CoolMOS™ Series, FET, MOSFET Arrays

Results:
41
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Configuration
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Power - Max
FET Type
FET Feature
Operating Temperature
Mounting Type
Drain to Source Voltage (Vdss)
Grade
Qualification
Technology
Results remaining41
Applied Filters:
CoolMOS™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseSupplier Device PackageSeriesPower - MaxFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ Vds
APTC60DSKM45T1G
MOSFET 2N-CH 600V 49A SP1
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Quantity
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PCB Symbol, Footprint & 3D Model
Chassis Mount
-40°C ~ 150°C (TJ)
SP1
SP1
CoolMOS™
250W
2 N Channel (Dual Buck Chopper)
Super Junction
600V
49A
45mOhm @ 24.5A, 10V
3.9V @ 3mA
150nC @ 10V
7200pF @ 25V
APTC90AM60T1G
MOSFET 2N-CH 900V 59A SP1
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Quantity
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PCB Symbol, Footprint & 3D Model
Chassis Mount
-40°C ~ 150°C (TJ)
SP1
SP1
CoolMOS™
462W
2 N-Channel (Half Bridge)
Super Junction
900V
59A
60mOhm @ 52A, 10V
3.5V @ 6mA
540nC @ 10V
13600pF @ 100V
APTC60DDAM45CT1G
MOSFET 2N-CH 600V 49A SP1
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Quantity
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PCB Symbol, Footprint & 3D Model
Chassis Mount
-40°C ~ 150°C (TJ)
SP1
SP1
CoolMOS™
250W
2 N-Channel (Dual)
Standard
600V
49A
45mOhm @ 24.5A, 10V
3.9V @ 3mA
150nC @ 10V
7200pF @ 25V
APTC60DSKM45CT1G
MOSFET 2N-CH 600V 49A SP1
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Quantity
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PCB Symbol, Footprint & 3D Model
Chassis Mount
-40°C ~ 150°C (TJ)
SP1
SP1
CoolMOS™
250W
2 N-Channel (Dual)
Super Junction
600V
49A
45mOhm @ 24.5A, 10V
3.9V @ 3mA
150nC @ 10V
7200pF @ 25V
APTC60DSKM70CT1G
MOSFET 2N-CH 600V 39A SP1
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Quantity
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PCB Symbol, Footprint & 3D Model
Chassis Mount
-
SP1
SP1
CoolMOS™
250W
2 N-Channel (Dual)
Super Junction
600V
39A
70mOhm @ 39A, 10V
3.9V @ 2.7mA
259nC @ 10V
7000pF @ 25V
APTC90H12SCTG
MOSFET 4N-CH 900V 30A SP4
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Quantity
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PCB Symbol, Footprint & 3D Model
Chassis Mount
-40°C ~ 150°C (TJ)
SP4
SP4
CoolMOS™
250W
4 N-Channel (Half Bridge)
Super Junction
900V
30A
120mOhm @ 26A, 10V
3.5V @ 3mA
270nC @ 10V
6800pF @ 100V
APTC60AM83BC1G
MOSFET 3N-CH 600V 36A SP1
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Quantity
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PCB Symbol, Footprint & 3D Model
Chassis Mount
-40°C ~ 150°C (TJ)
SP1
SP1
CoolMOS™
250W
3 N Channel (Phase Leg + Boost Chopper)
Super Junction
600V
36A
83mOhm @ 24.5A, 10V
5V @ 3mA
250nC @ 10V
7200pF @ 25V
APTC60DSKM70T1G
MOSFET 2N-CH 600V 39A SP1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-40°C ~ 150°C (TJ)
SP1
SP1
CoolMOS™
250W
2 N Channel (Dual Buck Chopper)
Super Junction
600V
39A
70mOhm @ 39A, 10V
3.9V @ 2.7mA
259nC @ 10V
700pF @ 25V
APTC90AM60SCTG
MOSFET 2N-CH 900V 59A SP4
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-40°C ~ 150°C (TJ)
SP4
SP4
CoolMOS™
462W
2 N-Channel (Half Bridge)
Super Junction
900V
59A
60mOhm @ 52A, 10V
3.5V @ 6mA
540nC @ 10V
13600pF @ 100V
APTC90HM60T3G
MOSFET 4N-CH 900V 59A SP3
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Quantity
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PCB Symbol, Footprint & 3D Model
Chassis Mount
-40°C ~ 150°C (TJ)
SP3
SP3
CoolMOS™
462W
4 N-Channel (Half Bridge)
Super Junction
900V
59A
60mOhm @ 52A, 10V
3.5V @ 6mA
540nC @ 10V
13600pF @ 100V
APTC90AM602G
MOSFET 2N-CH 900V 59A SP2
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Quantity
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PCB Symbol, Footprint & 3D Model
Chassis Mount
-40°C ~ 150°C (TJ)
SP2
SP2
CoolMOS™
462W
2 N-Channel (Half Bridge)
Super Junction
900V
59A
60mOhm @ 52A, 10V
3.5V @ 6mA
540nC @ 10V
13600pF @ 100V
APTC90H12T1G
MOSFET 4N-CH 900V 30A SP1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-40°C ~ 150°C (TJ)
SP1
SP1
CoolMOS™
250W
4 N-Channel (Half Bridge)
Super Junction
900V
30A
120mOhm @ 26A, 10V
3.5V @ 3mA
270nC @ 10V
6800pF @ 100V
APTC60AM83B1G
MOSFET 3N-CH 600V 36A SP1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-40°C ~ 150°C (TJ)
SP1
SP1
CoolMOS™
250W
3 N Channel (Phase Leg + Boost Chopper)
Super Junction
600V
36A
83mOhm @ 24.5A, 10V
5V @ 3mA
250nC @ 10V
7200pF @ 25V
APTC60AM18SCG
MOSFET 2N-CH 600V 143A SP6
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Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-40°C ~ 150°C (TJ)
SP6
SP6
CoolMOS™
833W
-
600V
143A
18mOhm @ 71.5A, 10V
3.9V @ 4mA
1036nC @ 10V
28000pF @ 25V
APTC60HM45SCTG
MOSFET 4N-CH 600V 49A SP4
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-40°C ~ 150°C (TJ)
SP4
SP4
CoolMOS™
250W
Super Junction
600V
49A
45mOhm @ 22.5A, 10V
3.9V @ 3mA
150nC @ 10V
7200pF @ 25V
APTC60TAM24TPG
MOSFET 6N-CH 600V 95A SP6-P
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Quantity
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PCB Symbol, Footprint & 3D Model
Chassis Mount
-40°C ~ 150°C (TJ)
SP6
SP6-P
CoolMOS™
462W
Super Junction
600V
95A
24mOhm @ 47.5A, 10V
3.9V @ 5mA
300nC @ 10V
14400pF @ 25V
APTC90H12T2G
MOSFET 4N-CH 900V 30A SP2
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-40°C ~ 150°C (TJ)
SP2
SP2
CoolMOS™
250W
Super Junction
900V
30A
120mOhm @ 26A, 10V
3.5V @ 3mA
270nC @ 10V
6800pF @ 100V
APTC90TAM60TPG
MOSFET 6N-CH 900V 59A SP6-P
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-40°C ~ 150°C (TJ)
SP6
SP6-P
CoolMOS™
462W
Super Junction
900V
59A
60mOhm @ 52A, 10V
3.5V @ 6mA
540nC @ 10V
13600pF @ 100V
APTC60DDAM45T1G
MOSFET 2N-CH 600V 49A SP1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-40°C ~ 150°C (TJ)
SP1
SP1
CoolMOS™
250W
Super Junction
600V
49A
45mOhm @ 24.5A, 10V
3.9V @ 3mA
150nC @ 10V
7200pF @ 25V
APTC60AM45B1G
MOSFET 3N-CH 600V 49A SP1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-40°C ~ 150°C (TJ)
SP1
SP1
CoolMOS™
250W
-
600V
49A
45mOhm @ 24.5A, 10V
3.9V @ 3mA
150nC @ 10V
7200pF @ 25V

