CoolSiC™ Series, FET, MOSFET Arrays

Results:
20
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Vgs(th) (Max) @ Id
Supplier Device Package
Configuration
Operating Temperature
FET Feature
Mounting Type
Package / Case
Technology
Grade
Drain to Source Voltage (Vdss)
Qualification
Power - Max
Results remaining20
Applied Filters:
CoolSiC™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeSupplier Device PackageOperating TemperaturePower - MaxPackage / CaseTechnologyConfigurationSeriesInput Capacitance (Ciss) (Max) @ VdsGradeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsQualification
FF11MR12W2M1HPB11BPSA1
1+
$251.7465
5+
$237.7606
10+
$223.7746
Quantity
260 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
-
-
-
-
-
-
CoolSiC™
-
-
-
1200V (1.2kV)
-
-
-
-
-
FF3MR12KM1PHOSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Chassis Mount
AG-62MM
-40°C ~ 150°C (TJ)
-
Module
Silicon Carbide (SiC)
2 N-Channel (Half Bridge)
CoolSiC™
29800pF @ 25V
-
-
1200V (1.2kV)
375A (Tc)
2.83mOhm @ 375A, 15V
5.15V @ 168mA
1000nC @ 15V
-
FF2MR12KM1PHOSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Chassis Mount
AG-62MM
-40°C ~ 150°C (TJ)
-
Module
Silicon Carbide (SiC)
2 N-Channel (Half Bridge)
CoolSiC™
39700pF @ 800V
-
-
1200V (1.2kV)
500A (Tc)
2.13mOhm @ 500A, 15V
5.15V @ 224mA
1340nC @ 15V
-
FF45MR12W1M1PB11BPSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Chassis Mount
AG-EASY1BM
-40°C ~ 150°C (TJ)
-
Module
Silicon Carbide (SiC)
2 N-Channel (Dual)
CoolSiC™
1840pF @ 800V
-
-
1200V (1.2kV)
25A (Tj)
45mOhm @ 25A, 15V
5.55V @ 10mA
62nC @ 15V
-
FF2MR12KM1HOSA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
AG-62MM
-40°C ~ 150°C (TJ)
-
Module
Silicon Carbide (SiC)
2 N-Channel (Half Bridge)
CoolSiC™
39700pF @ 800V
-
-
1200V (1.2kV)
500A (Tc)
2.13mOhm @ 500A, 15V
5.15V @ 224mA
1340nC @ 15V
-
FF6MR12KM1BOSA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
AG-62MM
-40°C ~ 150°C (TJ)
-
Module
Silicon Carbide (SiC)
2 N-Channel (Half Bridge)
CoolSiC™
14700pF @ 800V
-
-
1200V (1.2kV)
250A (Tc)
5.81mOhm @ 250A, 15V
5.15V @ 80mA
496nC @ 15V
-
FF6MR12KM1PHOSA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
AG-62MM
-40°C ~ 150°C (TJ)
-
Module
Silicon Carbide (SiC)
2 N-Channel (Half Bridge)
CoolSiC™
14700pF @ 800V
-
-
1200V (1.2kV)
250A (Tc)
5.81mOhm @ 250A, 15V
5.15V @ 80mA
496nC @ 15V
-
FF08MR12W1MA1B11ABPSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Chassis Mount
AG-EASY1BM-2
-40°C ~ 150°C (TJ)
-
Module
Silicon Carbide (SiC)
2 N-Channel (Dual)
CoolSiC™
16000pF @ 600V
-
-
1200V (1.2kV)
150A (Tj)
9.8mOhm @ 150A, 15V
5.55V @ 90mA
450nC @ 15V
-
FF17MR12W1M1HB70BPSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Chassis Mount
AG-EASY1B
-
-
Module
Silicon Carbide (SiC)
-
CoolSiC™
-
-
-
1200V (1.2kV)
-
-
-
-
-
FF6MR12W2M1HB11BPSA1
EASYDUAL MODULE WITH COOLSIC TRE
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Quantity
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PCB Symbol, Footprint & 3D Model
Chassis Mount
Module
-40°C ~ 175°C (TJ)
-
Module
Silicon Carbide (SiC)
2 N-Channel (Half Bridge)
CoolSiC™
13200pF @ 800V
-
Silicon Carbide (SiC)
1200V (1.2kV)
145A (Tj)
5.4mOhm @ 150A, 18V
5.15V @ 60mA
446nC @ 18V
-
DF14MR12W1M1HFB67BPSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Chassis Mount
AG-EASY1B
-
-
Module
Silicon Carbide (SiC)
-
CoolSiC™
-
-
-
1200V (1.2kV)
-
-
-
-
-
DF11MR12W1M1HFB67BPSA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
AG-EASY1B
-
-
Module
Silicon Carbide (SiC)
-
CoolSiC™
-
-
-
1200V (1.2kV)
-
-
-
-
-
FF17MR12W1M1HPB11BPSA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
AG-EASY1B
-
-
Module
Silicon Carbide (SiC)
-
CoolSiC™
-
-
-
1200V (1.2kV)
-
-
-
-
-
FF17MR12W1M1HB11BPSA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
AG-EASY1B
-
-
Module
Silicon Carbide (SiC)
-
CoolSiC™
-
-
-
1200V (1.2kV)
-
-
-
-
-
FS33MR12W1M1HB11BPSA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
AG-EASY1B
-
-
Module
Silicon Carbide (SiC)
-
CoolSiC™
-
-
-
1200V (1.2kV)
-
-
-
-
-
FF2MR12KM1HPHPSA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
AG-62MMHB
-40°C ~ 150°C (TJ)
-
Module
Silicon Carbide (SiC)
2 N-Channel (Half Bridge)
CoolSiC™
39700pF @ 800V
-
-
1200V (1.2kV)
500A (Tc)
2.13mOhm @ 500A, 15V
5.15V @ 224mA
1340nC @ 15V
-
FF3MR12KM1HOSA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
AG-62MM
-40°C ~ 150°C (TJ)
-
Module
Silicon Carbide (SiC)
2 N-Channel (Half Bridge)
CoolSiC™
29800pF @ 25V
-
-
1200V (1.2kV)
375A (Tc)
2.83mOhm @ 375A, 15V
5.15V @ 168mA
1000nC @ 15V
-
FF8MR12W1M1HB11BPSA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
AG-EASY1B
-
-
Module
Silicon Carbide (SiC)
-
CoolSiC™
-
-
-
1200V (1.2kV)
-
-
-
-
-
FF4MR12W2M1HB11BPSA1
EASYDUAL MODULE WITH COOLSIC TRE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
Module
-40°C ~ 175°C (TJ)
-
Module
Silicon Carbide (SiC)
2 N-Channel (Half Bridge)
CoolSiC™
17600pF @ 800V
-
Silicon Carbide (SiC)
1200V (1.2kV)
170A (Tj)
4mOhm @ 200A, 18V
5.15V @ 80mA
594nC @ 18V
-
FF8MR12W1M1HS4PB11BPSA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
AG-EASY1B
-40°C ~ 150°C (TJ)
-
Module
Silicon Carbide (SiC)
2 N-Channel
CoolSiC™
8800pF @ 800V
-
Silicon Carbide (SiC)
1200V (1.2kV)
100A (Tj)
8.1mOhm @ 100A, 18V
5.15V @ 40mA
297nC @ 18V
-

