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FQU13N06LTU-WS
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UMX18NTN
UMX18NTN
ROHM Semiconductor
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NTD4302T4G
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FDG6320C
onsemi
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2SC6026MFV-Y,L3F
2SC6026MFV-Y,L3F
Toshiba Semiconductor and Storage
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CCS15S30,L3F
CCS15S30,L3F
Toshiba Semiconductor and Storage
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2N7002-7-F
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Diodes Incorporated
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ATF-55143-TR1G
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BZX55C15-TAP
BZX55C15-TAP
Vishay General Semiconductor - Diodes Division
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SK54-3G
SK54-3G
Diotec Semiconductor
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IRLR2705TRLPBF
IRLR2705TRLPBF
Infineon Technologies
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IRLR2705TRPBF
IRLR2705TRPBF
International Rectifier
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IRLR2705TRPBF
IRLR2705TRPBF
Infineon Technologies
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FDMC8010DC
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SI7469DP-T1-E3
SI7469DP-T1-E3
Vishay / Siliconix
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IPW65R018CFD7XKSA1
IPW65R018CFD7XKSA1
Infineon Technologies
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BFR93AE6327HTSA1
BFR93AE6327HTSA1
Infineon Technologies
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SI2309CDS-T1-GE3
SI2309CDS-T1-GE3
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IRLR8726TRPBF
IRLR8726TRPBF
International Rectifier
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IRLR8726TRPBF
IRLR8726TRPBF
Infineon Technologies
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Newest Product Highlights

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Image of Sanken Schottky Diodes: Enhancing High-Speed Switching with Trench Structures

Sanken Schottky Diodes: Enhancing High-Speed Switching with Trench Structures

Sanken's SPET-21015 and SPET-21515 Schottky diodes feature trench structures for improved VF and IR characteristics, enhancing power supply efficiency in high-frequency systems like DC/DC converters and adapters.

Publish Date: 26 Jul, 2024
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Image of STMicroelectronics: STripFET F8 MOSFETs Enhance Automotive Applications

STMicroelectronics: STripFET F8 MOSFETs Enhance Automotive Applications

STMicroelectronics introduces the STL320N4LF8 and STL325N4LF8AG MOSFETs, employing STripFET F8 trench technology. These 40V devices reduce on-resistance and switching loss, enhancing energy efficiency and minimizing noise in power conversion and motor control circuits.

Publish Date: 26 Jul, 2024
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Image of EPC EPC2066: Revolutionizing Power Density with High-Frequency GaN FET

EPC EPC2066: Revolutionizing Power Density with High-Frequency GaN FET

EPC’s EPC2066 GaN FET introduces a paradigm shift in power density with its high-frequency operation, high efficiency, and ultra-small footprint, catering to space-constrained applications.

Publish Date: 26 Jul, 2024
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Image of STMicroelectronics SCR40A: Enhancing Efficiency in Automotive Inrush Current Limitation

STMicroelectronics SCR40A: Enhancing Efficiency in Automotive Inrush Current Limitation

STMicroelectronics introduces 40 A automotive SCR thyristors for high-efficiency inrush current limitation in EV onboard chargers, meeting AEC-Q101 standards. With low VT and a +150°C junction temperature, these thyristors excel in totem pole PFC or interleaved bridgeless PFC, boasting a surge blocking voltage of 1,400 V for compatibility with 3-phase AC input.

Publish Date: 26 Jul, 2024
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Image of UnitedSiC UF4C/SC Generation 4: Maximizing Design Flexibility and Cost-Effectiveness with SiC FETs

UnitedSiC UF4C/SC Generation 4: Maximizing Design Flexibility and Cost-Effectiveness with SiC FETs

UnitedSiC’s UF4C/SC Generation 4 SiC FET series offers various RDS(on) and package options, providing excellent performance for diverse applications. With features like a unique cascode configuration, these devices optimize power solutions for EV chargers, industrial applications, solar inverters, and more.

Publish Date: 27 Jul, 2024
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Image of Tech Innovations: Transphorm SuperGaN TP65H035G4WS

Tech Innovations: Transphorm SuperGaN TP65H035G4WS

Transphorm introduces the 650 V Gen IV SuperGaN device, TP65H035G4WS, in a TO-247 package. Offering a 35 mΩ on-resistance, it maximizes performance in bridgeless totem pole PFC topology, with 4 V threshold and ±20 V gate robustness.

Publish Date: 27 Jul, 2024
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Image of EPC EPC9171: Universal AC Input 15-48 VDC 5A Output USB PD3.1 Reference Design

EPC EPC9171: Universal AC Input 15-48 VDC 5A Output USB PD3.1 Reference Design

EPC's EPC9171 reference design offers a universal AC input voltage range, supporting USB PD3.1 systems in extended power range mode. With a maximum output power of 240W at 48V and 5A load current, it achieves high power density using GaN power switches.

