PowerPAIR®, TrenchFET® Series, FET, MOSFET Arrays

Results:
4
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Vgs(th) (Max) @ Id
Power - Max
Configuration
Supplier Device Package
Drain to Source Voltage (Vdss)
Operating Temperature
FET Feature
Grade
Mounting Type
Qualification
Package / Case
Technology
Results remaining4
Applied Filters:
PowerPAIR®, TrenchFET®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureGradePackage / CaseTechnologySeriesFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxSupplier Device PackageQualificationConfiguration
SIZ340DT-T1-GE3
MOSFET 2N-CH 30V 30A PWRPAIR3X3
1+
$0.3549
5+
$0.3352
10+
$0.3155
Quantity
102,946 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
8-PowerWDFN
MOSFET (Metal Oxide)
PowerPAIR®, TrenchFET®
-
30V
30A, 40A
9.5mOhm @ 15.6A, 10V
2.4V @ 250µA
19nC @ 10V
760pF @ 15V
16.7W, 31W
8-Power33 (3x3)
-
2 N-Channel (Half Bridge)
SIZF914DT-T1-GE3
DUAL N-CH 25-V (D-S) MOSFET W/SC
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
8-PowerWDFN
MOSFET (Metal Oxide)
PowerPAIR®, TrenchFET®
-
25V
23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc)
3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V
2.4V @ 250µA, 2.2V @ 250µA
21nC @ 10V, 98nC @ 10V
1050pF @ 10V, 4670pF @ 10V
3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
8-PowerPair® (6x5)
-
2 N-Channel (Dual)
SIZ346DT-T1-GE3
MOSFET 2N-CH 30V 17/30A 8POWER33
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
8-PowerWDFN
MOSFET (Metal Oxide)
PowerPAIR®, TrenchFET®
-
30V
17A (Tc), 30A (Tc)
28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
2.2V @ 250µA, 2.4V @ 250µA
5nC @ 4.5V, 9nC @ 4.5V
325pF @ 15V, 650pF @ 15V
16W, 16.7W
8-Power33 (3x3)
-
2 N-Channel (Dual)
SIZ320DT-T1-GE3
MOSFET 2N-CH 25V 30/40A 8POWER33
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
8-PowerWDFN
MOSFET (Metal Oxide)
PowerPAIR®, TrenchFET®
-
25V
30A (Tc), 40A (Tc)
8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V
2.4V @ 250µA
8.9nC @ 4.5V, 11.9nC @ 4.5V
660pF @ 12.5V, 1370pF @ 12.5V
16.7W, 31W
8-Power33 (3x3)
-
2 N-Channel (Dual)

FET, MOSFET Arrays

Field-effect transistors (FETs) are electronic devices that utilize an electric field to regulate the flow of current. By applying a voltage to the gate terminal, the conductivity between the drain and source terminals can be modified. Unlike bipolar junction transistors, FETs are unipolar transistors, which means they rely on a single type of charge carrier for their operation. This can either be electrons or holes, but not both. One of the key advantages of FETs is their high input impedance at low frequencies. This property arises due to the fact that the gate terminal of an FET doesn't draw any current, as it's designed to function in a voltage-driven mode. As a result, the input impedance of an FET can be several orders of magnitude greater than that of a similarly configured bipolar transistor. Field-effect transistors come in various types, with the most common ones being Junction FETs (JFETs) and Metal Oxide Semiconductor FETs (MOSFETs). JFETs employ a reverse-biased pn-junction to control the flow of current, while MOSFETs use an oxide layer to insulate the gate from the channel region. FETs have numerous applications in electronics, including amplifiers, switches, oscillators, and voltage regulators. Due to their high input impedance, FETs are often used in circuits where low power consumption and minimal loading effects are crucial considerations. In summary, field-effect transistors (FETs) are electronic devices that utilize an electric field to control current flow. They are unipolar transistors that rely on a single type of charge carrier for their operation. FETs offer high input impedance at low frequencies, making them ideal for use in low power applications where signal quality is a critical factor.