Vishay

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SI1988DH-T1-E3

Manufacturer:

Vishay Siliconix

Description:

MOSFET 2N-CH 20V 1.3A SC70-6

Origin Data #:

9155690-SI1988DH-T1-E3

Customer:

RoHS Status:

RoHS Compliant

ECAD Model:

PCB Symbol, Footprint & 3D Model


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ERAIESDAS 9120BISO 9001ISO 13485ISO 14001ISO 22301ISO 28000ISO 37301

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Attributes

Technical Documents

TYPEDESCRIPTION
ManufacturerVishay Siliconix
SeriesTrenchFET®
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.25W
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.3A
Input Capacitance (Ciss) (Max) @ Vds110pF @ 10V
Rds On (Max) @ Id, Vgs168mOhm @ 1.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs4.1nC @ 8V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageSC-70-6

Datasheet

SI1988DH-T1-E3 Datasheet (PDF)

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SI1988DH-T1-E3 - From Manufacturer: Vishay, it is an MOSFET 2N-CH 20V 1.3A SC70-6, part of Discrete Semiconductor Products, Transistors, FETs, MOSFETs, FET, MOSFET Arrays. SI1988DH-T1-E3 stock status: In stock; order now! Ships immediately.

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Quantity
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QTYUNIT PRICEEXT PRICE
1+$0.1014$0.1014
5+$0.0958$0.4790
10+$0.0901$0.9010
20+$0.0845$1.6900
30+$0.0789$2.3670
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