Publish Date: 25 Jul, 2024
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Image of ROHM: RFL/RFS Series - Advancing Efficiency in EV Charging Stations

ROHM: RFL/RFS Series - Advancing Efficiency in EV Charging Stations

ROHM’s 4th Generation 650V fast-recovery diodes (FRDs) offer low forward voltage (VF), fast reverse recovery time (trr), and ultra-low noise characteristics. Ideal for EV charging stations and base station power supplies, they enhance electrical efficiency while minimizing noise in circuit design.

Publish Date: 27 Jul, 2024
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Image of Infineon Technologies: Low-Voltage N-Channel MOSFETs for Diverse Applications

Infineon Technologies: Low-Voltage N-Channel MOSFETs for Diverse Applications

Explore Infineon Technologies' diverse portfolio of low-voltage N-channel MOSFETs, available in various packages to meet design, pricing, and logistical needs, offering up to 300V for general applications.

Publish Date: 27 Jul, 2024
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Newest Application Notes

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The IXFH16N80P by Littelfuse is a high-performance, versatile power MOSFET designed for industrial applications. This article explores its features, advantages, functionality, and application areas, providing detailed insights and a comprehensive usage guide to help engineers maximize its potential.

Publish Date: 27 Jul, 2024
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Image of DF04S Diodes Inc: Comprehensive Guide and Analysis

DF04S Diodes Inc: Comprehensive Guide and Analysis

The DF04S bridge rectifier by Diodes Incorporated is a highly efficient, compact semiconductor device designed for AC to DC conversion. This article provides an in-depth overview of its features, performance, applications, and usage guidelines, making it a valuable resource for engineers and technicians.

Publish Date: 27 Jul, 2024
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Image of IRF150P220AKMA1 Infineon: A Comprehensive Guide to High-Performance Power MOSFET

IRF150P220AKMA1 Infineon: A Comprehensive Guide to High-Performance Power MOSFET

The IRF150P220AKMA1 is a power MOSFET manufactured by Infineon Technologies, designed for high-performance and reliable operation in various applications. It offers superior efficiency, thermal performance, and switching characteristics. This article provides an in-depth analysis of its features, advantages, functions, application areas, usage guide, and concludes with overall benefits.

Publish Date: 27 Jul, 2024
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Image of DMG2305UX-13: Article about DMG2305UX-13 by Diodes Incorporated

DMG2305UX-13: Article about DMG2305UX-13 by Diodes Incorporated

The DMG2305UX-13, manufactured by Diodes Incorporated, is a cutting-edge semiconductor device with exceptional features and advantages. This article provides a comprehensive overview of its functions, performance, application areas, and a practical usage guide.

Publish Date: 27 Jul, 2024
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Image of BZX84C24LT1G onsemi: Comprehensive Guide and Applications

BZX84C24LT1G onsemi: Comprehensive Guide and Applications

The BZX84C24LT1G by onsemi is a high-performance Zener diode renowned for its voltage regulation capabilities. This article delves into the product's overview, features, functions, and applications, providing a detailed guide on its usage and significance in various electronic circuits. Learn about the advantages of this component and its role in ensuring stability and efficiency in electrical systems.

Publish Date: 27 Jul, 2024
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Image of BCW68GLT1G onsemi: Comprehensive Analysis of a Versatile Transistor

BCW68GLT1G onsemi: Comprehensive Analysis of a Versatile Transistor

The BCW68GLT1G from onsemi is a high-performance transistor known for its excellent amplification and switching capabilities. This article provides a detailed overview, including features, performance, application areas, usage guidelines, and a conclusion, to help understand why the BCW68GLT1G is a preferred choice in various electronic applications.

Publish Date: 27 Jul, 2024
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The MCIMX6Q6AVT10ACR by NXP Semiconductors is a highly advanced semiconductor product with a wide range of applications and benefits. This article provides a detailed overview of its features, advantages, functions, performance, application areas, and usage guide.

Publish Date: 27 Jul, 2024
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Image of IRG4PH40UDPBF Infineon: Comprehensive Analysis of High-Power IGBT

IRG4PH40UDPBF Infineon: Comprehensive Analysis of High-Power IGBT

The IRG4PH40UDPBF by Infineon Technologies is a high-efficiency IGBT designed for optimal performance in various high-power applications. This article provides an in-depth overview, exploring its features, advantages, functions, and application areas, offering a detailed usage guide to maximize its benefits.

Publish Date: 27 Jul, 2024
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Image of FSBB20CH60C onsemi: Comprehensive Analysis of the Power Module

FSBB20CH60C onsemi: Comprehensive Analysis of the Power Module

The FSBB20CH60C by onsemi is a remarkable power module that offers exceptional performance and reliability for a wide range of applications. This article provides a detailed overview of its features, advantages, functions, performance, application areas, and usage guide.

Publish Date: 26 Jul, 2024
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