Manufacturer:
onsemiDescription:
IGBT 1200V 21A 167W TO220AB
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Attributes
Technical Documents
| TYPE | DESCRIPTION |
|---|---|
| Manufacturer | onsemi |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 65 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 5A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 22ns/160ns |
| Switching Energy | 450µJ (on), 390µJ (off) |
| Test Condition | 960V, 5A, 25Ohm, 15V |
| Gate Charge | 53 nC |
| Current - Collector (Ic) (Max) | 21 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 40 A |
| Power - Max | 167 W |
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HGTP5N120BND - From Manufacturer: onsemi, it is an IGBT 1200V 21A 167W TO220AB, part of Discrete Semiconductor Products, Transistors, IGBTs, Single IGBTs. . HGTP5N120BND stock status: In stock; order now! Ships immediately.
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