FETKY™ Series, FET, MOSFET Arrays

Results:
4
Manufacturer
Series
Configuration
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Supplier Device Package
Package / Case
Current - Continuous Drain (Id) @ 25°C
Operating Temperature
FET Feature
Grade
Mounting Type
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Qualification
Technology
Power - Max
Results remaining4
Applied Filters:
FETKY™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseSupplier Device PackageGradePower - MaxTechnologySeriesFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsQualificationConfiguration
IRF7901D1TRPBF
MOSFET 2N-CH 30V 6.2A 8SOIC
1+
$2.5352
5+
$2.3944
10+
$2.2535
Quantity
8,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SO
-
2W
MOSFET (Metal Oxide)
FETKY™
Logic Level Gate
30V
6.2A
38mOhm @ 5A, 4.5V
1V @ 250µA
10.5nC @ 5V
780pF @ 16V
-
2 N-Channel (Dual)
IRF7901D1
MOSFET 2N-CH 30V 6.2A 8SOIC
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SO
-
2W
MOSFET (Metal Oxide)
FETKY™
Logic Level Gate
30V
6.2A
38mOhm @ 5A, 4.5V
1V @ 250µA
10.5nC @ 5V
780pF @ 16V
-
2 N-Channel (Dual)
IRF7901D1TR
MOSFET 2N-CH 30V 6.2A 8SOIC
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SO
-
2W
MOSFET (Metal Oxide)
FETKY™
Logic Level Gate
30V
6.2A
38mOhm @ 5A, 4.5V
1V @ 250µA
10.5nC @ 5V
780pF @ 16V
-
2 N-Channel (Dual)
IRF7335D1TR
MOSFET 2N-CH 30V 10A 14-SOIC
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
14-SOIC (0.154", 3.90mm Width)
14-SOIC
-
2W
MOSFET (Metal Oxide)
FETKY™
Logic Level Gate
30V
10A
17.5mOhm @ 10A, 4.5V
1V @ 250µA
20nC @ 4.5V
1500pF @ 15V
-
2 N-Channel (Dual) Asymmetrical

FET, MOSFET Arrays

Field-effect transistors (FETs) are electronic devices that utilize an electric field to regulate the flow of current. By applying a voltage to the gate terminal, the conductivity between the drain and source terminals can be modified. Unlike bipolar junction transistors, FETs are unipolar transistors, which means they rely on a single type of charge carrier for their operation. This can either be electrons or holes, but not both. One of the key advantages of FETs is their high input impedance at low frequencies. This property arises due to the fact that the gate terminal of an FET doesn't draw any current, as it's designed to function in a voltage-driven mode. As a result, the input impedance of an FET can be several orders of magnitude greater than that of a similarly configured bipolar transistor. Field-effect transistors come in various types, with the most common ones being Junction FETs (JFETs) and Metal Oxide Semiconductor FETs (MOSFETs). JFETs employ a reverse-biased pn-junction to control the flow of current, while MOSFETs use an oxide layer to insulate the gate from the channel region. FETs have numerous applications in electronics, including amplifiers, switches, oscillators, and voltage regulators. Due to their high input impedance, FETs are often used in circuits where low power consumption and minimal loading effects are crucial considerations. In summary, field-effect transistors (FETs) are electronic devices that utilize an electric field to control current flow. They are unipolar transistors that rely on a single type of charge carrier for their operation. FETs offer high input impedance at low frequencies, making them ideal for use in low power applications where signal quality is a critical factor.