7746
10+
¥90.1408
Quantity
508 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-264-3, TO-264AA
PT
1200 V
830 W
-
TO-264 (IXGK)
GenX3™
240 A
600 A
2.2V @ 15V, 100A
10mJ (on), 33mJ (off)
Standard
420 nC
40ns/490ns
960V, 100A, 1Ohm, 15V
IXGH48N60C3C1
IGBT 600V 75A 300W TO247
1+
¥76.0563
5+
¥71.8310
10+
¥67.6056
Quantity
300 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
PT
600 V
300 W
-
TO-247AD
GenX3™
75 A
250 A
2.5V @ 15V, 30A
330µJ (on), 230µJ (off)
Standard
77 nC
19ns/60ns
400V, 30A, 3Ohm, 15V

About  Single IGBTs

Single Insulated-Gate Bipolar Transistors (IGBTs) are sophisticated semiconductor devices composed of multiple layers and equipped with three terminals. These devices are specifically designed to handle high currents and offer rapid switching capabilities. They are highly valued in a wide range of applications. The performance and characteristics of single IGBTs are defined by several key parameters. These parameters include the device type, collector-emitter breakdown voltage, collector current rating, pulsed collector current rating, VCE(ON), switching energy, and gate charge. The device type refers to the specific model or variant of the IGBT. Different models may possess distinct features and characteristics tailored to meet the requirements of different applications. The collector-emitter breakdown voltage represents the maximum voltage that the device can withstand across its collector and emitter terminals without experiencing a breakdown or failure. The collector current rating indicates the maximum continuous current that the IGBT can handle while maintaining proper functionality. The pulsed collector current rating specifies the maximum current that the IGBT can endure for short durations, typically in pulsed or transient conditions. VCE(ON) signifies the voltage drop across the collector-emitter junction when the IGBT is fully turned on and conducting current. This parameter is crucial for power loss calculations and efficiency analysis. Switching energy refers to the amount of energy dissipated during the switching process of the IGBT. Minimizing switching energy is vital for reducing power losses and enhancing overall efficiency. Lastly, gate charge denotes the amount of charge required to turn the IGBT on or off. Gate charge influences the switching speed and control characteristics of the device. By considering these parameters, engineers and designers can carefully select the most suitable single IGBT that aligns with the specific requirements of their application, ensuring optimal performance and reliability.