About  FET, MOSFET Arrays

Field-effect transistors (FETs) are electronic devices that utilize an electric field to regulate the flow of current. By applying a voltage to the gate terminal, the conductivity between the drain and source terminals can be modified. Unlike bipolar junction transistors, FETs are unipolar transistors, which means they rely on a single type of charge carrier for their operation. This can either be electrons or holes, but not both. One of the key advantages of FETs is their high input impedance at low frequencies. This property arises due to the fact that the gate terminal of an FET doesn't draw any current, as it's designed to function in a voltage-driven mode. As a result, the input impedance of an FET can be several orders of magnitude greater than that of a similarly configured bipolar transistor. Field-effect transistors come in various types, with the most common ones being Junction FETs (JFETs) and Metal Oxide Semiconductor FETs (MOSFETs). JFETs employ a reverse-biased pn-junction to control the flow of current, while MOSFETs use an oxide layer to insulate the gate from the channel region. FETs have numerous applications in electronics, including amplifiers, switches, oscillators, and voltage regulators. Due to their high input impedance, FETs are often used in circuits where low power consumption and minimal loading effects are crucial considerations. In summary, field-effect transistors (FETs) are electronic devices that utilize an electric field to control current flow. They are unipolar transistors that rely on a single type of charge carrier for their operation. FETs offer high input impedance at low frequencies, making them ideal for use in low power applications where signal quality is a critical factor.