Vishay

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SI5504BDC-T1-GE3

Manufacturer:

Vishay Siliconix

Description:

MOSFET N/P-CH 30V 4A 1206-8

Origin Data #:

9153910-SI5504BDC-T1-GE3

Customer:

RoHS Status:

RoHS Compliant

ECAD Model:

PCB Symbol, Footprint & 3D Model


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ERAIESDAS 9120BISO 9001ISO 13485ISO 14001ISO 22301ISO 28000ISO 37301

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Attributes

Technical Documents

TYPEDESCRIPTION
ManufacturerVishay Siliconix
SeriesTrenchFET®
Package / Case8-SMD, Flat Lead
Mounting TypeSurface Mount
ConfigurationN and P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max3.12W, 3.1W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds220pF @ 15V
Rds On (Max) @ Id, Vgs65mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs7nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package1206-8 ChipFET™

Datasheet

SI5504BDC-T1-GE3 Datasheet (PDF)

Product Overview

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SI5504BDC-T1-GE3 - From Manufacturer: Vishay, it is an MOSFET N/P-CH 30V 4A 1206-8, part of Discrete Semiconductor Products, Transistors, FETs, MOSFETs, FET, MOSFET Arrays. . SI5504BDC-T1-GE3 stock status: In stock; order now! Ships immediately.

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30,000 Available

Can ship immediately

Ships from: HK

Quantity
All prices are in USD
QTYUNIT PRICEEXT PRICE
1+$1.2676$1.2676
5+$1.1972$5.9860
10+$1.1268$11.2680
20+$1.0563$21.1260
30+$0.9859$29.5770
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