STripFET™ F7 Series, FET, MOSFET Arrays

Results:
5
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Power - Max
Current - Continuous Drain (Id) @ 25°C
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Operating Temperature
FET Feature
Configuration
Grade
Mounting Type
Supplier Device Package
Qualification
Package / Case
Technology
Results remaining5
Applied Filters:
STripFET™ F7
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseOperating TemperatureSupplier Device PackageTechnologyFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxSeriesQualificationGradeConfiguration
STL64DN4F7AG
MOSFET N-CH 40V 40A POWERFLAT
1+
$2.0282
5+
$1.9155
10+
$1.8028
Quantity
66,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
-55°C ~ 175°C (TJ)
PowerFlat™ (5x6)
MOSFET (Metal Oxide)
-
40V
40A (Tc)
8.5mOhm @ 20A, 10V
4V @ 250µA
9.8nC @ 10V
637pF @ 25V
57W (Tc)
STripFET™ F7
AEC-Q101
Automotive
2 N-Channel (Dual)
STL38DN6F7AG
AUTOMOTIVE-GRADE DUAL N-CHANNEL
1+
$11.4085
5+
$10.7746
10+
$10.1408
Quantity
48,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
-55°C ~ 175°C (TJ)
PowerFlat™ (5x6)
MOSFET (Metal Oxide)
-
60V
10A (Tc)
27mOhm @ 5A, 10V
4V @ 250µA
7.9nC @ 10V
380pF @ 25V
57.7W (Tc)
STripFET™ F7
AEC-Q101
Automotive
2 N-Channel (Dual)
STL76DN4LF7AG
MOSFET 2N-CH 40V 40A PWRFLAT
1+
$4.0563
5+
$3.8310
10+
$3.6056
Quantity
12,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
-55°C ~ 175°C (TJ)
PowerFlat™ (5x6)
MOSFET (Metal Oxide)
-
40V
40A (Tc)
6mOhm @ 10A, 10V
2.5V @ 250µA
17nC @ 10V
956pF @ 25V
71W (Tc)
STripFET™ F7
AEC-Q101
Automotive
2 N-Channel (Dual)
STL52DN4LF7AG
AUTOMOTIVE-GRADE DUAL N-CHANNEL
1+
$10.6479
5+
$10.0563
10+
$9.4648
Quantity
2,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
-55°C ~ 175°C (TJ)
PowerFlat™ (5x6)
MOSFET (Metal Oxide)
-
40V
18A (Tc)
16mOhm @ 6A, 10V
2.5V @ 250µA
9.4nC @ 10V
500pF @ 25V
65W (Tc)
STripFET™ F7
AEC-Q101
Automotive
2 N-Channel (Dual)
STL105DN4LF7AG
AUTOMOTIVE-GRADE N-CHANNEL 40 V,
1+
$10.1408
5+
$9.5775
10+
$9.0141
Quantity
813 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
-55°C ~ 175°C (TJ)
PowerFlat™ (5x6)
MOSFET (Metal Oxide)
-
40V
40A (Tc)
4.5mOhm @ 12A, 10V
2.5V @ 250µA
27.5nC @ 10V
1594pF @ 25V
94W
STripFET™ F7
AEC-Q101
Automotive
2 N-Channel (Dual)

About  FET, MOSFET Arrays

Field-effect transistors (FETs) are electronic devices that utilize an electric field to regulate the flow of current. By applying a voltage to the gate terminal, the conductivity between the drain and source terminals can be modified. Unlike bipolar junction transistors, FETs are unipolar transistors, which means they rely on a single type of charge carrier for their operation. This can either be electrons or holes, but not both. One of the key advantages of FETs is their high input impedance at low frequencies. This property arises due to the fact that the gate terminal of an FET doesn't draw any current, as it's designed to function in a voltage-driven mode. As a result, the input impedance of an FET can be several orders of magnitude greater than that of a similarly configured bipolar transistor. Field-effect transistors come in various types, with the most common ones being Junction FETs (JFETs) and Metal Oxide Semiconductor FETs (MOSFETs). JFETs employ a reverse-biased pn-junction to control the flow of current, while MOSFETs use an oxide layer to insulate the gate from the channel region. FETs have numerous applications in electronics, including amplifiers, switches, oscillators, and voltage regulators. Due to their high input impedance, FETs are often used in circuits where low power consumption and minimal loading effects are crucial considerations. In summary, field-effect transistors (FETs) are electronic devices that utilize an electric field to control current flow. They are unipolar transistors that rely on a single type of charge carrier for their operation. FETs offer high input impedance at low frequencies, making them ideal for use in low power applications where signal quality is a critical factor.