Automotive, AEC-Q101, TrenchMOS™ Series, FET, MOSFET Arrays

Results:
3
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Power - Max
Current - Continuous Drain (Id) @ 25°C
Operating Temperature
FET Feature
Supplier Device Package
Drain to Source Voltage (Vdss)
Package / Case
FET Type
Mounting Type
Results remaining3
Applied Filters:
Automotive, AEC-Q101, TrenchMOS™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeOperating TemperaturePackage / CaseSeriesFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxSupplier Device Package
BUK7K5R6-30E,115
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
2 N-Channel (Dual)
-55°C ~ 175°C (TJ)
SOT-1205, 8-LFPAK56
Automotive, AEC-Q101, TrenchMOS™
Standard
30V
40A
5.6mOhm @ 25A, 10V
4V @ 1mA
29.7nC @ 10V
1969pF @ 25V
64W
LFPAK56D
BUK9K89-100E,115
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
2 N-Channel (Dual)
-55°C ~ 175°C (TJ)
SOT-1205, 8-LFPAK56
Automotive, AEC-Q101, TrenchMOS™
Logic Level Gate
100V
12.5A
85mOhm @ 5A, 10V
2.1V @ 1mA
16.8nC @ 10V
1108pF @ 25V
38W
LFPAK56D
NX3008NBKV,115
NOW NEXPERIA NX3008NBKV - SMALL
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
2 N-Channel (Dual)
-55°C ~ 150°C (TJ)
SOT-563, SOT-666
Automotive, AEC-Q101, TrenchMOS™
Logic Level Gate
30V
400mA
1.4Ohm @ 350mA, 4.5V
1.1V @ 250µA
0.68nC @ 4.5V
50pF @ 15V
500mW
SOT-666

FET, MOSFET Arrays

Field-effect transistors (FETs) are electronic devices that utilize an electric field to regulate the flow of current. By applying a voltage to the gate terminal, the conductivity between the drain and source terminals can be modified. Unlike bipolar junction transistors, FETs are unipolar transistors, which means they rely on a single type of charge carrier for their operation. This can either be electrons or holes, but not both. One of the key advantages of FETs is their high input impedance at low frequencies. This property arises due to the fact that the gate terminal of an FET doesn't draw any current, as it's designed to function in a voltage-driven mode. As a result, the input impedance of an FET can be several orders of magnitude greater than that of a similarly configured bipolar transistor. Field-effect transistors come in various types, with the most common ones being Junction FETs (JFETs) and Metal Oxide Semiconductor FETs (MOSFETs). JFETs employ a reverse-biased pn-junction to control the flow of current, while MOSFETs use an oxide layer to insulate the gate from the channel region. FETs have numerous applications in electronics, including amplifiers, switches, oscillators, and voltage regulators. Due to their high input impedance, FETs are often used in circuits where low power consumption and minimal loading effects are crucial considerations. In summary, field-effect transistors (FETs) are electronic devices that utilize an electric field to control current flow. They are unipolar transistors that rely on a single type of charge carrier for their operation. FETs offer high input impedance at low frequencies, making them ideal for use in low power applications where signal quality is a critical factor.