GreenBridge™ PowerTrench® Series, FET, MOSFET Arrays

Results:
4
Manufacturer
Series
FET Feature
Input Capacitance (Ciss) (Max) @ Vds
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Configuration
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Power - Max
Operating Temperature
FET Type
Grade
Mounting Type
Supplier Device Package
Qualification
Package / Case
Technology
Results remaining4
Applied Filters:
GreenBridge™ PowerTrench®
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseSupplier Device PackageGradePower - MaxTechnologySeriesFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsQualificationConfigurationInput Capacitance (Ciss) (Max) @ Vds
FDMQ8203
MOSFET 2N/2P-CH 100V/80V 12-MLP
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
13,292 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
12-WDFN Exposed Pad
12-MLP (5x4.5)
-
2.5W
MOSFET (Metal Oxide)
GreenBridge™ PowerTrench®
Logic Level Gate
100V, 80V
3.4A, 2.6A
110mOhm @ 3A, 10V
4V @ 250µA
5nC @ 10V
-
2 N and 2 P-Channel (Full Bridge)
210pF @ 50V, 850pF @ 40V
FDMQ8403
MOSFET 4N-CH 100V 3.1A 12MLP
1+
$1.5211
5+
$1.4366
10+
$1.3521
Quantity
2,900 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
12-WDFN Exposed Pad
12-MLP (5x4.5)
-
1.9W
MOSFET (Metal Oxide)
GreenBridge™ PowerTrench®
-
100V
3.1A
110mOhm @ 3A, 10V
4V @ 250µA
5nC @ 10V
-
4 N-Channel (Full Bridge)
215pF @ 15V
FDMQ8403
POWER FIELD-EFFECT TRANSISTOR, 3
1+
$1.5211
5+
$1.4366
10+
$1.3521
Quantity
2,900 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
12-WDFN Exposed Pad
12-MLP (5x4.5)
1.9W
GreenBridge™ PowerTrench®
Standard
100V
3.1A
110mOhm @ 3A, 10V
4V @ 250µA
5nC @ 10V
215pF @ 15V
FDMQ86530L
MOSFET 4N-CH 60V 8A 12MLP
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
2,379 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
12-WDFN Exposed Pad
12-MLP (5x4.5)
-
1.9W
MOSFET (Metal Oxide)
GreenBridge™ PowerTrench®
Logic Level Gate
60V
8A
17.5mOhm @ 8A, 10V
3V @ 250µA
33nC @ 10V
-
4 N-Channel (Full Bridge)
2295pF @ 30V

FET, MOSFET Arrays

Field-effect transistors (FETs) are electronic devices that utilize an electric field to regulate the flow of current. By applying a voltage to the gate terminal, the conductivity between the drain and source terminals can be modified. Unlike bipolar junction transistors, FETs are unipolar transistors, which means they rely on a single type of charge carrier for their operation. This can either be electrons or holes, but not both. One of the key advantages of FETs is their high input impedance at low frequencies. This property arises due to the fact that the gate terminal of an FET doesn't draw any current, as it's designed to function in a voltage-driven mode. As a result, the input impedance of an FET can be several orders of magnitude greater than that of a similarly configured bipolar transistor. Field-effect transistors come in various types, with the most common ones being Junction FETs (JFETs) and Metal Oxide Semiconductor FETs (MOSFETs). JFETs employ a reverse-biased pn-junction to control the flow of current, while MOSFETs use an oxide layer to insulate the gate from the channel region. FETs have numerous applications in electronics, including amplifiers, switches, oscillators, and voltage regulators. Due to their high input impedance, FETs are often used in circuits where low power consumption and minimal loading effects are crucial considerations. In summary, field-effect transistors (FETs) are electronic devices that utilize an electric field to control current flow. They are unipolar transistors that rely on a single type of charge carrier for their operation. FETs offer high input impedance at low frequencies, making them ideal for use in low power applications where signal quality is a critical factor.