Depletion Series, Single FETs, MOSFETs

Results:
62
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Mounting Type
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Technology
Vgs (Max)
FET Feature
Grade
Qualification
Results remaining62
Applied Filters:
Depletion
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageGradeTechnologyFET FeatureSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXTA1R6N100D2HV
MOSFET N-CH 1000V 1.6A TO263HV
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
200 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263HV
-
MOSFET (Metal Oxide)
Depletion Mode
Depletion
1000 V
1.6A (Tj)
0V
10Ohm @ 800mA, 0V
4.5V @ 100µA
27 nC @ 5 V
±20V
645 pF @ 10 V
100W (Tc)
-
IXTY1R6N50D2-TRL
MOSFET N-CH 500V 1.6A TO252AA
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
-
MOSFET (Metal Oxide)
Depletion Mode
Depletion
500 V
1.6A (Tj)
0V
2.3Ohm @ 800mA, 0V
4.5V @ 250µA
23.7 nC @ 5 V
±20V
645 pF @ 25 V
100W (Tc)
-
IXTY01N100D-TRL
MOSFET N-CH 1000V 400MA TO252AA
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
-
MOSFET (Metal Oxide)
Depletion Mode
Depletion
1000 V
400mA (Tc)
0V
80Ohm @ 50mA, 0V
4.5V @ 25µA
5.8 nC @ 5 V
±20V
100 pF @ 25 V
1.1W (Ta), 25W (Tc)
-
IXTY1R6N100D2
MOSFET N-CH 1000V 1.6A TO252
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
-
MOSFET (Metal Oxide)
Depletion Mode
Depletion
1000 V
1.6A (Tc)
-
10Ohm @ 800mA, 0V
-
27 nC @ 5 V
±20V
645 pF @ 25 V
100W (Tc)
-
IXTY01N100D
MOSFET N-CH 1000V 400MA TO252AA
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
-
MOSFET (Metal Oxide)
Depletion Mode
Depletion
1000 V
400mA (Tc)
0V
80Ohm @ 50mA, 0V
4.5V @ 25µA
5.8 nC @ 5 V
±20V
100 pF @ 25 V
1.1W (Ta), 25W (Tc)
-
IXTA08N100D2
MOSFET N-CH 1000V 800MA TO263
1+
$2.0282
5+
$1.9155
10+
$1.8028
Quantity
870 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
-
MOSFET (Metal Oxide)
Depletion Mode
Depletion
1000 V
800mA (Tc)
-
21Ohm @ 400mA, 0V
-
14.6 nC @ 5 V
±20V
325 pF @ 25 V
60W (Tc)
-
IXTT16N20D2
MOSFET N-CH 200V 16A TO268
1+
$63.3803
5+
$59.8592
10+
$56.3380
Quantity
4 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
-
MOSFET (Metal Oxide)
Depletion Mode
Depletion
200 V
16A (Tc)
-
73mOhm @ 8A, 0V
-
208 nC @ 5 V
±20V
5500 pF @ 25 V
695W (Tc)
-
IXTT16N10D2
MOSFET N-CH 100V 16A TO268
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Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
-
MOSFET (Metal Oxide)
Depletion Mode
Depletion
100 V
16A (Tc)
0V
64mOhm @ 8A, 0V
-
225 nC @ 5 V
±20V
5700 pF @ 25 V
830W (Tc)
-
IXTH16N20D2
MOSFET N-CH 200V 16A TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
-
MOSFET (Metal Oxide)
Depletion Mode
Depletion
200 V
16A (Tc)
-
73mOhm @ 8A, 0V
-
208 nC @ 5 V
±20V
5500 pF @ 25 V
695W (Tc)
-
IXTY08N50D2
MOSFET N-CH 500V 800MA TO252
1+
$2.5352
