ECOPACK® Series, FET, MOSFET Arrays

Results:
4
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Power - Max
Current - Continuous Drain (Id) @ 25°C
FET Feature
Operating Temperature
Configuration
Mounting Type
Supplier Device Package
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Package / Case
Technology
Grade
Qualification
Results remaining4
Applied Filters:
ECOPACK®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseGradeSeriesTechnologyFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdSupplier Device PackageQualificationConfigurationInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsPower - Max
SH68N65DM6AG
AUTOMOTIVE-GRADE N-CHANNEL 650 V
1+
$62.7465
5+
$59.2606
10+
$55.7746
Quantity
188 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
9-PowerSMD
-
ECOPACK®
MOSFET (Metal Oxide)
-
650V
64A (Tc)
41mOhm @ 23A, 10V
4.75V @ 250µA
9-ACEPACK SMIT
-
2 N-Channel (Half Bridge)
5900pF @ 100V
116nC @ 10V
379W (Tc)
SH32N65DM6AG
AUTOMOTIVE-GRADE N-CHANNEL 650 V
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
9-PowerSMD
-
ECOPACK®
MOSFET (Metal Oxide)
-
650V
32A (Tc)
97mOhm @ 23A, 10V
4.75V @ 250µA
9-ACEPACK SMIT
-
2 N-Channel (Half Bridge)
2211pF @ 100V
47nC @ 10V
208W (Tc)
SH63N65DM6AG
MOSFET 2N-CH 650V 53A 9ACEPACK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
9-PowerSMD
-
ECOPACK®
MOSFET (Metal Oxide)
Standard
650V
53A (Tc)
64mOhm @ 23A, 10V
4.75V @ 250µA
9-ACEPACK SMIT
-
2 N-Channel (Half Bridge)
3344pF @ 100V
80nC @ 10V
424W (Tc)
M1F45M12W2-1LA
AUTOMOTIVE-GRADE ACEPACK DMT-32
1+
$111.3882
5+
$105.2000
10+
$99.0118
Quantity
114 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
32-PowerDIP Module (1.264", 32.10mm)
-
ECOPACK®
Silicon Carbide (SiC)
Silicon Carbide (SiC)
1200V
30A (Tc)
64mOhm @ 20A, 18V
5V @ 1mA
ACEPACK DMT-32
-
4 N-Channel
2086pF @ 800V
100nC @ 18V
-

About  FET, MOSFET Arrays

Field-effect transistors (FETs) are electronic devices that utilize an electric field to regulate the flow of current. By applying a voltage to the gate terminal, the conductivity between the drain and source terminals can be modified. Unlike bipolar junction transistors, FETs are unipolar transistors, which means they rely on a single type of charge carrier for their operation. This can either be electrons or holes, but not both. One of the key advantages of FETs is their high input impedance at low frequencies. This property arises due to the fact that the gate terminal of an FET doesn't draw any current, as it's designed to function in a voltage-driven mode. As a result, the input impedance of an FET can be several orders of magnitude greater than that of a similarly configured bipolar transistor. Field-effect transistors come in various types, with the most common ones being Junction FETs (JFETs) and Metal Oxide Semiconductor FETs (MOSFETs). JFETs employ a reverse-biased pn-junction to control the flow of current, while MOSFETs use an oxide layer to insulate the gate from the channel region. FETs have numerous applications in electronics, including amplifiers, switches, oscillators, and voltage regulators. Due to their high input impedance, FETs are often used in circuits where low power consumption and minimal loading effects are crucial considerations. In summary, field-effect transistors (FETs) are electronic devices that utilize an electric field to control current flow. They are unipolar transistors that rely on a single type of charge carrier for their operation. FETs offer high input impedance at low frequencies, making them ideal for use in low power applications where signal quality is a critical factor.