XPT™, GenX5™ Series, Single IGBTs

Results:
3
Manufacturer
Series
Test Condition
Switching Energy
Current - Collector (Ic) (Max)
Td (on/off) @ 25°C
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Gate Charge
Power - Max
Supplier Device Package
Package / Case
Operating Temperature
Input Type
Reverse Recovery Time (trr)
Grade
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
Qualification
IGBT Type
Results remaining3
Applied Filters:
XPT™, GenX5™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseIGBT TypeOperating TemperatureGradeVoltage - Collector Emitter Breakdown (Max)SeriesCurrent - Collector (Ic) (Max)Current - Collector Pulsed (Icm)Vce(on) (Max) @ Vge, IcPower - MaxSwitching EnergyInput TypeGate ChargeTd (on/off) @ 25°CTest ConditionSupplier Device PackageReverse Recovery Time (trr)Qualification
IXYP60N65A5
IGBT 650V 60A X5 XPT TO-220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
PT
-55°C ~ 175°C (TJ)
-
650 V
XPT™, GenX5™
134 A
260 A
1.35V @ 15V, 36A
395 W
600µJ (on), 1.45mJ (off)
Standard
128 nC
28ns/230ns
400V, 36A, 5Ohm, 15V
TO-220 (IXYP)
-
-
IXYH120N65A5
IGBT 650V 120A X5 XPT TO-247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PT
-55°C ~ 175°C (TJ)
-
650 V
XPT™, GenX5™
290 A
790 A
1.35V @ 15V, 75A
830 W
1.25mJ (on), 3.2mJ (off)
Standard
314 nC
45ns/370ns
400V, 60A, 3Ohm, 15V
TO-247 (IXTH)
-
-
IXYH90N65A5
IGBT 650V 90A X5 XPT TO-247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PT
-55°C ~ 175°C (TJ)
-
650 V
XPT™, GenX5™
220 A
600 A
1.35V @ 15V, 60A
650 W
1.3mJ (on), 3.4mJ (off)
Standard
260 nC
40ns/420ns
400V, 50A, 5Ohm, 15V
TO-247 (IXTH)
-
-

About  Single IGBTs

Single Insulated-Gate Bipolar Transistors (IGBTs) are sophisticated semiconductor devices composed of multiple layers and equipped with three terminals. These devices are specifically designed to handle high currents and offer rapid switching capabilities. They are highly valued in a wide range of applications. The performance and characteristics of single IGBTs are defined by several key parameters. These parameters include the device type, collector-emitter breakdown voltage, collector current rating, pulsed collector current rating, VCE(ON), switching energy, and gate charge. The device type refers to the specific model or variant of the IGBT. Different models may possess distinct features and characteristics tailored to meet the requirements of different applications. The collector-emitter breakdown voltage represents the maximum voltage that the device can withstand across its collector and emitter terminals without experiencing a breakdown or failure. The collector current rating indicates the maximum continuous current that the IGBT can handle while maintaining proper functionality. The pulsed collector current rating specifies the maximum current that the IGBT can endure for short durations, typically in pulsed or transient conditions. VCE(ON) signifies the voltage drop across the collector-emitter junction when the IGBT is fully turned on and conducting current. This parameter is crucial for power loss calculations and efficiency analysis. Switching energy refers to the amount of energy dissipated during the switching process of the IGBT. Minimizing switching energy is vital for reducing power losses and enhancing overall efficiency. Lastly, gate charge denotes the amount of charge required to turn the IGBT on or off. Gate charge influences the switching speed and control characteristics of the device. By considering these parameters, engineers and designers can carefully select the most suitable single IGBT that aligns with the specific requirements of their application, ensuring optimal performance and reliability.