Lightspeed™ Series, Single IGBTs

Results:
6
Manufacturer
Series
Supplier Device Package
Package / Case
Gate Charge
Switching Energy
Vce(on) (Max) @ Vge, Ic
Power - Max
Test Condition
Current - Collector (Ic) (Max)
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
Td (on/off) @ 25°C
Current - Collector Pulsed (Icm)
Operating Temperature
Input Type
Reverse Recovery Time (trr)
Grade
Qualification
IGBT Type
Results remaining6
Applied Filters:
Lightspeed™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseSupplier Device PackageIGBT TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power - MaxGradeSeriesCurrent - Collector Pulsed (Icm)Vce(on) (Max) @ Vge, IcSwitching EnergyInput TypeGate ChargeTd (on/off) @ 25°CTest ConditionReverse Recovery Time (trr)Qualification
IXGH15N120C
IGBT 1200V 30A 150W TO247AD
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247AD
-
1200 V
30 A
150 W
-
Lightspeed™
60 A
3.8V @ 15V, 15A
1.05mJ (off)
Standard
69 nC
25ns/150ns
960V, 15A, 10Ohm, 15V
-
-
IXGP15N100C
IGBT 1000V 30A 150W TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
-
1000 V
30 A
150 W
-
Lightspeed™
60 A
3.5V @ 15V, 15A
850µJ (off)
Standard
73 nC
25ns/150ns
960V, 15A, 10Ohm, 15V
-
-
IXGP15N120C
IGBT 1200V 30A 200W TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
-
1200 V
30 A
200 W
-
Lightspeed™
60 A
3.8V @ 15V, 15A
1.05mJ (off)
Standard
86 nC
25ns/150ns
960V, 15A, 10Ohm, 15V
-
-
IXGT15N120C
IGBT 1200V 30A 150W TO268
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
-
1200 V
30 A
150 W
-
Lightspeed™
60 A
3.8V @ 15V, 15A
1.05mJ (off)
Standard
69 nC
25ns/150ns
960V, 15A, 10Ohm, 15V
-
-
IXGH35N120C
IGBT 1200V 70A 300W TO247AD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247AD
-
1200 V
70 A
300 W
-
Lightspeed™
140 A
4V @ 15V, 35A
3mJ (off)
Standard
170 nC
50ns/150ns
960V, 35A, 5Ohm, 15V
-
-
IXGA15N100C
IGBT 1000V 30A 150W TO263AA
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
-
1000 V
30 A
150 W
-
Lightspeed™
60 A
3.5V @ 15V, 15A
850µJ (off)
Standard
73 nC
25ns/150ns
960V, 15A, 10Ohm, 15V
-
-

About  Single IGBTs

Single Insulated-Gate Bipolar Transistors (IGBTs) are sophisticated semiconductor devices composed of multiple layers and equipped with three terminals. These devices are specifically designed to handle high currents and offer rapid switching capabilities. They are highly valued in a wide range of applications. The performance and characteristics of single IGBTs are defined by several key parameters. These parameters include the device type, collector-emitter breakdown voltage, collector current rating, pulsed collector current rating, VCE(ON), switching energy, and gate charge. The device type refers to the specific model or variant of the IGBT. Different models may possess distinct features and characteristics tailored to meet the requirements of different applications. The collector-emitter breakdown voltage represents the maximum voltage that the device can withstand across its collector and emitter terminals without experiencing a breakdown or failure. The collector current rating indicates the maximum continuous current that the IGBT can handle while maintaining proper functionality. The pulsed collector current rating specifies the maximum current that the IGBT can endure for short durations, typically in pulsed or transient conditions. VCE(ON) signifies the voltage drop across the collector-emitter junction when the IGBT is fully turned on and conducting current. This parameter is crucial for power loss calculations and efficiency analysis. Switching energy refers to the amount of energy dissipated during the switching process of the IGBT. Minimizing switching energy is vital for reducing power losses and enhancing overall efficiency. Lastly, gate charge denotes the amount of charge required to turn the IGBT on or off. Gate charge influences the switching speed and control characteristics of the device. By considering these parameters, engineers and designers can carefully select the most suitable single IGBT that aligns with the specific requirements of their application, ensuring optimal performance and reliability.