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Manufacturer:
GE AerospaceDescription:
1200V 1425A SiC Half-Bridge
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TYPE | DESCRIPTION |
---|---|
Manufacturer | GE Aerospace |
Series | SiC Power |
Package / Case | Module |
Mounting Type | Chassis Mount |
Operating Temperature | -55°C ~ 150°C (Tc) |
Power - Max | 3.75kW (Tc) |
FET Type | 2 N-Channel (Half Bridge) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 1.425kA (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 90000pF @ 600V |
Rds On (Max) @ Id, Vgs | 1.5mOhm @ 475A, 20V |
Gate Charge (Qg) (Max) @ Vgs | 3744nC @ 18V |
FET Feature | Silicon Carbide (SiC) |
Vgs(th) (Max) @ Id | 4.5V @ 480mA |
GE12160CEA3 - From Manufacturer: GE Aerospace, it is an 1200V 1425A SiC Half-Bridge, part of Discrete Semiconductor Products, Transistors, FETs, MOSFETs, FET, MOSFET Arrays. GE12160CEA3 stock status: need to confirm with us, contact us! Quick Reply.