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Manufacturer:
Diodes IncorporatedDescription:
MOSFET 2N-CHA 20V 14.5A DFN2030
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Attributes
Technical Documents
| TYPE | DESCRIPTION |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package / Case | 6-UFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 14.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 1418pF @ 10V |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 5.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 42.3nC @ 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250A |
| Supplier Device Package | U-DFN2030-6 (Type B) |
| Power - Max | 1W |
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DMN2008LFU-7 - From Manufacturer: Diodes Incorporated, it is an MOSFET 2N-CHA 20V 14.5A DFN2030, part of Discrete Semiconductor Products, Transistors, FETs, MOSFETs, FET, MOSFET Arrays. DMN2008LFU-7 stock status: In stock; order now! Ships immediately.
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