Z-Rec® Series, FET, MOSFET Arrays

Results:
3
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Power - Max
Current - Continuous Drain (Id) @ 25°C
Configuration
Drain to Source Voltage (Vdss)
Operating Temperature
FET Feature
Grade
Mounting Type
Supplier Device Package
Qualification
Package / Case
Technology
Results remaining3
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Z-Rec®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseSupplier Device PackageOperating TemperatureGradeSeriesFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxQualificationConfigurationTechnology
CAS120M12BM2
MOSFET 2N-CH 1200V 193A MODULE
1+
$963.3803
5+
$909.8592
10+
$856.3380
Quantity
100 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
Module
Module
-40°C ~ 150°C (TJ)
-
Z-Rec®
-
1200V (1.2kV)
193A (Tc)
16mOhm @ 120A, 20V
2.6V @ 6mA (Typ)
378nC @ 20V
6470pF @ 800V
925W
-
2 N-Channel (Half Bridge)
Silicon Carbide (SiC)
CAS300M17BM2
MOSFET 2N-CH 1700V 325A MODULE
1+
$1267.6056
5+
$1197.1831
10+
$1126.7606
Quantity
72 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
Module
Module
-40°C ~ 150°C (TJ)
-
Z-Rec®
-
1700V (1.7kV)
325A (Tc)
10mOhm @ 225A, 20V
2.3V @ 15mA (Typ)
1076nC @ 20V
20000pF @ 1000V
1760W
-
2 N-Channel (Half Bridge)
Silicon Carbide (SiC)
CCS020M12CM2
MOSFET 6N-CH 1200V 29.5A MODULE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
Module
Module
-40°C ~ 150°C (TJ)
-
Z-Rec®
-
1200V (1.2kV)
29.5A (Tc)
98mOhm @ 20A, 20V
2.2V @ 1mA (Typ)
61.5nC @ 20V
900pF @ 800V
167W
-
6 N-Channel (3-Phase Bridge)
Silicon Carbide (SiC)

About  FET, MOSFET Arrays

Field-effect transistors (FETs) are electronic devices that utilize an electric field to regulate the flow of current. By applying a voltage to the gate terminal, the conductivity between the drain and source terminals can be modified. Unlike bipolar junction transistors, FETs are unipolar transistors, which means they rely on a single type of charge carrier for their operation. This can either be electrons or holes, but not both. One of the key advantages of FETs is their high input impedance at low frequencies. This property arises due to the fact that the gate terminal of an FET doesn't draw any current, as it's designed to function in a voltage-driven mode. As a result, the input impedance of an FET can be several orders of magnitude greater than that of a similarly configured bipolar transistor. Field-effect transistors come in various types, with the most common ones being Junction FETs (JFETs) and Metal Oxide Semiconductor FETs (MOSFETs). JFETs employ a reverse-biased pn-junction to control the flow of current, while MOSFETs use an oxide layer to insulate the gate from the channel region. FETs have numerous applications in electronics, including amplifiers, switches, oscillators, and voltage regulators. Due to their high input impedance, FETs are often used in circuits where low power consumption and minimal loading effects are crucial considerations. In summary, field-effect transistors (FETs) are electronic devices that utilize an electric field to control current flow. They are unipolar transistors that rely on a single type of charge carrier for their operation. FETs offer high input impedance at low frequencies, making them ideal for use in low power applications where signal quality is a critical factor.