Single FETs, MOSFETs

Results:
45,196
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Drain to Source Voltage (Vdss)
Operating Temperature
Qualification
Power - Max
FET Feature
Technology
Configuration
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Voltage - Cutoff (VGS off) @ Id
Frequency - Transition
Current - Collector (Ic) (Max)
Grade
Current - Drain (Idss) @ Vds (Vgs=0)
FET Type
Current Rating (Amps)
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Voltage - Rated
Transistor Type
Current - Test
Gain
Power - Output
Input Type
Number of Outputs
Voltage - Test
Frequency
Voltage - Breakdown (V(BR)GSS)
Cable Opening
Voltage Rating
Shell Size, MIL
Resistance - RDS(On)
Gate Type
Material Flammability Rating
Current - Output (Max)
Voltage - Supply
Channel Type
High Side Voltage - Max (Bootstrap)
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Operating Temperature - Junction
Logic Voltage - VIL, VIH
Driven Configuration
Capacitance @ Vr, F
Color
Shielding
Voltage - Load
Orientation
Current - Peak Output (Source, Sink)
Current - Reverse Leakage @ Vr
Shell Material
Rise / Fall Time (Typ)
Reverse Recovery Time (trr)
Ingress Protection
Output Type
Current Drain (Id) - Max
Output Configuration
Shell Finish
Shell Size - Insert
Voltage - Output
Connector Type
Features
Noise Figure
Voltage - Supply (Vcc/Vdd)
Voltage - Input
Primary Material
Contact Finish - Mating
Speed
Number of Positions
Applications
Ratio - Input
Switch Type
Number of Drivers
Termination
Fastening Type
Rds On (Typ)
Mounting Feature
Fault Protection
Voltage - Forward (Vf) (Max) @ If
Interface
Results remaining45,196
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeDrain to Source Voltage (Vdss)Package / CaseGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
CSD15380F3
MOSFET N-CH 20V 500MA 3PICOSTAR
1+
$0.0761
5+
$0.0718
10+
$0.0676
Quantity
421,079 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
20 V
3-XFDFN
-
MOSFET (Metal Oxide)
-
500mA (Ta)
FemtoFET™
2.8V, 8V
1190mOhm @ 100mA, 8V
1.35V @ 2.5µA
0.281 nC @ 10 V
10V
10.5 pF @ 10 V
500mW (Ta)
3-PICOSTAR
-
RK7002BMT116
MOSFET N-CH 60V 250MA SST3
1+
$0.0190
5+
$0.0180
10+
$0.0169
Quantity
420,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
N-Channel
60 V
TO-236-3, SC-59, SOT-23-3
-
MOSFET (Metal Oxide)
-
250mA (Ta)
-
2.5V, 10V
2.4Ohm @ 250mA, 10V
2.3V @ 1mA
-
±20V
15 pF @ 25 V
200mW (Ta)
SST3
-
NDS7002A
MOSFET N-CH 60V 280MA SOT-23
1+
$0.0963
5+
$0.0910
10+
$0.0856
Quantity
415,875 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 150°C (TJ)
N-Channel
60 V
TO-236-3, SC-59, SOT-23-3
-
MOSFET (Metal Oxide)
-
280mA (Ta)
-
5V, 10V
2Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
300mW (Ta)
SOT-23-3
