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Manufacturer:
Toshiba Semiconductor and StorageDescription:
SMOS 2 IN 1 DUAL NCH HIGH ESD PR
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Attributes
Technical Documents
| TYPE | DESCRIPTION |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSVII-H |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 285mW (Ta) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 40pF @ 10V |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 100mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 4.5V |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | US6 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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SSM6N7002KFU,LXH - From Manufacturer: Toshiba Electronic Devices and Storage Corporation, it is an SMOS 2 IN 1 DUAL NCH HIGH ESD PR, part of Discrete Semiconductor Products, Transistors, FETs, MOSFETs, FET, MOSFET Arrays. SSM6N7002KFU,LXH stock status: need to confirm with us, contact us! Quick Reply.
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