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Manufacturer:
Vishay SiliconixDescription:
DUAL N-CHANNEL 40 V (D-S) MOSFET
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Attributes
Technical Documents
| TYPE | DESCRIPTION |
|---|---|
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Package / Case | 8-PowerDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 4.2W (Ta), 62.5W (Tc) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 41A (Ta), 159A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 5750pF @ 20V |
| Rds On (Max) @ Id, Vgs | 1.37mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 106nC @ 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAIR® 6x5FS |
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