HB2 Series, Single IGBTs

Results:
17
Manufacturer
Series
Switching Energy
Td (on/off) @ 25°C
Test Condition
Power - Max
Reverse Recovery Time (trr)
Vce(on) (Max) @ Vge, Ic
Current - Collector (Ic) (Max)
Supplier Device Package
Current - Collector Pulsed (Icm)
Package / Case
Gate Charge
Mounting Type
Operating Temperature
Input Type
Grade
Voltage - Collector Emitter Breakdown (Max)
Qualification
IGBT Type
Results remaining17
Applied Filters:
HB2
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseOperating TemperatureGradeVoltage - Collector Emitter Breakdown (Max)SeriesSupplier Device PackageIGBT TypeCurrent - Collector (Ic) (Max)Current - Collector Pulsed (Icm)Vce(on) (Max) @ Vge, IcPower - MaxSwitching EnergyInput TypeGate ChargeTd (on/off) @ 25°CTest ConditionReverse Recovery Time (trr)Qualification
STGWA75H65DFB2
TRENCH GATE FIELD-STOP, 650 V, 7
1+
$1.7746
5+
$1.6761
10+
$1.5775
Quantity
8,400 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
-55°C ~ 175°C (TJ)
-
650 V
HB2
TO-247 Long Leads
Trench Field Stop
115 A
225 A
2V @ 15V, 75A
357 W
1.428mJ (on), 1.05mJ (off)
Standard
207 nC
28ns/100ns
400V, 75A, 2.2Ohm, 15V
88 ns
-
STGWA40HP65FB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
-55°C ~ 175°C (TJ)
-
650 V
HB2
TO-247 Long Leads
Trench Field Stop
72 A
120 A
2V @ 15V, 40A
230 W
410µJ (off)
Standard
153 nC
-/125ns
400V, 40A, 4.7Ohm, 15V
140 ns
-
STGB30H65DFB2
TRENCH GATE FIELD-STOP 650 V, 30
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
-55°C ~ 175°C (TJ)
-
650 V
HB2
D2PAK-3
Trench Field Stop
50 A
90 A
2.1V @ 15V, 30A
167 W
270µJ (on), 310µJ (off)
Standard
90 nC
18.4ns/71ns
400V, 30A, 6.8Ohm, 15V
115 ns
-
STGF20H65DFB2
TRENCH GATE FIELD-STOP 650 V, 20
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3 Full Pack
-55°C ~ 175°C (TJ)
-
650 V
HB2
TO-220FP
Trench Field Stop
40 A
60 A
2.1V @ 15V, 20A
45 W
265µJ (on), 214µJ (off)
Standard
56 nC
16ns/78.8ns
400V, 20A, 10Ohm, 15V
215 ns
-
STGWA20HP65FB2
TRENCH GATE FIELD-STOP 650 V, 20
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
-55°C ~ 175°C (TJ)
-
650 V
HB2
TO-247 Long Leads
Trench Field Stop
40 A
60 A
2.1V @ 15V, 20A
147 W
214µJ (off)
Standard
56 nC
-/78.8ns
400V, 20A, 10Ohm, 15V
140 ns
-
STGWA50HP65FB2
TRENCH GATE FIELD-STOP, 650 V, 5
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
-55°C ~ 175°C (TJ)
-
650 V
HB2
TO-247 Long Leads
Trench Field Stop
86 A
150 A
2V @ 15V, 50A
272 W
580µJ (off)
Standard
151 nC
-/115ns
400V, 50A, 4.7Ohm, 15V
140 ns
-
STGWA30HP65FB2
TRENCH GATE FIELD-STOP 650 V, 30
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
-55°C ~ 175°C (TJ)
-
650 V
HB2
TO-247 Long Leads
Trench Field Stop
50 A
90 A
2.1V @ 15V, 30A
167 W
-
Standard
90 nC
-/71ns
400V, 30A, 6.8Ohm, 15V
140 ns
-
STGWA100H65DFB2
TRENCH GATE FIELD-STOP, 650 V, 1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
-55°C ~ 175°C (TJ)
-
650 V
HB2
TO-247 Long Leads
Trench Field Stop
145 A
300 A
2V @ 15V, 100A
441 W
2.2mJ (on), 1.4mJ (off)
Standard
288 nC
30ns/130ns
400V, 100A, 2.2Ohm, 15V
123 ns
-
STGB20H65DFB2
TRENCH GATE FIELD-STOP 650 V, 20
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
-55°C ~ 175°C (TJ)
-
650 V
HB2
D2PAK-3
Trench Field Stop
40 A
60 A
2.1V @ 15V, 20A
147 W
265µJ (on), 214µJ (off)
Standard
56 nC
16ns/78.8ns
400V, 20A, 10Ohm, 15V
215 ns
-
STGP20H65FB2
IGBT 600V 40A 167W TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
-55°C ~ 175°C (TJ)
-
650 V
HB2
TO-220
Trench Field Stop
40 A
60 A
2.1V @ 15V, 20A
147 W
265µJ (on), 214µJ (off)
Standard
56 nC
16ns/78.8ns
400V, 20A, 10Ohm, 15V
-
-
STGB20H65FB2
IGBT 600V 40A 167W D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-55°C ~ 175°C (TJ)
-
650 V
HB2
TO-263 (D2Pak)
Trench Field Stop
40 A
60 A
2.1V @ 15V, 20A
147 W
265µJ (on), 214µJ (off)
Standard
56 nC
16ns/78.8ns
400V, 20A, 10Ohm, 15V
-
-
STGP30H65DFB2
IGBT 600V 60A 258W TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
-55°C ~ 175°C (TJ)
-
650 V
HB2
TO-220
Trench Field Stop
50 A
90 A
2.1V @ 15V, 30A
167 W
270µJ (on), 310µJ (off)
Standard
90 nC
18.4ns/71ns
400V, 30A, 6.8Ohm, 15V
115 ns
-
STGWA20H65DFB2
TRENCH GATE FIELD-STOP 650 V, 20
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
-55°C ~ 175°C (TJ)
-
650 V
HB2
TO-247 Long Leads
Trench Field Stop
40 A
60 A
2.1V @ 15V, 20A
147 W
265µJ (on), 214µJ (off)
Standard
56 nC
16ns/78.8ns
400V, 20A, 10Ohm, 15V
215 ns
-
STGWA40HP65FB2
TRENCH GATE FIELD-STOP, 650 V, 4
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
-55°C ~ 175°C (TJ)
-
650 V
HB2
TO-247 Long Leads
Trench Field Stop
72 A
120 A
2V @ 15V, 40A
227 W
410µJ (off)
Standard
153 nC
-/125ns
400V, 40A, 4.7Ohm, 15V
140 ns
-
STGW50H65DFB2-4
TRENCH GATE FIELD-STOP, 650 V, 5
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-4
-55°C ~ 175°C (TJ)
-
650 V
HB2
TO-247-4
Trench Field Stop
86 A
150 A
2V @ 15V, 50A
272 W
629µJ (on), 478µJ (off)
Standard
151 nC
18ns/128ns
400V, 50A, 12Ohm, 15V
92 ns
-
STGW75H65DFB2-4
TRENCH GATE FIELD-STOP, 650 V, 7
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-4
-55°C ~ 175°C (TJ)
-
650 V
HB2
TO-247-4
Trench Field Stop
115 A
225 A
2V @ 15V, 75A
357 W
992µJ (on), 766µJ (off)
Standard
207 nC
22ns/121ns
400V, 75A, 10Ohm, 15V
88 ns
-
STGW100H65FB2-4
TRENCH GATE FIELD-STOP, 650 V, 1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-4
-55°C ~ 175°C (TJ)
-
650 V
HB2
TO-247-4
Trench Field Stop
145 A
300 A
1.8V @ 15V, 100A
441 W
1.06mJ (on), 1.14mJ (off)
Standard
288 nC
23ns/141ns
400V, 100A, 3.3Ohm, 15V
-
-

