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Manufacturer:
Vishay SiliconixDescription:
MOSFET 2N-CH 20V 2A 6-TSOP
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Attributes
Technical Documents
| TYPE | DESCRIPTION |
|---|---|
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2A |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 2.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
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SI3900DV-T1-E3 - From Manufacturer: Vishay, it is an MOSFET 2N-CH 20V 2A 6-TSOP, part of Discrete Semiconductor Products, Transistors, FETs, MOSFETs, FET, MOSFET Arrays. SI3900DV-T1-E3 stock status: In stock; order now! Ships immediately.
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