Diodes Incorporated

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DMG5802LFX-7

Manufacturer:

Diodes Incorporated

Description:

MOSFET 2N-CH 24V 6.5A 6DFN

Origin Data #:

9158099-DMG5802LFX-7

Customer:

RoHS Status:

RoHS Compliant

ECAD Model:

PCB Symbol, Footprint & 3D Model


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ERAIESDAS 9120BISO 9001ISO 13485ISO 14001ISO 22301ISO 28000ISO 37301

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Attributes

Technical Documents

TYPEDESCRIPTION
ManufacturerDiodes Incorporated
Package / Case6-VFDFN Exposed Pad
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual) Common Drain
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max980mW
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25°C6.5A
Input Capacitance (Ciss) (Max) @ Vds1066.4pF @ 15V
Rds On (Max) @ Id, Vgs15mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs31.3nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackageW-DFN5020-6

Datasheet

DMG5802LFX-7 Datasheet (PDF)

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DMG5802LFX-7 - From Manufacturer: Diodes Incorporated, it is an MOSFET 2N-CH 24V 6.5A 6DFN, part of Discrete Semiconductor Products, Transistors, FETs, MOSFETs, FET, MOSFET Arrays. DMG5802LFX-7 stock status: In stock; order now! Ships immediately.

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141,100 Available

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Ships from: HK

Quantity
All prices are in USD
QTYUNIT PRICEEXT PRICE
1+$0.4056$0.4056
5+$0.3831$1.9155
10+$0.3606$3.6060
20+$0.3380$6.7600
30+$0.3155$9.4650
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