About  Single IGBTs

Single Insulated-Gate Bipolar Transistors (IGBTs) are sophisticated semiconductor devices composed of multiple layers and equipped with three terminals. These devices are specifically designed to handle high currents and offer rapid switching capabilities. They are highly valued in a wide range of applications. The performance and characteristics of single IGBTs are defined by several key parameters. These parameters include the device type, collector-emitter breakdown voltage, collector current rating, pulsed collector current rating, VCE(ON), switching energy, and gate charge. The device type refers to the specific model or variant of the IGBT. Different models may possess distinct features and characteristics tailored to meet the requirements of different applications. The collector-emitter breakdown voltage represents the maximum voltage that the device can withstand across its collector and emitter terminals without experiencing a breakdown or failure. The collector current rating indicates the maximum continuous current that the IGBT can handle while maintaining proper functionality. The pulsed collector current rating specifies the maximum current that the IGBT can endure for short durations, typically in pulsed or transient conditions. VCE(ON) signifies the voltage drop across the collector-emitter junction when the IGBT is fully turned on and conducting current. This parameter is crucial for power loss calculations and efficiency analysis. Switching energy refers to the amount of energy dissipated during the switching process of the IGBT. Minimizing switching energy is vital for reducing power losses and enhancing overall efficiency. Lastly, gate charge denotes the amount of charge required to turn the IGBT on or off. Gate charge influences the switching speed and control characteristics of the device. By considering these parameters, engineers and designers can carefully select the most suitable single IGBT that aligns with the specific requirements of their application, ensuring optimal performance and reliability.