HiPerFAST™ Series, Single IGBTs

Results:
157
Manufacturer
Series
Switching Energy
Vce(on) (Max) @ Vge, Ic
Td (on/off) @ 25°C
Test Condition
Gate Charge
Power - Max
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Reverse Recovery Time (trr)
Supplier Device Package
Package / Case
Operating Temperature
Voltage - Collector Emitter Breakdown (Max)
IGBT Type
Mounting Type
Input Type
Grade
Qualification
Results remaining157
Applied Filters:
HiPerFAST™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseSupplier Device PackageIGBT TypeVoltage - Collector Emitter Breakdown (Max)Power - MaxReverse Recovery Time (trr)SeriesCurrent - Collector (Ic) (Max)Current - Collector Pulsed (Icm)Vce(on) (Max) @ Vge, IcSwitching EnergyInput TypeGate ChargeTd (on/off) @ 25°CTest Condition
IXGT40N60C2D1
IGBT 600V 75A 300W TO268
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
PT
600 V
300 W
25 ns
HiPerFAST™
75 A
200 A
2.7V @ 15V, 30A
200µJ (off)
Standard
95 nC
18ns/90ns
400V, 30A, 3Ohm, 15V
IXGT50N90B2
IGBT 900V 75A 400W TO268
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
PT
900 V
400 W
-
HiPerFAST™
75 A
200 A
2.7V @ 15V, 50A
4.7mJ (off)
Standard
135 nC
20ns/350ns
720V, 50A, 5Ohm, 15V
IXGT50N60B
IGBT 600V 75A 300W TO268
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
-
600 V
300 W
-
HiPerFAST™
75 A
200 A
2.3V @ 15V, 50A
3mJ (off)
Standard
160 nC
50ns/150ns
480V, 50A, 2.7Ohm, 15V
IXGT40N60B2
IGBT 600V 75A 300W TO268
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
PT
600 V
300 W
-
HiPerFAST™
75 A
200 A
1.7V @ 15V, 30A
400µJ (off)
Standard
100 nC
18ns/130ns
400V, 30A, 3.3Ohm, 15V
IXGT30N60C2D1
IGBT 600V 70A 190W TO268
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
PT
600 V
190 W
25 ns
HiPerFAST™
70 A
150 A
2.7V @ 15V, 24A
190µJ (off)
Standard
70 nC
13ns/70ns
400V, 24A, 5Ohm, 15V
IXGT40N60B2D1
IGBT 600V 75A 300W TO268
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
PT
600 V
300 W
25 ns
HiPerFAST™
75 A
200 A
1.7V @ 15V, 30A
400µJ (off)
Standard
100 nC
18ns/130ns
400V, 30A, 3.3Ohm, 15V
IXGT30N60B
IGBT 600V 60A 200W TO268
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
-
600 V
200 W
-
HiPerFAST™
60 A
120 A
1.8V @ 15V, 30A
1.3mJ (off)
Standard
125 nC
25ns/130ns
480V, 30A, 4.7Ohm, 15V
IXGR24N60B
IGBT 600V 42A 80W ISOPLUS247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-
TO-247-3
ISOPLUS247™
-
600 V
80 W
-
HiPerFAST™
42 A
-
2.5V @ 15V, 24A
-
Standard
-
-
-
IXGA16N60B2D1
IGBT 600V 40A 150W TO263
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
PT
600 V
150 W
30 ns
HiPerFAST™
40 A
100 A
1.95V @ 15V, 12A
160µJ (on), 120µJ (off)
Standard
24 nC
18ns/73ns
400V, 12A, 22Ohm, 15V
IXGA16N60C2
IGBT 600V 40A 150W TO263
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
PT
600 V
150 W
-
HiPerFAST™
40 A
100 A
3V @ 15V, 12A
160µJ (on), 90µJ (off)
Standard
25 nC
16ns/75ns
400V, 12A, 22Ohm, 15V
IXGA7N60BD1
IGBT 600V 14A 80W TO263
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
-
600 V
80 W
35 ns
HiPerFAST™
14 A
56 A
2V @ 15V, 7A
300µJ (off)
Standard
25 nC
10ns/100ns
480V, 7A, 18Ohm, 15V
IXGA12N60BD1
IGBT 600V 24A 100W TO263AA
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
-
600 V
100 W
-
HiPerFAST™
24 A
-
2.1V @ 15V, 12A
500µJ (off)
Standard
32 nC
20ns/150ns
-
IXGA12N60C
IGBT 600V 24A 100W TO263AA
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
-
600 V
100 W
-
HiPerFAST™
24 A
48 A
2.7V @ 15V, 12A
90µJ (off)
Standard
32 nC
20ns/60ns
480V, 12A, 18Ohm, 15V
IXGC16N60B2
IGBT 600V 28A 63W ISOPLUS220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
ISOPLUS220™
ISOPLUS220™
PT
600 V
63 W
-
HiPerFAST™
28 A
100 A
2.3V @ 15V, 12A
150mJ (off)
Standard
32 nC
25ns/70ns
400V, 12A, 22Ohm, 15V
IXGC16N60B2D1
IGBT 600V 28A 63W ISOPLUS220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
ISOPLUS220™
ISOPLUS220™
PT
600 V
63 W
110 ns
HiPerFAST™
28 A
100 A
2.3V @ 15V, 12A
150mJ (off)
Standard
32 nC
25ns/70ns
400V, 12A, 22Ohm, 15V
IXGR60N60C2
IGBT 600V 75A 250W ISOPLUS247
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Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
ISOPLUS247™
PT
600 V
250 W
-
HiPerFAST™
75 A
300 A
2.7V @ 15V, 50A
490µJ (off)
Standard
140 nC
18ns/95ns
400V, 50A, 2Ohm, 15V
IXGT30N60B2
IGBT 600V 70A 190W TO268
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
PT
600 V
190 W
-
HiPerFAST™
70 A
150 A
1.8V @ 15V, 24A
320µJ (off)
Standard
66 nC
13ns/110ns
400V, 24A, 5Ohm, 15V
IXGT30N60B2D1
IGBT 600V 70A 190W TO268
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
PT
600 V
190 W
25 ns
HiPerFAST™
70 A
150 A
1.8V @ 15V, 24A
320µJ (off)
Standard
66 nC
13ns/110ns
400V, 24A, 5Ohm, 15V
IXGT40N60C2
IGBT 600V 75A 300W TO268
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
PT
600 V
300 W
-
HiPerFAST™
75 A
200 A
2.7V @ 15V, 30A
200µJ (off)
Standard
95 nC
18ns/90ns
400V, 30A, 3Ohm, 15V
IXGR32N90B2D1
IGBT 900V 47A 160W ISOPLUS247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
ISOPLUS247™
PT
900 V
160 W
190 ns
HiPerFAST™
47 A
200 A
2.9V @ 15V, 32A
2.2mJ (off)
Standard
89 nC
20ns/260ns
720V, 32A, 5Ohm, 15V