-
AO3400A
MOSFET N-CH 30V 5.7A SOT23-3L
1+
$0.0558
5+
$0.0527
10+
$0.0496
Quantity
414,924 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
3-SMD, SOT-23-3 Variant
-
MOSFET (Metal Oxide)
-
5.7A (Ta)
-
2.5V, 10V
26.5mOhm @ 5.7A, 10V
1.5V @ 250µA
7 nC @ 4.5 V
±12V
630 pF @ 15 V
1.4W (Ta)
SOT-23-3
-
FDV304P
SMALL SIGNAL FIELD-EFFECT TRANSI
1+
$0.0507
5+
$0.0479
10+
$0.0451
Quantity
414,844 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
25 V
TO-236-3, SC-59, SOT-23-3
MOSFET (Metal Oxide)
-
460mA (Ta)
-
2.7V, 4.5V
1.1Ohm @ 500mA, 4.5V
1.5V @ 250µA
1.5 nC @ 4.5 V
±8V
63 pF @ 10 V
350mW (Ta)
SOT-23-3
FDV304P
MOSFET P-CH 25V 460MA SOT23
1+
$0.0507
5+
$0.0479
10+
$0.0451
Quantity
414,844 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
25 V
TO-236-3, SC-59, SOT-23-3
-
MOSFET (Metal Oxide)
-
460mA (Ta)
-
2.7V, 4.5V
1.1Ohm @ 500mA, 4.5V
1.5V @ 250µA
1.5 nC @ 4.5 V
±8V
63 pF @ 10 V
350mW (Ta)
SOT-23-3
-
NDS0610
MOSFET P-CH 60V 120MA SOT-23
1+
$0.0545
5+
$0.0515
10+
$0.0485
Quantity
407,690 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
60 V
TO-236-3, SC-59, SOT-23-3
-
MOSFET (Metal Oxide)
-
120mA (Ta)
-
4.5V, 10V
10Ohm @ 500mA, 10V
3.5V @ 1mA
2.5 nC @ 10 V
±20V
79 pF @ 25 V
360mW (Ta)
SOT-23-3
-
DMN6140L-7
MOSFET N-CH 60V 1.6A SOT-23
1+
$0.0507
5+
$0.0479
10+
$0.0451
Quantity
405,764 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
60 V
TO-236-3, SC-59, SOT-23-3
-
MOSFET (Metal Oxide)
-
1.6A (Ta)
-
4.5V, 10V
140mOhm @ 1.8A, 10V
3V @ 250µA
8.6 nC @ 10 V
±20V
315 pF @ 40 V
700mW (Ta)
SOT-23-3
-
STB15810
N-channel 800 V, 0.300 Ohm typ.,
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
400,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
100 V
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
MOSFET (Metal Oxide)
-
110A (Tc)
-
10V
3.9mOhm @ 55A, 10V
4.5V @ 250µA
117 nC @ 10 V
±20V
8115 pF @ 50 V
250W (Tc)
D2PAK
-
IRFR9214TRPBF
MOSFET P-CH 250V 2.7A DPAK
1+
$0.2028
5+
$0.1915
10+
$0.1803
Quantity
398,561 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
250 V
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
-
2.7A (Tc)
-
10V
3Ohm @ 1.7A, 10V
4V @ 250µA
14 nC @ 10 V
±20V
220 pF @ 25 V
50W (Tc)
DPAK
-
NTMFS4C022NT1G
MOSFET N-CH 30V 30A/136A 5DFN
1+
$0.4310
5+
$0.4070
10+
$0.3831
Quantity
396,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
8-PowerTDFN, 5 Leads
-
MOSFET (Metal Oxide)
-
30A (Ta), 136A (Tc)
-
4.5V, 10V
1.7mOhm @ 30A, 10V
2.2V @ 250µA
45.2 nC @ 10 V
±20V
3071 pF @ 15 V
3.1W (Ta), 64W (Tc)
5-DFN (5x6) (8-SOFL)
-
NDS331N
MOSFET N-CH 20V 1.3A SUPERSOT3
1+
$0.1775
5+
$0.1676
10+
$0.1577
Quantity
393,857 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
20 V
TO-236-3, SC-59, SOT-23-3
-
MOSFET (Metal Oxide)
