WolfPACK™ Series, FET, MOSFET Arrays

Results:
6
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Current - Continuous Drain (Id) @ 25°C
Configuration
Operating Temperature
FET Feature
Grade
Mounting Type
Supplier Device Package
Drain to Source Voltage (Vdss)
Qualification
Package / Case
Technology
Power - Max
Results remaining6
Applied Filters:
WolfPACK™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseSupplier Device PackagePower - MaxOperating TemperatureGradeSeriesFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsQualificationConfigurationTechnology
CAB011M12FM3
1200V SIC H-BRIDGE MODULE
1+
$380.2817
5+
$359.1549
10+
$338.0282
Quantity
288 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
Module
-
-
-40°C ~ 150°C (TJ)
-
WolfPACK™
-
1200V (1.2kV)
105A
14mOhm @ 100A, 15V
3.6V @ 35mA
324nC @ 15V
10300pF @ 800V
-
2 N-Channel (Half Bridge)
Silicon Carbide (SiC)
CAB008M12GM3
1200V 2B HALF-BRIDGE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
Module
-
-
-40°C ~ 150°C (TJ)
-
WolfPACK™
-
1200V (1.2kV)
-
10.4mOhm @ 150A, 15V
3.6V @ 46mA
472nC @ 15V
13600pF @ 800V
-
2 N-Channel (Half Bridge)
Silicon Carbide (SiC)
CAB016M12FM3
MOSFET 2 N-CH 1.2KV 78A MODULE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
Module
-
-
-40°C ~ 150°C (TJ)
-
WolfPACK™
-
1200V (1.2kV)
78A
21.3mOhm @ 80A, 15V
3.6V @ 23mA
236nC @ 15V
6600pF @ 800V
-
2 N-Channel (Half Bridge)
Silicon Carbide (SiC)
CCB021M12FM3
1200V SIC 6-PACK MODULE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
Module
-
-
-40°C ~ 150°C (TJ)
-
WolfPACK™
-
1200V (1.2kV)
51A
27.9mOhm @ 30A, 15V
3.6V @ 17.7mA
162nC @ 15V
4900pF @ 800V
-
6 N-Channel (3-Phase Bridge)
Silicon Carbide (SiC)
CAB006M12GM3
1200V 2B HALF-BRIDGE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
Module
-
-
-40°C ~ 150°C (TJ)
-
WolfPACK™
-
1200V (1.2kV)
-
6.9mOhm @ 200A, 15V
3.6V @ 69mA
708nC @ 15V
20400pF @ 800V
-
2 N-Channel (Half Bridge)
Silicon Carbide (SiC)
CCB032M12FM3
1200V SIC 6-PACK MODULE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
Module
-
-
-40°C ~ 150°C (TJ)
-
WolfPACK™
-
1200V (1.2kV)
40A
42.6mOhm @ 30A, 15V
3.6V @ 11.5mA
118nC @ 15V
3400pF @ 800V
-
6 N-Channel (3-Phase Bridge)
Silicon Carbide (SiC)

FET, MOSFET Arrays

Field-effect transistors (FETs) are electronic devices that utilize an electric field to regulate the flow of current. By applying a voltage to the gate terminal, the conductivity between the drain and source terminals can be modified. Unlike bipolar junction transistors, FETs are unipolar transistors, which means they rely on a single type of charge carrier for their operation. This can either be electrons or holes, but not both. One of the key advantages of FETs is their high input impedance at low frequencies. This property arises due to the fact that the gate terminal of an FET doesn't draw any current, as it's designed to function in a voltage-driven mode. As a result, the input impedance of an FET can be several orders of magnitude greater than that of a similarly configured bipolar transistor. Field-effect transistors come in various types, with the most common ones being Junction FETs (JFETs) and Metal Oxide Semiconductor FETs (MOSFETs). JFETs employ a reverse-biased pn-junction to control the flow of current, while MOSFETs use an oxide layer to insulate the gate from the channel region. FETs have numerous applications in electronics, including amplifiers, switches, oscillators, and voltage regulators. Due to their high input impedance, FETs are often used in circuits where low power consumption and minimal loading effects are crucial considerations. In summary, field-effect transistors (FETs) are electronic devices that utilize an electric field to control current flow. They are unipolar transistors that rely on a single type of charge carrier for their operation. FETs offer high input impedance at low frequencies, making them ideal for use in low power applications where signal quality is a critical factor.