About  Single IGBTs

Single Insulated-Gate Bipolar Transistors (IGBTs) are sophisticated semiconductor devices composed of multiple layers and equipped with three terminals. These devices are specifically designed to handle high currents and offer rapid switching capabilities. They are highly valued in a wide range of applications. The performance and characteristics of single IGBTs are defined by several key parameters. These parameters include the device type, collector-emitter breakdown voltage, collector current rating, pulsed collector current rating, VCE(ON), switching energy, and gate charge. The device type refers to the specific model or variant of the IGBT. Different models may possess distinct features and characteristics tailored to meet the requirements of different applications. The collector-emitter breakdown voltage represents the maximum voltage that the device can withstand across its collector and emitter terminals without experiencing a breakdown or failure. The collector current rating indicates the maximum continuous current that the IGBT can handle while maintaining proper functionality. The pulsed collector current rating specifies the maximum current that the IGBT can endure for short durations, typically in pulsed or transient conditions. VCE(ON) signifies the voltage drop across the collector-emitter junction when the IGBT is fully turned on and conducting current. This parameter is crucial for power loss calculations and efficiency analysis. Switching energy refers to the amount of energy dissipated during the switching process of the IGBT. Minimizing switching energy is vital for reducing power losses and enhancing overall efficiency. Lastly, gate charge denotes the amount of charge required to turn the IGBT on or off. Gate charge influences the switching speed and control characteristics of the device. By considering these parameters, engineers and designers can carefully select the most suitable single IGBT that aligns with the specific requirements of their application, ensuring optimal performance and reliability.