5+
$2.3944
10+
$2.2535
Quantity
144,468 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
-
MOSFET (Metal Oxide)
Depletion Mode
Depletion
500 V
800mA (Tc)
-
4.6Ohm @ 400mA, 0V
-
12.7 nC @ 5 V
±20V
312 pF @ 25 V
60W (Tc)
-
IXTP08N50D2
MOSFET N-CH 500V 800MA TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
-
MOSFET (Metal Oxide)
Depletion Mode
Depletion
500 V
800mA (Tc)
-
4.6Ohm @ 400mA, 0V
-
12.7 nC @ 5 V
±20V
312 pF @ 25 V
60W (Tc)
-
IXTA3N50D2
MOSFET N-CH 500V 3A TO263
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
-
MOSFET (Metal Oxide)
Depletion Mode
Depletion
500 V
3A (Tc)
-
1.5Ohm @ 1.5A, 0V
-
40 nC @ 5 V
±20V
1070 pF @ 25 V
125W (Tc)
-
IXTA6N50D2-TRL
MOSFET N-CH 500V 6A TO263
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-
MOSFET (Metal Oxide)
Depletion Mode
Depletion
500 V
6A (Tj)
0V
500mOhm @ 3A, 0V
4.5V @ 250µA
96 nC @ 5 V
±20V
2800 pF @ 25 V
300W (Tc)
-
IXTA3N100D2HV
MOSFET N-CH 1000V 3A TO263HV
1+
$12.6761
5+
$11.9718
10+
$11.2676
Quantity
277 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263HV
-
MOSFET (Metal Oxide)
Depletion Mode
Depletion
1000 V
3A (Tj)
0V
6Ohm @ 1.5A, 0V
4.5V @ 250µA
37.5 nC @ 5 V
±20V
1020 pF @ 25 V
125W (Tc)
-
IXTP01N100D
MOSFET N-CH 1000V 400MA TO220AB
1+
$2.5352
5+
$2.3944
10+
$2.2535
Quantity
600 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
-
MOSFET (Metal Oxide)
Depletion Mode
Depletion
1000 V
400mA (Tc)
0V
80Ohm @ 50mA, 0V
4.5V @ 25µA
5.8 nC @ 5 V
±20V
100 pF @ 25 V
1.1W (Ta), 25W (Tc)
-
IXTP08N100D2
MOSFET N-CH 1000V 800MA TO220AB
1+
$25.3521
5+
$23.9437
10+
$22.5352
Quantity
25 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
-
MOSFET (Metal Oxide)
Depletion Mode
Depletion
1000 V
800mA (Tc)
-
21Ohm @ 400mA, 0V
-
14.6 nC @ 5 V
±20V
325 pF @ 25 V
60W (Tc)
-
IXTY08N100D2
MOSFET N-CH 1000V 800MA TO252
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
-
MOSFET (Metal Oxide)
Depletion Mode
Depletion
1000 V
800mA (Tc)
-
21Ohm @ 400mA, 0V
-
14.6 nC @ 5 V
±20V
325 pF @ 25 V
60W (Tc)
-
IXTY08N50D2-TRL
MOSFET N-CH 500V 800MA TO252AA
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
32,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
-
MOSFET (Metal Oxide)
Depletion Mode
Depletion
500 V
800mA (Tj)
0V
4.6Ohm @ 400mA, 0V
4.5V @ 25µA
12.7 nC @ 5 V
±20V
312 pF @ 25 V
60W (Tc)
-
IXTP3N50D2
MOSFET N-CH 500V 3A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
-
MOSFET (Metal Oxide)
Depletion Mode
Depletion
500 V
3A (Tc)
-
1.5Ohm @ 1.5A, 0V
-
40 nC @ 5 V
±20V
1070 pF @ 25 V
125W (Tc)
-
IXTH6N100D2
MOSFET N-CH 1000V 6A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
-
MOSFET (Metal Oxide)
Depletion Mode
Depletion
1000 V
6A (Tc)
-
2.2Ohm @ 3A, 0V
-
95 nC @ 5 V
±20V
2650 pF @ 25 V
300W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.