Z-FET™ Z-Rec™ Series, FET, MOSFET Arrays

Results:
1
Manufacturer
Series
Operating Temperature
FET Feature
Configuration
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Supplier Device Package
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Qualification
Package / Case
Technology
Power - Max
Current - Continuous Drain (Id) @ 25°C
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Applied Filters:
Z-FET™ Z-Rec™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseSupplier Device PackageOperating TemperatureGradeSeriesFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxQualificationConfigurationTechnology
CCS050M12CM2
MOSFET 6N-CH 1200V 87A MODULE
1+
¥861.9718
5+
¥814.0845
10+
¥766.1972
Quantity
13 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
Module
Module
150°C (TJ)
-
Z-FET™ Z-Rec™
-
1200V (1.2kV)
87A (Tc)
34mOhm @ 50A, 20V
2.3V @ 2.5mA
180nC @ 20V
2810pF @ 800V
337W
-
6 N-Channel (3-Phase Bridge)
Silicon Carbide (SiC)

About  FET, MOSFET Arrays

Field-effect transistors (FETs) are electronic devices that utilize an electric field to regulate the flow of current. By applying a voltage to the gate terminal, the conductivity between the drain and source terminals can be modified. Unlike bipolar junction transistors, FETs are unipolar transistors, which means they rely on a single type of charge carrier for their operation. This can either be electrons or holes, but not both. One of the key advantages of FETs is their high input impedance at low frequencies. This property arises due to the fact that the gate terminal of an FET doesn't draw any current, as it's designed to function in a voltage-driven mode. As a result, the input impedance of an FET can be several orders of magnitude greater than that of a similarly configured bipolar transistor. Field-effect transistors come in various types, with the most common ones being Junction FETs (JFETs) and Metal Oxide Semiconductor FETs (MOSFETs). JFETs employ a reverse-biased pn-junction to control the flow of current, while MOSFETs use an oxide layer to insulate the gate from the channel region. FETs have numerous applications in electronics, including amplifiers, switches, oscillators, and voltage regulators. Due to their high input impedance, FETs are often used in circuits where low power consumption and minimal loading effects are crucial considerations. In summary, field-effect transistors (FETs) are electronic devices that utilize an electric field to control current flow. They are unipolar transistors that rely on a single type of charge carrier for their operation. FETs offer high input impedance at low frequencies, making them ideal for use in low power applications where signal quality is a critical factor.