Manufacturer:
Toshiba Semiconductor and StorageDescription:
DISCRETE IGBT TRANSISTOR TO-3PN(
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Attributes
Technical Documents
| TYPE | DESCRIPTION |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 600 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 40A |
| Supplier Device Package | TO-3P(N) |
| Switching Energy | -, 290µJ (off) |
| Test Condition | 280V, 40A, 10Ohm, 20V |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 230 W |
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GT40QR21(STA1,E,D - From Manufacturer: Toshiba Electronic Devices and Storage Corporation, it is an DISCRETE IGBT TRANSISTOR TO-3PN(, part of Discrete Semiconductor Products, Transistors, IGBTs, Single IGBTs. GT40QR21(STA1,E,D stock status: In stock; order now! Ships immediately.
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