Vishay

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SI5935CDC-T1-GE3

Manufacturer:

Vishay Siliconix

Description:

MOSFET 2P-CH 20V 4A 1206-8

Origin Data #:

9158454-SI5935CDC-T1-GE3

Customer:

RoHS Status:

RoHS Compliant

ECAD Model:

PCB Symbol, Footprint & 3D Model


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ERAIESDAS 9120BISO 9001ISO 13485ISO 14001ISO 22301ISO 28000ISO 37301

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Attributes

Technical Documents

TYPEDESCRIPTION
ManufacturerVishay Siliconix
SeriesTrenchFET®
Package / Case8-SMD, Flat Lead
Mounting TypeSurface Mount
Configuration2 P-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max3.1W
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4A
Input Capacitance (Ciss) (Max) @ Vds455pF @ 10V
Rds On (Max) @ Id, Vgs100mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs11nC @ 5V
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package1206-8 ChipFET™

Datasheet

SI5935CDC-T1-GE3 Datasheet (PDF)

Product Overview

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SI5935CDC-T1-GE3 - From Manufacturer: Vishay, it is an MOSFET 2P-CH 20V 4A 1206-8, part of Discrete Semiconductor Products, Transistors, FETs, MOSFETs, FET, MOSFET Arrays. . SI5935CDC-T1-GE3 stock status: In stock; order now! Ships immediately.

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Ships from: HK

Quantity
All prices are in USD
QTYUNIT PRICEEXT PRICE
1+$0.6592$0.6592
5+$0.6225$3.1125
10+$0.5859$5.8590
20+$0.5493$10.9860
30+$0.5127$15.3810
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