About  FET, MOSFET Arrays

Field-effect transistors (FETs) are electronic devices that utilize an electric field to regulate the flow of current. By applying a voltage to the gate terminal, the conductivity between the drain and source terminals can be modified. Unlike bipolar junction transistors, FETs are unipolar transistors, which means they rely on a single type of charge carrier for their operation. This can either be electrons or holes, but not both. One of the key advantages of FETs is their high input impedance at low frequencies. This property arises due to the fact that the gate terminal of an FET doesn't draw any current, as it's designed to function in a voltage-driven mode. As a result, the input impedance of an FET can be several orders of magnitude greater than that of a similarly configured bipolar transistor. Field-effect transistors come in various types, with the most common ones being Junction FETs (JFETs) and Metal Oxide Semiconductor FETs (MOSFETs). JFETs employ a reverse-biased pn-junction to control the flow of current, while MOSFETs use an oxide layer to insulate the gate from the channel region. FETs have numerous applications in electronics, including amplifiers, switches, oscillators, and voltage regulators. Due to their high input impedance, FETs are often used in circuits where low power consumption and minimal loading effects are crucial considerations. In summary, field-effect transistors (FETs) are electronic devices that utilize an electric field to control current flow. They are unipolar transistors that rely on a single type of charge carrier for their operation. FETs offer high input impedance at low frequencies, making them ideal for use in low power applications where signal quality is a critical factor.