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Manufacturer:
Diodes IncorporatedDescription:
MOSFET N/P-CH 30V 26TSOT
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Attributes
Technical Documents
| TYPE | DESCRIPTION |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 850mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A, 2.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 422pF @ 15V |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 3.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12.3nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | TSOT-26 |
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DMG6601LVT-7 - From Manufacturer: Diodes Incorporated, it is an MOSFET N/P-CH 30V 26TSOT, part of Discrete Semiconductor Products, Transistors, FETs, MOSFETs, FET, MOSFET Arrays. . DMG6601LVT-7 stock status: In stock; order now! Ships immediately.
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