-
1.3A (Ta)
-
2.7V, 4.5V
160mOhm @ 1.5A, 4.5V
1V @ 250µA
5 nC @ 4.5 V
±8V
162 pF @ 10 V
500mW (Ta)
SOT-23-3
-
IPB048N06LG
N-CHANNEL POWER MOSFET
1+
$0.5831
5+
$0.5507
10+
$0.5183
Quantity
390,888 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
60 V
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
-
100A (Tc)
4.5V, 10V
4.7mOhm @ 100A, 10V
2V @ 270µA
225 nC @ 10 V
±20V
7600 pF @ 30 V
300W (Tc)
PG-TO-263-3-2
DMP610DL-7
MOSFET BVDSS: 41V 60V SOT23 T&R
1+
$0.0254
5+
$0.0239
10+
$0.0225
Quantity
390,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
60 V
TO-236-3, SC-59, SOT-23-3
-
MOSFET (Metal Oxide)
-
180mA (Ta)
-
5V
10Ohm @ 100mA, 5V
2V @ 1mA
0.56 nC @ 10 V
±30V
24.6 pF @ 25 V
310mW (Ta)
SOT-23-3
-
PMF63UNEX
MOSFET N-CH 20V 2.2A SOT323
1+
$0.1521
5+
$0.1437
10+
$0.1352
Quantity
370,121 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
20 V
SC-70, SOT-323
-
MOSFET (Metal Oxide)
-
2.2A (Ta)
-
1.8V, 4.5V
65mOhm @ 2A, 4.5V
1V @ 250µA
5.85 nC @ 4.5 V
±8V
289 pF @ 10 V
395mW (Ta)
SOT-323
-
DMG6968U-7
MOSFET N-CH 20V 6.5A SOT23-3
1+
$0.0634
5+
$0.0599
10+
$0.0563
Quantity
369,548 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
20 V
TO-236-3, SC-59, SOT-23-3
-
MOSFET (Metal Oxide)
-
6.5A (Ta)
-
1.8V, 4.5V
25mOhm @ 6.5A, 4.5V
900mV @ 250µA
8.5 nC @ 4.5 V
±12V
151 pF @ 10 V
1.3W (Ta)
SOT-23-3
-
SQ2309ES-T1_GE3
MOSFET P-CH 60V 1.7A TO236
1+
$0.2028
5+
$0.1915
10+
$0.1803
Quantity
362,596 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
P-Channel
60 V
TO-236-3, SC-59, SOT-23-3
Automotive
MOSFET (Metal Oxide)
-
1.7A (Tc)
TrenchFET®
4.5V, 10V
336mOhm @ 3.8A, 10V
2.5V @ 250µA
8.5 nC @ 10 V
±20V
265 pF @ 25 V
2W (Tc)
SOT-23-3 (TO-236)
AEC-Q101
BSS169H6327XTSA1
MOSFET N-CH 100V 170MA SOT23-3
1+
$0.1775
5+
$0.1676
10+
$0.1577
Quantity
360,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
100 V
TO-236-3, SC-59, SOT-23-3
-
MOSFET (Metal Oxide)
Depletion Mode
170mA (Ta)
SIPMOS®
0V, 10V
6Ohm @ 170mA, 10V
1.8V @ 50µA
2.8 nC @ 7 V
±20V
68 pF @ 25 V
360mW (Ta)
PG-SOT23
-
STD5NK40Z-1
MOSFET N-CH 400V 3A IPAK
1+
$0.6845
5+
$0.6465
10+
$0.6085
Quantity
356,330 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
400 V
TO-251-3 Short Leads, IPak, TO-251AA
-
MOSFET (Metal Oxide)
-
3A (Tc)
SuperMESH™
10V
1.8Ohm @ 1.5A, 10V
4.5V @ 50µA
17 nC @ 10 V
±30V
305 pF @ 25 V
45W (Tc)
TO-251 (IPAK)
-
CPH3351-TL-W
MOSFET P-CH 60V 1.8A 3CPH
1+
$0.4563
5+
$0.4310
10+
$0.4056
Quantity
353,898 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
P-Channel
60 V
TO-236-3, SC-59, SOT-23-3
-
MOSFET (Metal Oxide)
-
1.8A (Ta)
-
4V, 10V
250mOhm @ 1A, 10V
2.6V @ 1mA
6 nC @ 10 V
±20V
262 pF @ 20 V
1W (Ta)
3-CPH
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.